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2SK4206G-U

型号:

2SK4206G-U

品牌:

PANASONIC[ PANASONIC ]

页数:

4 页

PDF大小:

407 K

This product complies with the RoHS Directive (EU 2002/95/EC).  
Silicon Junction FETs (Small Signal)  
2SK4206  
Silicon N-channel junction FET  
For impedance conversion in low frequency  
For electret capacitor microphone  
Package  
Features  
Code  
Low noise voltage NV  
High voltage gain GV  
Thin package: TSSSMini3-F1 (1.2 mm × 1.2 mm × 0.33 mm)  
TSSSMini3-F1  
Pin Name  
1: rain  
Absolute Maximum Ratings Ta = 25°C  
ce  
Parameter  
Drain-source voltage (Gate open)  
Drain-gate voltage (Souece open)  
Drain-source current (Gate open)  
Drain-gate current (Souece open)  
Power dissipation  
Symbol  
VDSO  
VDGO  
IDO  
Ratin
Unit  
V
20  
Marking Symbol: 9H  
V
2
mA  
mA  
mW  
°C  
IDG
PD  
100  
Operating ambient temperature  
Storage temperature  
To
–20 to +80  
5 to +125  
T
stg  
°C  
Electrical Characteristics Ta = 25°C±
Paame
Sym
ID  
Conditions  
Min  
170  
180  
660  
Typ  
Max  
470  
450  
Unit  
mA  
mA  
mS  
1
Drain current *  
VDS = 2.0 V, Rd = 2.2 kW ± 1%  
VDS = 2.0 V, Rd = 2.2 kW ± 1%, VGS = 0  
VD = 2.0 V, VGS = 0, f = 1 kHz  
2
ain-sourccurrnt *  
IDSS  
Forward transr conductanc
1500  
Yfs  
VD = 2.0 V, Rd = 2.2 kW ± 1%  
CO = 5 pF, A-curve  
3
Noise voltage *  
NV  
GV1  
GV2  
GV3  
10  
mV  
VD = 2.0 V, Rd = 2.2 kW ± 1%  
CO = 5 pF, eG = 10 mV, f = 1 kHz  
–5.0  
–3.0  
–7.0  
–1.0  
3.0  
VD = 12 V, Rd = 2.2 kW ± 1%  
CO = 5 pF, eG = 10 mV, f = 1 kHz  
Voltage gain  
dB  
dB  
VD = 1.5 V, Rd = 2.2 kW ± 1%  
CO = 5 pF, eG = 10 mV, f = 1 kHz  
–1.5  
VD = 2.0 V, Rd = 2.2 kW ± 1%  
CO = 5 pF, eG = 10 mV  
f = 1 kHz to 70 Hz  
4
DGV . f*  
0
1.7  
2.0  
Voltage gain difference  
0.5  
GV1 – GV3  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. A protection diode is built-in between gate and source of transistor. However if forward current ows between gate and source transistor  
might be damaged. So please be careful not insert reverse.  
3. *1: ID is assured for IDSS  
.
2: Rank classication  
*
Rank  
T
U
ID (mA)  
170 to 325  
180 to 305  
265 to 470  
275 to 450  
IDSS (mA)  
3: NV is assured for design.  
*
*
4: D|GV . f | is assured for AQL 0.065. (The measurement method is used by source-grounded circuit.)  
Publication date: August 2008  
SJF00101CED  
1
This product complies with the RoHS Directive (EU 2002/95/EC).  
2SK4206  
PD T  
ID VDS  
ID VGS  
a
3
120  
VDS = 2 V  
VGS = 0.6 V  
Ta = 25°C  
80  
60  
Ta = 85°C  
25°C  
0.5 V  
0.4 V  
80  
40  
2
1
0
40  
20  
0.3 V  
.2 V  
0.1 V  
25°C  
0
0
0
0
0.8  
0.4  
1.2  
80  
40  
120  
0
4
12  
(
)
V
Gate-source voltage VGS  
(
)
Ambient temperature Ta °C  
( )  
V
Drin-souce voltage VDS  
Yfs  VGS  
0.4  
0.3  
0.2  
VDS = 2 V  
Ta = 25°C  
0.1  
0
0.4  
0.8  
1.2  
(
V
Gate-source volage VGS  
2
SJF00101CED  
This product complies with the RoHS Directive (EU 2002/95/EC).  
2SK4206  
TSSSMini3-F1  
Unit: mm  
0.33 +00..0025  
0.08+00..0025  
3
+0.05  
0.02  
0.23  
0.40)  
(0.40)  
0.80 ±0.05  
1.20
5°  
SJF00101CED  
3
Request for your special attention and precautions in using the technical information and  
semiconductors described in this book  
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and  
regulations of the exporting country, especially, those with regard to security export control, must be observed.  
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples  
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other  
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other  
company which may arise as a result of the use of technical information described in this book.  
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office  
equipment, communications equipment, measuring instruments and household appliances).  
Consult our sales staff in advance for information on the following applications:  
Special applications (such as for airplanes, aerospace, automobiles, traffic contrl equipment, combustion equipment, life support  
systems and safety devices) in which exceptional quality and reliability equired, or if the failure or malfunction of the prod-  
ucts may directly jeopardize life or harm the human body.  
Any applications other than the standard applications intended.  
(4) The products and product specifications described in this book re subjet to change wnotice for modification and/or im-  
provement. At the final stage of your design, purchasingouse f the roducts, therfor the most up-to-date Product  
Standards in advance to make sure that the latest specifictions saisfy your requirements.  
(5) When designing your equipment, comply with the rnge f absolute maximuing nd the guaranteed operating conditions  
(operating power supply voltage and operating nvirnt etc.). Especiallyplee be creful not to exceed the range of absolute  
maximum rating on the transient state, such as powpower-off and mode-witching. Otherwise, we will not be liable for any  
defect which may arise later in your equpment
Even when the products are used withthe guarnteed values, ake nto te cosideration of incidence of break down and failure  
mode, possible to occur to semicuctor roducts. Mesures the syems such as redundant design, arresting the spread of fire  
or preventing glitch are recomin ordeto prevent pysicainjury, fire, social damages, for example, by using the products.  
(6) Comply with the instructionfor ue in rder to prevent reakdown and characteristics change due to external factors (ESD, EOS,  
thermal stress and mcanical stress) at the time of handlin, mounting or at customer's process. When using products for which  
damp-proof packinis reqred, satisfy the condions, suh as shelf life and the elapsed time since first opening the packages.  
(7) This book may e noreprinted or repwhther wholly or partially, without the prior written permission of Matsushita  
Electric ndurial Co., Ltd.  
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2SK0065P 晶体管| JFET | N沟道| 12V V( BR ) DSS | 40uA的我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

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