IXTL2x18010T
ISOPLUS I5-PakTM (IXTL) Outline
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 10V, ID = 60A, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
70
110
S
Ciss
Coss
Crss
6900
923
pF
pF
pF
162
RGi
td(on)
tr
Gate Input Resistance
3.0
33
54
42
31
Ω
ns
ns
ns
ns
1,5 = Drain
2,4 = Source
Resistive Switching Times
3
6
= Gate
= Isolated
V
GS = 10V, VDS = 0.5 • VDSS, ID = 25A
td(off)
tf
RG = 3.3Ω (External)
Qg(on)
Qgs
151
39
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 25A
Qgd
45
RthJC
RthCS
1.0 °C/W
°C/W
0.15
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
180
450
1.0
IS
VGS = 0V
A
A
ISM
VSD
trr
Repetitive, Pulse Width Limited by TJM
IF = 50A, VGS = 0V, Note 1
V
60
ns
IF = 25A, VGS = 0V
-di/dt = 100A/μs, VR = 50V
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
ΙΞΨΣ Ρεσερϖεσ τηε Ριγητ το Χηανγε Λιμιτσ, Τεστ Χονδιτιονσ, ανδ Διμενσιονσ.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
