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IXEH25N120D1

型号：

IXEH25N120D1

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

80 K

下载PDF手册
IXEH 25N120  
IXEH 25N120D1  
NPT3 IGBT  
IC25  
VCES  
= 36 A  
= 1200 V  
VCE(sat)typ = 2.6 V  
C
E
C
E
TO-247 AD  
G
G
G
C
E
B)  
IXEH25N120  
IXEH25N120D1  
Features  
• NPT3 IGBT  
IGBT  
Symbol  
VCES  
Conditions  
Maximum Ratings  
- positive temperature coefficient of  
saturation voltage for easy paralleling  
- fast switching  
- short tail current for optimized  
performance in resonant circuits  
• optional HiPerFREDTM diode  
- fast reverse recovery  
TVJ = 25°C to 150°C  
1200  
20  
V
V
VGES  
IC25  
IC90  
TC = 25°C  
TC = 90°C  
36  
24  
A
A
- low operating forward voltage  
- low leakage current  
• TO-247 package  
- industry standard outline  
- epoxy meets UL 94V-0  
ICM  
VCEK  
VGE = 15 V; RG = 68 Ω; TVJ = 125°C  
60  
VCES  
A
µs  
W
RBSOA, Clamped inductive load; L = 100 µH  
tSC  
(SCSOA)  
VCE = 900V; VGE = 15 V; RG = 68 Ω; TVJ = 125°C  
non-repetitive  
10  
Ptot  
TC = 25°C  
200  
Applications  
• AC drives  
• DC drives and choppers  
• Uninteruptible power supplies (UPS)  
• switched-mode and resonant-mode  
power supplies  
Symbol  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
min.  
typ. max.  
• inductive heating, cookers  
VCE(sat)  
IC = 25 A; VGE = 15 V; TVJ = 25°C  
TVJ = 125°C  
2.6  
3.2  
3.2  
V
V
VGE(th)  
ICES  
IC = 0.6 mA; VGE = VCE  
4.5  
6.5  
V
VCE = VCES;VGE = 0 V; TVJ = 25°C  
TVJ = 125°C  
0.2 mA  
mA  
0.2  
IGES  
VCE = 0 V; VGE  
=
20 V  
200 nA  
td(on)  
tr  
td(off)  
tf  
Eon  
Eoff  
205  
105  
320  
175  
4.1  
ns  
ns  
ns  
ns  
mJ  
mJ  
Inductive load, TVJ = 125°C  
VCE = 600 V; IC = 20 A  
VGE = 15 V; RG = 68 Ω  
1.5  
Cies  
QGon  
VCE = 25 V; VGE = 0 V; f = 1 MHz  
VCE = 600 V; VGE = 15 V; IC = 20 A  
1.2  
100  
nF  
nC  
RthJC  
0.63 K/W  
© 2005 IXYS All rights reserved  
1 - 4  
IXEH 25N120  
IXEH 25N120D1  
Diode [D1 version only]  
EquivalentCircuitsforSimulation  
Conduction  
Symbol  
Conditions  
Maximum Ratings  
IF25  
IF90  
TC = 25°C  
TC = 90°C  
31  
19  
A
A
Symbol  
VF  
Conditions  
Characteristic Values  
min. typ. max.  
IGBT (typ. at VGE = 15 V; TJ = 125°C)  
V0 = 1.09 V; R0 = 85 mΩ  
IF = 25 A; TVJ = 25°C  
TVJ = 125°C  
2.7  
2.1  
3.2  
V
V
Free Wheeling Diode (typ. at TJ = 125°C)  
V0 = 1.3 V; R0 = 32 mΩ  
IRM  
trr  
IF = 15 A; di /dt = -400 A/µs; TVJ = 125°C  
VR = 600 V;FVGE = 0 V  
16  
130  
A
ns  
Thermal Response  
RthJC  
1.6 K/W  
Component  
Symbol  
Conditions  
Maximum Ratings  
TVJ  
Tstg  
-55...+150  
-55...+150  
°C  
°C  
IGBT (typ.)  
Cth1 = 0.004 J/K; Rth1 = 0.335 K/W  
Cth2 = 0.133 J/K; Rth2 = 0.295 K/W  
Md  
mounting torque  
Conditions  
0.8...1.2  
Nm  
Free Wheeling Diode (typ.)  
Symbol  
Characteristic Values  
min. typ. max.  
Cth1 = 0.004 J/K; Rth1 = 1.076 K/W  
Cth2 = 0.078 J/K; Rth2 = 0.524 K/W  
RthCH  
with heatsink compound  
0.25  
K/W  
g
Weight  
6
TO-247 AD Outline  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
∅P 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
© 2005 IXYS All rights reserved  
2 - 4  
IXEH 25N120  
IXEH 25N120D1  
80  
A
60  
A
VGE = 17 V  
15 V  
VGE = 17 V  
15 V  
50  
IC  
TVJ = 125°C  
IC 60  
13 V  
40  
30  
20  
10  
0
TVJ = 25°C  
13 V  
40  
20  
0
11 V  
9 V  
11 V  
9 V  
V
V
0
1
2
3
4
5
6
0
1
2
3
4
5
6
VCE  
VCE  
Fig. 1 Typ. output characteristics  
Fig. 2 Typ. output characteristics  
50  
80  
A
VCE = 20 V  
A
IF  
60  
IC  
30  
20  
10  
0
TVJ = 25°C  
TVJ = 125°C  
TVJ = 25°C  
40  
20  
0
TVJ = 125°C  
V
0
1
2
3
4
0
5
10  
15  
20  
V
VF  
VGE  
Fig. 3 Typ. transfer characteristics  
Fig. 4 Typ. forward characteristics of  
freewheelingdiode  
40  
A
200  
ns  
15  
V
VCE = 600 V  
IC = 20 A  
12  
30  
150  
IRM  
trr  
VGE  
trr  
9
20  
10  
0
100  
50  
0
6
3
0
TVJ = 125°C  
V
R = 600 V  
IF = 15 A  
IRM  
FII30-12E  
0
200  
400  
600  
A/µs 1000  
0
20  
40  
60  
80 nC 100  
QG  
-di/dt  
Fig. 5 Typ. turn on gate charge  
Fig. 6 Typ. turn off characteristics of  
freewheelingdiode  
© 2005 IXYS All rights reserved  
3 - 4  
IXEH 25N120  
IXEH 25N120D1  
20  
mJ  
16  
250  
ns  
4.0  
mJ
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
400  
td(on)  
td(off)  
ns  
200  
tr  
300  
250  
200  
150  
100  
50  
Eoff  
Eon  
VCE = 600 V  
VGE 15 V  
t
t
VCE = 600 V  
VGE 15 V  
=
12  
8
150  
100  
50  
=
RG = 68 Ω  
TVJ = 125°C  
RG = 68 Ω  
TVJ = 125°C  
4
Eoff  
tf  
Eon  
0
0
40  
0
40  
A
0
10  
20  
30  
0
10  
20  
30  
A
IC  
IC  
Fig. 7 Typ. turn on energy and switching  
times versus collector current  
Fig. 8 Typ. turn off energy and switching  
times versus collector current  
10  
2.5  
mJ  
2.0  
1250  
ns  
VCE = 600 V  
VGE 15 V  
mJ  
8
=
1000  
IC = 20 A  
TVJ = 125°C  
Eoff  
Eon  
t
td(off)  
6
4
2
0
1.5  
1.0  
0.5  
0.0  
750  
500  
250  
0
Eoff  
VCE = 600 V  
VGE  
= 15 V  
IC = 20 A  
TVJ = 125°C  
tf  
200 Ω 250  
Ω
0
50  
100  
150  
RG  
200  
250  
0
50  
100  
150  
RG  
Fig. 9 Typ. turn on energy vs gate resistor  
Fig.10 Typ. turn off energy and switching  
times versus gate resistor  
80  
A
10  
K/W  
60  
ZthJC  
ICM  
diode  
IGBT  
RG = 68 Ω  
40  
20  
0
1
T
VJ = 125°C  
single pulse  
IXEH 25N120  
0.1  
1
10  
100  
1000  
t
10000  
ms  
0
200 400 600 800 1000 1200  
VCE  
V
Fig. 11 Reversebiasedsafeoperatingarea  
RBSOA  
Fig. 12 Typ. transient thermal impedance  
© 2005 IXYS All rights reserved  
4 - 4  
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