IXTH30N45 IXTH30N50
TO-247 AD Outline
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
P
VDS = 10 V; ID = 0.5 • ID25, pulse test
VGS= 0 V, VDS = 25 V, f = 1 MHz
18
28
S
Ciss
Coss
Crss
5680
635
240
pF
pF
pF
td(on)
tr
td(off)
tf
35
42
110
26
ns
ns
ns
ns
VGS= 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25
RG = 1 Ω, (External)
e
Dim.
Millimeter
Min.
Inches
Min. Max.
Max.
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
Qg(on)
Qgs
Qgd
227
29
110
nC
nC
nC
VGS= 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
RthJC
RthCK
0.35 K/W
K/W
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
0.15
20.80 21.46
15.75 16.26
e
5.20
5.72 0.205 0.225
L
19.81 20.32
.780 .800
L1
4.50
.177
P
3.55
5.89
3.65
.140 .144
Q
6.40 0.232 0.252
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
Source-Drain Diode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
TestConditions
TO-247 SMD Outline
IS
VGS = 0
30
120
1.5
A
ISM
VSD
Repetitive; pulse width limited by TJM
A
V
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr
IF = IS, -di/dt = 100 A/µs, VR = 100 V
850
ns
1. Gate
2. Collector
3. Emitter
4. Collector
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
b
b1
1.14
1.91
1.40
2.13
.045 .055
.075 .084
C
D
0.61
20.80
0.80
21.34
.024 .031
.819 .840
E
e
15.75
5.45
16.13
BSC
.620 .635
.215 BSC
L
4.90
2.70
2.10
0.00
1.90
5.10
2.90
2.30
0.10
2.10
.193 .201
.106 .114
.083 .091
L1
L2
L3
L4
.00
.004
.075 .083
ØP
Q
3.55
5.59
3.65
6.20
.140 .144
.220 .244
R
S
4.32
6.15
4.83
BSC
.170 .190
.242 BSC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
