IXTP 2R4N50P
IXTY 2R4N50P
Symbol
gfs
Test Conditions
Characteristic Values
TO-220 (IXTP) Outline
(TJ = 25°C unless otherwise specified)
Min.
Typ.
Max.
VDS= 20 V; ID = 0.5 ID25, Note 1
VGS = 0 V, VDS = 25 V, f = 1 MHz
1.0
2.2
S
Ciss
Coss
Crss
240
31
4
pF
pF
pF
td(on)
tr
td(off)
tf
14
20
45
18
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25
RG = 50 Ω (External)
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
Qg(on)
Qgs
6.1
1.8
2.9
nC
nC
nC
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
RthJC
RthCH
2.25 K/W
KW
(TO-220)
0.25
Source-Drain Diode
Characteristic Values
TJ = 25°C unless otherwise specified)
Symbol
IS
Test Conditions
Min.
Typ.
Max.
VGS = 0 V
2.4
A
A
ISM
VSD
trr
Repetitive
9.6
1.5
IF = IS, VGS = 0 V, Note 1
V
TO-252 AA Outline
IF = 2.4 A, -di/dt = 100 A/μs
400
ns
VR = 100 V; VGS = 0 V
Note 1: Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
Pins: 1 - Gate
2, 4 - Drain
3 - Source
Dim. Millimeter
Min. Max.
Inches
Min.
Max.
A
A1
2.19 2.38
0.89 1.14
0.086
0.035
0.094
0.045
A2
b
0
0.13
0
0.005
0.035
0.64 0.89
0.025
b1
b2
0.76 1.14
5.21 5.46
0.030
0.205
0.045
0.215
c
c1
0.46 0.58
0.46 0.58
0.018
0.018
0.023
0.023
D
D1
5.97 6.22
4.32 5.21
0.235
0.170
0.245
0.205
E
E1
6.35 6.73
4.32 5.21
0.250
0.170
0.265
0.205
e
e1
2.28 BSC
4.57 BSC
0.090 BSC
0.180 BSC
H
L
9.40 10.42
0.51 1.02
0.370
0.020
0.410
0.040
L1
L2
L3
0.64 1.02
0.89 1.27
2.54 2.92
0.025
0.035
0.100
0.040
0.050
0.115
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,727,585
6,534,343
6,583,505
6,710,405B2 6,759,692
6,710,463 6771478 B2
