IXTF250N075T
ISOPLUSi4-PakTM (5-Lead)
(IXTF)Outline
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min.
Typ.
Max.
VDS= 10 V; ID = 60 A, Note 1
75
122
S
Ciss
Coss
Crss
9900
1330
285
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
32
50
58
45
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 50 A
RG = 3.3 W (External)
Qg(on)
Qgs
200
50
nC
nC
nC
VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A
Qgd
60
RthJC
RthCH
0.75 °C/W
°C/W
0.15
Source-Drain Diode
Characteristic Values
TJ = 25°C unless otherwise specified)
Symbol
IS
TestConditions
Min.
Typ.
Max.
VGS = 0 V
150
A
A
ISM
VSD
trr
Pulse width limited by TJM
IF = 50 A, VGS = 0 V, Note 1
560
1.0
V
Leads:
1. Gate;
2, 3.
Source;
4, 5. Drain
6. Isolated.
IF = 25 A, -di/dt = 100 A/μs
50
ns
VR = 25 V, VGS = 0 V
Notes: 1. Pulse test: t ≤ 300 μs, duty cycled ≤ 2 %;
2. Drain and Source Kelvin contacts must be located less than 5 mm
from the plastic body.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered
are derived from a subjective evaluation of the design, based upon prior knowledge and
experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves
the right to change limits, test conditions, and dimensions without notice.
All leads and tab are tin plated.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered by
oneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728 B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478B2
7,005,734B2
7,063,975B2
7,071,537
