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NX9415CM

型号：

NX9415CM

品牌：

MICROSEMI[ Microsemi ]

页数：

17 页

PDF大小：

260 K

下载PDF手册
NX9415  
5A Constant Frequency Hysteretic  
Synchronous Regulator  
Description  
Features  
The NX9415 is synchronous buck switching  
converter in a multi chip module designed for step-  
down DC to DC converter applications. It is  
optimized to convert bus voltages from 8V to 22V to  
as low as 0.8V output voltage. The output current  
can be up to 5A. An internal regulator converts bus  
voltage to 5V, which provides a voltage supply to the  
. Single Supply Voltage From 8V to 22V  
. Internal 5V Regulator  
. Programmable Frequency Up to 2.2MHz  
. Internal Digital Soft Start Function  
. Internal Boost Schottky Diode  
. Prebias Startup  
internal logic and driver circuits.  
The NX9415  
. Less than 50 nS Adaptive Deadband  
. Current Limit Triggers Hiccup by Sensing  
operates from 200 kHz to 2.2MHz and employs loss-  
less current limiting by sensing the RDSON of  
synchronous MOSFET followed by hiccup feature.  
Feedback under voltage protection triggers hiccup.  
RDSON of Synchronous MOSFET  
. Pb-free and RoHS Compliant  
Other features of the device are: internal Schottky  
diode, thermal shutdown, 5V gate drive, adaptive  
deadband control, internal digital soft start, 5VREG  
under-voltage lock out and shutdown capability via  
the comp pin. NX9415 is available in 4x4 MCM  
package.  
Applications  
. Low Profile On board DC to DC Application  
. LCD TV  
. Hard Disk Drive  
. ADSL Modem  
0.1µF  
VIN  
D1  
VIN  
+12V  
BST  
2*(10µF/16V/X5R)  
0.1µF  
0.56µH  
S1  
D2  
SW  
VOUT1  
+5V,5A  
5VREG  
22µF/6.3V/X5R  
4.7µF  
10  
5k  
768  
OCP  
15.8k  
3.01k  
VCC  
220pf  
NX9415  
1µF  
FB  
330pf  
15k  
10pf  
4.22k  
COMP  
RT  
GND  
S2  
Figure 1 · Typical Application of NX9415  
November 2013 Rev. 1.3  
www.microsemi.com  
1
© 2013 Microsemi Corporation  
5A Constant Frequency Hysteretic Synchronous Regulator  
Pin Configuration and Pinout  
24-LEAD PLASTIC MCM 4x4  
24  
22  
21  
20  
19  
23  
1
2
3
S2  
D2  
S1  
18  
PAD2  
PAD1  
17  
16  
S1  
D1  
D2  
NC  
4
5
6
15  
NC  
VCC  
PAD3  
OCP  
BST  
14  
13  
5VREG  
12  
11  
8
9
10  
7
Figure 2 · Pinout  
Ordering Information  
Ambient  
Type  
Package  
Part Number  
Packaging Type  
Temperature  
NX9415CM  
Bulk / Tube  
RoHS Compliant  
0°C to 70°C  
Pb-free  
4X4 MCM-24L  
NX9415CMTR  
Tape and Reel  
2
Pin Description  
Pin Description  
Pin Number  
Pin Designator  
Description  
Source of low side MOSFET and needs to be connected to power  
ground.  
1, 23-24  
S2  
2-3,22, PAD2  
D2  
Drain of low side MOSFET.  
4, 12, 15, PAD3  
NC  
Not used pin. Connecting these pins to ground is recommended.  
5
6
VCC  
Voltage supply for internal analog circuit and driver  
An internal 5V regulator. A high frequency 4.7µF/X5R ceramic capacitor  
must be connected from this pin to the GND pin as close as possible.  
5VREG  
7
8
9
VIN  
RT  
Voltage supply for the internal 5V regulator.  
Oscillator's frequency can be set by using an external resistor from this  
pin to GND.  
GND  
Ground.  
This pin is the output of the error amplifier and is used to compensate the  
voltage control feedback loop. This pin is also used as a shut down pin.  
When this pin is pulled below 0.3V, both drivers are turned off and  
internal soft start is reset.  
10  
COMP  
This pin is the error amplifier inverting input. This pin is connected via  
resistor divider to the output of the switching regulator to set the output  
DC voltage.  
11  
13  
FB  
This pin supplies voltage to the high side driver. A high frequency  
ceramic capacitor of 0.1 to 1µF must be connected from this pin to SW  
pin.  
BST  
This pin is connected to the D2 of the low side MOSFET and is the input  
of the over current protection (OCP) comparator. A fixed internal current  
flows to the external resistor which sets the OCP voltage across the  
RDSON of the low side MOSFET. Current limit point is this voltage divided  
14  
OCP  
by the RDSON  
.
16, 21-20, PAD1  
17-19  
D1  
S1  
Drain of high side MOSFET  
Source of high side MOSFET and provides return path for the high side  
driver.  
3
5A Constant Frequency Hysteretic Synchronous Regulator  
Block Diagram  
5VREG  
5V LDO  
0.8V(REF)  
Bias Generator  
1.25V  
VIN  
BST  
VCC  
RT  
VCC UVLO  
OSC  
D1  
Ramp  
Set  
S1  
Gate  
Control  
Logic  
SW  
D2  
Soft start  
PWM Logic  
+
S2  
FB  
-
Thermal  
Shutdown  
COMP  
+
0.3V  
GND  
+
0.56V  
FB  
OCP  
OCP  
HICCUP  
Figure 3 · Simplified Block Diagram of NX9415  
4
Absolute Maximum Ratings  
Absolute Maximum Ratings  
Note: Stresses above those listed in “ABSOLUTE MAXIMUM RATINGS”, may cause permanent  
damage to the device. This is a stress only rating and operation of the device at these or any  
other conditions above those indicated in the operational sections of this specification is not  
implied.  
Min  
-0.3  
-
Max  
Units  
V
Parameter  
5VREG,VCC to GND & BST to SW voltage  
VIN to GND Voltage  
6.5  
25  
V
S1 to GND  
-2  
30  
V
D1 to S1, D2 to S2  
-
30  
V
All other pins  
-0.3  
-65  
-40  
VCC+0.3, or 6.5  
V
Storage Temperature Range  
Operating Junction Temperature Range  
Peak Reflow Temperature (40 seconds)  
ESD Susceptibility  
150  
°C  
°C  
°C  
kV  
125  
260 (+0, -5)  
2
Power Dissipation  
Internally Limited by OTP  
Thermal Properties  
Thermal Resistance  
Typ  
30  
Units  
θJA  
θJC  
°C/W  
°C/W  
2.5  
Note: The θJA numbers assume no forced airflow. Junction Temperature is calculated using TJ = TA + (PD x θJA). In  
particular, θJA is a function of the PCB construction. The stated number above is for a four-layer board in  
accordance with JESD-51 (JEDEC).  
Electrical Characteristics  
Unless otherwise specified, these specifications apply over VIN = 12V, and TA = 0 to 70°C.  
Following are the bypass capacitors: CVIN = 1µF, C5VREG = 4.7µF, and all X5R ceramic capacitors.  
Typical values refer to TA = 25°C. Low duty cycle pulse testing is used which keeps junction and  
case temperatures equal to the ambient temperature.  
Symbol  
Parameter  
Test Condition  
Min  
Typ  
Max  
Units  
Reference Voltage  
VREF  
Ref Voltage  
0.8  
0.4  
V
Ref Voltage line regulation VIN= 9V to 22V  
%
5VREG  
5VREG Voltage range  
4.75  
5
5.25  
V
5VREG Line Regulation  
5VREG Max Current  
VIN= 9V to 22V  
10  
50  
mV  
mA  
5
5A Constant Frequency Hysteretic Synchronous Regulator  
Electrical Characteristics - continued  
Unless otherwise specified, these specifications apply over VIN = 12V, and TA = 0 to 70°C.  
Following are the bypass capacitors: CVIN = 1µF, C5VREG = 4.7µF, and all X5R ceramic capacitors.  
Typical values refer to TA = 25°C. Low duty cycle pulse testing is used which keeps junction and  
case temperatures equal to the ambient temperature.  
Symbol  
Parameter  
Test Condition  
Min  
Typ  
Max  
Units  
Supply Voltage (VIN)  
VIN  
VIN Voltage Range  
9
22  
V
Input Voltage Current  
(Static)  
No switching  
4.8  
10  
mA  
Input Voltage Current  
(Dynamic)  
RRT= 4.22kΩ  
mA  
VIN UVLO  
VIN_UVLO VIN-Threshold  
VIN_Hyst VIN-Hysteresis  
VIN Rising  
VIN Falling  
6.5  
0.6  
V
V
Under Voltage Lockout  
VCC_UVLO VCC Threshold  
VCC Rising  
VCC Falling  
3.9  
0.2  
V
V
VCC_Hyst  
SS  
VCC Hysteresis  
Tss  
Soft Start time  
FS= 2.2MHz  
400  
µs  
Oscillator (RT)  
FS  
Frequency  
RRT = 4.22kΩ  
2250  
kHz  
VRAMP  
Ramp Amplitude Voltage  
1.5  
71  
V
%
ns  
Max Duty Cycle  
FS= 2.2MHz  
Min Controllable On Time  
150  
Error Amplifiers  
Transconductance  
2000  
10  
µmho  
nA  
IB  
Input Bias Current  
COMP SD Threshold  
0.3  
V
FBUVLO  
Feedback UVLO threshold  
0.6  
150  
20  
V
Over temperature  
Threshold  
°C  
°C  
Hysteresis  
OCP  
OCP current  
37  
µA  
Internal Schottky Diode  
Forward voltage drop  
Output Stage  
High Side MOSFET  
Forward current = 20mA  
350  
mV  
31  
31  
mΩ  
RDSON  
Low Side MOSFET  
RDSON  
mΩ  
Output Current  
5
A
6
Typical Application  
Typical Application  
• Input Voltage = 12V, Output Voltage ~ 5V@ 5A, Working Frequency ~ 2.2MHz  
C2  
0.1µF  
U1  
VIN  
D1  
BST  
+12V  
VIN  
CIN  
C3  
0.1µF  
L1  
0.56µH  
2*(10µF/16V/X5R)  
S1  
D2  
SW  
VOUT1  
+5V, 5A  
5VREG  
C4  
4.7µF  
COUT  
R7  
5k  
22µF/6.3V/X5R  
R1  
10  
R4  
768  
OCP  
R5  
15.8k  
VCC  
C1  
1µF  
C5  
220pf  
NX9415  
FB  
C6  
330pf  
R6  
3.01k  
10pf  
R3  
15k  
R2 4.22k  
RT  
COMP  
S2  
GND  
Figure 4 · Demo Board Schematic  
Bill of Materials  
Item  
Quantity  
Reference  
Value  
1µF  
Manufacturer  
1
1
2
1
1
1
2
1
1
1
1
1
1
1
1
1
1
C1  
C2,C3  
C4  
2
0.1µF  
3
4.7µF/6.3V/X5R  
220pf  
4
C5  
5
C6  
330pf  
6
CIN  
COUT  
L1  
10µF/16V/X5R  
22µF/6.3V/X5R  
DO1813P-561HC  
10Ω  
7
8
Coilcraft  
9
R1  
10  
11  
12  
13  
14  
15  
16  
R2  
4.22kΩ  
R3  
15kΩ  
R4  
768Ω  
R5  
15.8kΩ  
R6  
3.01kΩ  
R7  
5kΩ  
U1  
NX9415CM  
Microsemi  
7
5A Constant Frequency Hysteretic Synchronous Regulator  
Theory of Operation  
Over Current Protection  
Over current protection is achieved by sensing current through the low side MOSFET. A typical  
internal current source of 37µA flowing through an external resistor connected from OCP pin to SW  
node sets the over current protection threshold. When synchronous FET is on, the voltage at node  
SW is given as  
푉
푆푊  
= −퐼퐿 × 푅퐷푆푂푁  
The voltage at pin OCP is given as  
퐼푂퐶푃푆푊 × 푅푂퐶푃 + 푉  
푆푊  
When the voltage is below zero, the over-current occurs.  
VBUS  
IOCP  
OCP  
SW  
R
OCP  
OCP  
Comparator  
Figure 5 · Over Current Protection  
The over current limit can be set by the following equation:  
퐼푂퐶푃 × 푅푂퐶푃  
퐾 × 푅퐷푆푂푁  
퐼푆퐸푇  
=
K is temperature coefficient of RDSON, the recommended value is 1.4.  
8
Demoboard Waveforms  
Demoboard Waveforms  
Figure 6 · Output Ripple (CH1 SW 10V/DIV, CH2 VOUT AC 50mV/DIV, CH4 OUTPUT CURRENT 5A/DIV)  
Figure 7 · Output Voltage Transient Response ( CH2 VOUT AC 50mV/DIV, CH4 OUTPUT CURRENT 5A/DIV)  
9
5A Constant Frequency Hysteretic Synchronous Regulator  
Figure 8 · Over Current Protection(CH4 OUTPUT CURRENT 5A/DIV)  
Figure 9 · Startup (CH2 VOUT 2V/DIV, CH4 CURRENT 2A/DIV)  
10  
Application Information  
Efficiency vs. IOUT  
100.00%  
90.00%  
80.00%  
70.00%  
60.00%  
50.00%  
40.00%  
30.00%  
20.00%  
10.00%  
0.00%  
0
1000  
2000  
3000  
5000  
6000  
4000  
IOUT (mA)  
Figure 10 · Output Efficiency @VOUT=5V, VIN=12V  
Application Information  
Symbol Used In Application Information:  
Description  
Symbol  
Input voltage  
Output voltage  
Output current  
VIN  
VOUT  
IOUT  
∆VRIPPLE  
FS  
Output voltage ripple  
Working frequency  
Inductor current ripple  
∆IRIPPLE  
Output Inductor Selection  
The selection of inductor value is based on inductor ripple current, power rating, working frequency  
and efficiency. Larger inductor value normally means smaller ripple current. However if the  
inductance is chosen too large, it brings slow response and lower efficiency. Usually the ripple  
current ranges from 20% to 40% of the output current. This is a design freedom which can be  
decided by design engineer according to various application requirements. The inductor value can  
be calculated by using the following equations:  
푉퐼ꢁ − 푉푂푈푇 푉푂푈푇  
1
ꢀ푂푈푇  
=
×
×
∆퐼ꢂꢃ푃푃퐿퐸  
푉
ꢃ푁  
퐹
푆
퐼ꢂꢃ푃푃퐿퐸 = 퐾 × 퐼푂푈푇푃푈푇  
where k is between 0.2 to 0.4.  
11  
5A Constant Frequency Hysteretic Synchronous Regulator  
Output Capacitor Selection  
Output capacitor is basically decided by the amount of the output voltage ripple allowed during  
steady state (DC) load condition as well as specification for the load transient. The optimum design  
may require a couple of iterations to satisfy both conditions. The amount of voltage ripple during  
the DC load condition is determined by the following equation:  
∆퐼ꢂꢃ푃푃퐿퐸  
∆푉ꢂꢃ푃푃퐿퐸 = ꢄꢅ푅 × ∆퐼ꢂꢃ푃푃퐿퐸  
+
8 × 퐹 × ꢆ푂푈푇  
푆
Where ESR is the output capacitors' equivalent series resistance, COUT is the value of output  
capacitors. Typically when ceramic capacitors are selected as output capacitors, DC ripple spec is  
easy to be met, but multiple ceramic capacitors are required at the output to meet transient  
requirement.  
Compensator Design  
Due to the double pole generated by LC filter of the power stage, the power system has 180° phase  
shift, and therefore, is unstable by itself. In order to achieve accurate output voltage and fast  
transient response, compensator is employed to provide highest possible bandwidth and enough  
phase margin. Ideally, the Bode plot of the closed loop system has crossover frequency between  
1/10 and 1/5 of the switching frequency, phase margin greater than 50° and the gain crossing 0dB  
with 20dB/decade.  
Power stage output capacitors usually decide the compensator type. If electrolytic capacitors are  
chosen as output capacitors, type II compensator can be used to compensate the system, because  
the zero caused by output capacitor ESR is lower than crossover frequency. Otherwise type III  
compensator should be chosen.  
A. Type III Compensator Design  
For low ESR output capacitors, typically such as Sanyo Os-Con and Poscap, the frequency of ESR  
zero caused by output capacitors is higher than the crossover frequency. In this case, it is  
necessary to compensate the system with type III compensator.  
The following figures and equations show how to realize the type III compensator by  
transconductance amplifier.  
1
퐹푍1  
퐹푍2  
=
=
2 × 휋 × 푅4 × ꢆ2  
1
2 × 휋 × (푅2 + 푅3) × ꢆ3  
1
퐹푃1  
퐹푃2  
=
=
2 × 휋 × 푅3 × ꢆ3  
1
ꢆ1 × ꢆ2  
2 × 휋 × 푅4 ×  
ꢆ1 + ꢆ2  
Where, FZ1, FZ2, FP1, and FP2 are poles and zeros in the compensator. Their locations are shown in  
figure 10. The transfer function of type III compensator for transconductance amplifier is given by:  
1 − 푔푚 × ꢇ푓  
푉
푒
=
푉푂푈푇 1 + 푔푚 × ꢇ푖푛 + ꢇ푖푛/푅1  
For the voltage amplifier, the transfer function of compensator is  
−ꢇ푓  
ꢇ푖푛  
푉
푒
=
푉푂푈푇  
12  
Application Information  
To achieve the same effect as voltage amplifier, the compensator of transconductance amplifier  
must satisfy this condition: R4>>2/gm. And it would be desirable if R1||R2||R3>>1/gm can be met at  
the same time.  
Zf  
VOUT  
ZIN  
C1  
R3  
C2  
R4  
R2  
C3  
Fb  
-
gm  
+
R1  
Vref  
Figure 11 · Type III Compensator using Transconductance Amplifier  
Power Stage  
F
LC  
40dB/decade  
Loop Gain  
20dB/decade  
F
ESR  
FO  
Compensator  
FZ1  
FZ2  
F
P2  
F
P1  
FS  
Figure 12 · Bode Plot of Type III Compensator  
13  
5A Constant Frequency Hysteretic Synchronous Regulator  
B. Type II Compensator Design  
Type II compensator can be realized by simple RC circuit without feedback as shown in figure 12.  
R3 and C1 introduce a zero to cancel the double pole effect. C2 introduces a pole to suppress the  
switching noise. The following equations show the compensator pole zero location and constant  
gain.  
푅1  
퐺푎ꢈꢉ = 푔푚 ×  
× 푅3  
푅1 + 푅2  
1
퐹푍 =  
2 × 휋 × 푅3 × ꢆ1  
1
퐹푃 ≈  
2 × 휋 × 푅3 × ꢆ2  
For this type of compensator, FO has to satisfy FLC<FESR<<FO<=1/10~1/5Fs.  
Power Stage  
40dB/decade  
Loop Gain  
20dB/decade  
Compensator  
Gain  
FO  
F
ESR  
FZ  
F
LC  
FP  
Figure 13 · Bode Plot of Type II Compensator  
VOUT  
R2  
-
Ve  
gm  
+
R1  
R3  
Vref  
C2  
C1  
Figure 14 · Type II Compensator with Transconductance Amplifier  
14  
Application Information  
Output Voltage Calculation  
Output voltage is set by reference voltage and external voltage divider. The reference voltage is  
fixed at 0.8V. The divider consists of two ratioed resistors so that the output voltage applied at the  
Fb pin is 0.8V when the output voltage is at the desired value. The following equation and picture  
show the relationship between VOUT, VREF, and voltage divider.  
푅2 × 푉ꢂ퐸ꢊ  
푅1 =  
푉푂푈푇 − 푉ꢂ퐸ꢊ  
Where, R2 is part of the compensator, and the value of R1 value can be set by voltage divider. See  
compensator design for R1 and R2 selection.  
VOUT  
R2  
Fb  
-
+
R1  
Vref  
Voltage Divider  
Figure 15 · Voltage Divider  
Frequency Selection  
The frequency can be set by external RT resistor. The relationship between frequency and RT pin  
is shown as follows:  
NX9415 Frequency vs RRT  
2500  
2000  
1500  
1000  
500  
0
33  
23  
3
13  
Rt(kohm)  
Figure 16 · Frequency Versus RT Resistor  
15  
5A Constant Frequency Hysteretic Synchronous Regulator  
MCM 24 PIN 4 x 4 PACKAGE OUTLINE DIMENSIONS  
TOP VIEW  
BOTTOM VIEW  
PIN #1 Identification  
Chamfer 0.300 x 45°  
By Marking  
4.000±0.050  
2.600±0.050  
Exp.DAP  
0.400±0.050  
4.000±0.050  
0.500 Bsc  
1.125±0.050  
Exp.DAP  
SIDE VIEW  
0.250±0.050  
0.900  
2.500Ref.  
0.203 Ref.  
0.000-0.050  
Figure 17 · Package Dimensions  
Note: All dimensions are displayed in millimeters.  
16  
Microsemi Corporation (NASDAQ: MSCC) offers a comprehensive portfolio of semiconductor  
solutions for: aerospace, defense and security; enterprise and communications; and industrial  
and alternative energy markets. Products include high-performance, high-reliability analog and  
RF devices, mixed signal and RF integrated circuits, customizable SoCs, FPGAs, and  
complete subsystems. Microsemi is headquartered in Aliso Viejo, Calif. Learn more at  
www.microsemi.com.  
Microsemi Corporate Headquarters  
One Enterprise, Aliso Viejo CA 92656 USA  
Within the USA: +1(949) 380-6100  
Sales: +1 (949) 380-6136  
© 2013 Microsemi Corporation. All rights reserved. Microsemi and the Microsemi logo are trademarks of  
Microsemi Corporation. All other trademarks and service marks are the property of their respective owners.  
Fax: +1 (949) 215-4996  
NX9415.0/01.3  
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