请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXTQ88N28T

型号：

IXTQ88N28T

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

109 K

下载PDF手册
IXTQ88N28T  
VDSS = 280V  
ID25 = 88A  
RDS(on) ≤ 44mΩ  
Trench Gate  
Power MOSFET  
N-Channel Enhancement Mode  
For Plasma Display Applications  
Symbol  
TestConditions  
Maximum Ratings  
TO-3P(IXTQ)  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MΩ  
280  
280  
V
V
VGSM  
Transient  
±30  
V
ID25  
TC = 25°C  
88  
75  
A
A
A
G
D
IDRMS  
IDM  
External lead current limit  
TC = 25°C, pulse width limited by TJM  
(TAB)  
S
250  
PD  
TC = 25°C  
625  
W
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features  
TL  
Maximumleadtemperatureforsoldering  
1.6mm (0.062 in.) from case for 10s  
300  
260  
°C  
°C  
z Trench gate construction for low RDS(on)  
z Internationalstandardpackage  
z Lowpackageinductance  
TSOLD  
Md  
Mountingtorque  
1.13/10 Nm/lb.in.  
5.5  
- easy to drive and to protect  
Weight  
g
Advantages  
z
Easy to mount  
Space savings  
z
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
VDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID =1mA  
VDS = VGS, ID = 1mA  
VGS = ±20 V, VDS = 0V  
280  
V
V
3.0  
5.0  
±200  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
1
200  
μA  
μA  
TJ = 125°C  
RDS(on)  
VGS = 10 V, ID = 0.5 • ID25, Note1  
38  
44 mΩ  
DS99353B(01/08)  
© 2008 IXYS All rights reserved  
IXTQ88N28T  
Symbol  
gfs  
TestConditions  
Characteristic Values  
TO-3P (IXTQ) Outline  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
VDS= 10 V, ID = 0.5 ID25, Note 1  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
40  
66  
S
Ciss  
Coss  
Crss  
5750  
600  
52  
pF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
Resistive Switching Times  
VGS = 15 V, VDS = 220 V, ID = 44A  
RG = 5Ω (External)  
38  
60  
96  
57  
ns  
ns  
ns  
ns  
Qg(on)  
Qgs  
138  
48  
nC  
nC  
nC  
VGS= 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
40  
RthJC  
RthCK  
0.20 °C/W  
°C/W  
0.25  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Symbol  
IS  
TestConditions  
Min.  
typ.  
Max.  
VGS = 0 V  
88  
A
A
V
ISM  
Repetitive, pulse width limited by TJM  
IF = IS, VGS = 0 V, Note 1  
250  
1.5  
VSD  
trr  
IF = 25 A  
-di/dt = 100 A/μs  
VR = 100 V  
200  
2.0  
ns  
QRM  
μC  
Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs andIGBTsarecovered  
byoneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  
6,771,478B2  
7,005,734B2 7,157,338B2  
7,063,975B2  
7,071,537  
Fig. 1. Output Characteristics  
@ 25  
Fig. 2. Extended Output Characteristics  
@ 25  
º
C
º
C
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
200  
180  
160  
140  
120  
100  
80  
V
GS  
=10V  
8V  
V
GS  
= 10V  
8V  
7V  
7V  
6V  
6V  
5V  
60  
40  
5V  
20  
0
0
2
4
6
8
10 12 14 16 18 20  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
VD S - Volts  
VD S - Volts  
Fig. 3. Output Characteristics  
@ 125  
Fig. 4. RDS(on Normalized to 0.5 ID25  
)
º
C
Value vs. Junction Temperature  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
3.1  
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
1
V
= 10V  
8V  
GS  
V
= 10V  
GS  
7V  
6V  
5V  
7
I
= 88A  
D
I
= 44A  
D
0.7  
0.4  
0
1
2
3
4
5
6
8
9
10  
-50  
-25  
0
25  
50  
75  
100 125 150  
VD S - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to  
0.5 ID25 Value vs. ID  
Fig. 6. Drain Current vs. Case  
Temperature  
3.7  
3.4  
3.1  
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
1
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
External Lead Current Limit  
V
GS  
= 10V  
T = 125 C  
º
J
T = 25 C  
º
J
0.7  
-50  
-25  
0
25  
50  
75  
100 125 150  
0
20 40 60 80 100 120 140 160 180 200  
I D - Amperes  
TC - Degrees Centigrade  
DS99353B(01/08)  
© 2008 IXYS All rights reserved  
IXTQ88N28T  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
160  
140  
120  
100  
80  
120  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
T = -40 C  
º
J
60  
T = 125  
º
C
C
C
J
25  
125  
º
C
40  
25  
º
º
º
C
-40  
20  
0
3.5  
4
4.5  
5
5.5  
6
6.5  
7
0
20 40 60 80 100 120 140 160 180 200  
VG S - Volts  
I D - Amperes  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
240  
210  
180  
150  
120  
90  
V
= 140V  
DS  
I
I
= 44A  
D
G
= 10mA  
T = 125 C  
º
J
60  
T = 25 C  
º
J
30  
0
0.4  
0.6  
0.8  
1
1.2  
1.4  
0
20  
40  
60  
80  
100  
120  
140  
VS D - Volts  
Q G - nanoCoulombs  
Fig. 12. Forward-Bias  
Safe Operating Area  
Fig. 11. Capacitance  
1000  
100  
10  
10000  
1000  
100  
T = 150ºC  
J
C
iss  
T
C
= 25ºC  
R
Limit  
DS(on)  
C
oss  
25µs  
100µs  
C
rss  
20  
f = 1MHz  
10  
0
5
10  
15  
25  
30  
35  
40  
10  
100  
1000  
VD S - Volts  
VD S - Volts  
IXsions.  
Fig. 13. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Second  
DS99353B(01/08)  
© 2008 IXYS All rights reserved  
厂商 型号 描述 页数 下载

IXYS

 		IXTA-200N085T N沟道增强模式额定雪崩[ N-Channel Enhancement Mode Avalanche Rated ] 5 页

LITTELFUSE

 		IXTA02N250 [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN ] 5 页

IXYS

 		IXTA02N250HV [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC PACKAGE-3 ] 5 页

LITTELFUSE

 		IXTA02N250HV [ Power Field-Effect Transistor, ] 6 页

IXYS

 		IXTA02N250HV-TRL [ Power Field-Effect Transistor, ] 5 页

IXYS

 		IXTA02N450HV 高电压功率MOSFET[ High Voltage Power MOSFETs ] 5 页

IXYS

 		IXTA05N100 高电压的MOSFET[ High Voltage MOSFET ] 4 页

IXYS

 		IXTA05N100-TRL [ Power Field-Effect Transistor, ] 5 页

LITTELFUSE

 		IXTA05N100HVTRL [ Power Field-Effect Transistor, 0.75A I(D), 1000V, 17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 2 PIN ] 4 页

IXYS

 		IXTA05N100P [ Fast Intrinsic Diode ] 7 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.220700s