IXTT12N150
IXTH12N150
Symbol
Test Conditions
Characteristic Values
TO-268 Outline
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 20V, ID = 0.5 • ID25, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
8
13
S
Ciss
Coss
Crss
3720
240
80
pF
pF
pF
td(on)
tr
td(off)
tf
26
16
53
14
ns
ns
ns
ns
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2 (External)
Terminals: 1 - Gate
2,4 - Drain
3 - Source
Qg(on)
Qgs
106
17
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
50
RthJC
RthCS
0.14 C/W
C/W
TO-247
0.21
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
IS
VGS = 0V
12
A
A
V
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
48
TO-247 Outline
1.4
trr
1.2
24.5
14.8
μs
A
IF = 6A, -di/dt = 100A/s
IRM
QRM
P
1
2
3
VR = 100V, VGS = 0V
μC
e
Note
1. Pulse test, t 300μs, duty cycle, d 2%.
Terminals: 1 - Gate
2 - Drain
3 - Source
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
e
5.20
5.72 0.205 0.225
L
L1
19.81 20.32
4.50
.780 .800
.177
P 3.55
3.65
.140 .144
Q
5.89
6.40 0.232 0.252
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
