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IXTA130N10T7

型号：

IXTA130N10T7

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

128 K

下载PDF手册
TrenchMVTM  
Power MOSFET  
IXTA130N10T7  
VDSS = 100V  
ID25 = 130A  
RDS(on) ≤ 9.1mΩ  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263 (7-lead) (IXTA..7)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
100  
100  
V
V
VDGR  
1
VGSM  
Transient  
± 20  
V
7
ID25  
ILRMS  
IDM  
TC = 25°C  
Lead Current Limit, RMS  
TC = 25°C, pulse width limited by TJM  
130  
120  
350  
A
A
A
(TAB)  
Pins: 1 - Gate  
2, 3 - Source  
4 - NC (cut)  
IA  
TC = 25°C  
TC = 25°C  
TC = 25°C  
65  
400  
360  
A
mJ  
W
EAS  
PD  
5,6,7 - Source  
TAB (8) - Drain  
TJ  
-55 ... +175  
175  
°C  
°C  
°C  
Features  
TJM  
Tstg  
-55 ... +175  
ꢀ
Ultra-low On Resistance  
Unclamped Inductive Switching (UIS)  
rated  
Low package inductance  
- easy to drive and to protect  
175°C Operating Temperature  
ꢀ
TL  
TSOLD  
1.6mm (0.062in.) from case for 10s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
ꢀ
ꢀ
Weight  
3
g
Advantages  
ꢀ
Easy to mount  
Space savings  
High power density  
ꢀ
ꢀ
Symbol  
Test Conditions  
Characteristic Values  
Applications  
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
ꢀ
Automotive  
BVDSS  
VGS(th)  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
100  
2.5  
V
V
- Motor Drives  
- 42V Power Bus  
4.5  
- ABS Systems  
IGSS  
IDSS  
VGS = ± 20V, VDS = 0V  
±200 nA  
μA  
ꢀ
DC/DC Converters and Off-line UPS  
Primary Switch for 24V and 48V  
Systems  
Distributed Power Architechtures  
and VRMs  
Electronic Valve Train Systems  
High Current Switching  
ꢀ
VDS = VDSS  
VGS = 0V  
5
TJ = 150°C  
250 μA  
9.1 mΩ  
ꢀ
RDS(on)  
VGS = 10V, ID = 25A, Notes 1, 2  
ꢀ
ꢀ
Applications  
High Voltage Synchronous Recifier  
ꢀ
DS99707A(07/08)  
© 2008 IXYS CORPORATION, All rights reserved  
IXTA130N10T7  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
TO-263 (7-lead) (IXTA..7) Outline  
(TJ = 25°C, unless otherwise specified)  
gfs  
VDS = 10V, ID = 60A, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
55  
93  
S
Ciss  
Coss  
Crss  
5080  
635  
95  
pF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
30  
47  
44  
28  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 20V, ID = 25A  
RG = 5Ω (External)  
Qg(on)  
Qgs  
104  
30  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 25  
Qgd  
29  
Pins: 1 - Gate  
2, 3 - Source  
4 - Drain  
RthJC  
0.42 °C/W  
5,6,7 - Source  
Tab (8) - Drain  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
130  
350  
1.0  
IS  
VGS = 0V  
A
A
V
ISM  
VSD  
Repetitive, Pulse width limited by TJM  
IF = 25A, VGS = 0V, Note 1  
trr  
67  
4.7  
ns  
A
IF = 25A, VGS = 0V  
IRM  
QRM  
-di/dt = 100A/μs  
VR = 50V  
160  
nC  
Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
2. On through-hole packages, RDS(on) Kelvin test contact  
location must be 5mm or less from the package body  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTA130N10T7  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
280  
240  
200  
160  
120  
80  
130  
120  
110  
100  
90  
VGS = 10V  
9V  
VGS = 10V  
8V  
8V  
7V  
80  
7V  
6V  
70  
60  
50  
40  
30  
20  
40  
6V  
3
10  
0
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2  
VDS - Volts  
0
1
2
4
5
6
7
8
9
10  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 65A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 150ºC  
130  
120  
110  
100  
90  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
VGS = 10V  
VGS = 10V  
9V  
8V  
I D = 130A  
80  
7V  
6V  
5V  
I D = 65A  
70  
60  
50  
40  
30  
20  
10  
0
0.0  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
2.8  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 65A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
140  
120  
100  
80  
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
External Lead Current Limit for TO-263 (7-Lead)  
VGS = 10V  
TJ = 175ºC  
15V - - - -  
External Lead Current Limit for TO-3P, TO-220, & TO-263  
60  
40  
TJ = 25ºC  
20  
0
0
40  
80  
120  
160  
200  
240  
280  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
ID - Amperes  
TC - Degrees Centigrade  
© 2008 IXYS CORPORATION, All rights reserved  
IXTA130N10T7  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
270  
240  
210  
180  
150  
120  
90  
130  
120  
110  
100  
90  
TJ = - 40ºC  
TJ = - 40ºC  
25ºC  
150ºC  
25ºC  
80  
70  
60  
150ºC  
50  
40  
30  
60  
20  
30  
10  
0
0
0
20  
40  
60  
80 100 120 140 160 180 200 220  
ID - Amperes  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
VGS - Volts  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
270  
240  
210  
180  
150  
120  
90  
VDS = 50V  
I D = 25A  
I
G = 10mA  
TJ = 150ºC  
TJ = 25ºC  
60  
30  
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
1.3  
0
10  
20  
30  
40  
50  
60  
70  
80  
90 100 110  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
10,000  
1,000  
100  
1.00  
0.10  
0.01  
C
iss  
C
oss  
C
rss  
f = 1 MHz  
10  
0
5
10  
15  
20  
25  
30  
35  
40  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXTA130N10T7  
Fig. 13. Resistive Turn-on  
Rise Time vs. Junction Temperature  
Fig. 14. Resistive Turn-on  
Rise Time vs. Drain Current  
65  
60  
55  
50  
45  
40  
35  
30  
25  
62  
58  
54  
50  
46  
42  
38  
34  
30  
26  
22  
RG = 5  
Ω
RG = 5  
Ω
VGS = 10V  
DS = 50V  
VGS = 10V  
VDS = 50V  
V
TJ = 25ºC  
I D = 50A  
TJ = 125ºC  
I D = 25A  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
25  
30  
35  
40  
45  
50  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
130  
120  
110  
100  
90  
53  
50  
47  
44  
41  
38  
35  
32  
29  
26  
23  
20  
40  
68  
64  
60  
56  
52  
48  
44  
40  
t f  
RG = 5 , VGS = 10V  
t
d(off) - - - -  
t r  
t
d(on) - - - -  
TJ = 125ºC, VGS = 10V  
38  
36  
34  
32  
30  
28  
26  
Ω
VDS = 50V  
VDS = 50V  
I D = 25A  
I D = 50A  
80  
I D = 25A  
70  
60  
I D = 50A  
50  
40  
30  
20  
4
6
8
10  
12  
14  
16  
18  
20  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
100  
90  
80  
70  
60  
50  
40  
30  
170  
150  
130  
110  
90  
40  
38  
36  
34  
32  
30  
28  
26  
24  
70  
66  
62  
58  
54  
50  
46  
42  
38  
25A < I D < 50A  
t r  
t
d(on) - - - -  
TJ = 125ºC, VGS = 10V  
VDS = 50V  
TJ = 125ºC  
t f  
RG = 5 , VGS = 10V  
t
d(off) - - - -  
Ω
VDS = 50V  
I D = 25A  
I D = 50A  
70  
TJ = 25ºC  
50  
30  
4
6
8
10  
12  
14  
16  
18  
20  
25  
30  
35  
40  
45  
50  
RG - Ohms  
ID - Amperes  
© 2008 IXYS CORPORATION, All rights reserved  
IXYS REF: T_130N10T(4V)7-29-08-A  
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