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IXTP16N50PM

型号：

IXTP16N50PM

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

182 K

下载PDF手册
Advance Technical Information  
PolarHVTM Power  
MOSFET  
VDSS = 500V  
ID25 = 7.5A  
RDS(on) ≤ 420mΩ  
IXTP16N50PM  
(Electrically Isolated Tab)  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
OVERMOLDED  
(IXTP...M) OUTLINE  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1 MΩ  
500  
500  
V
V
VGSS  
VGSM  
Continuous  
Transient  
± 30  
± 40  
V
V
Isolated Tab  
G
D
S
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
7.5  
35  
A
A
G = Gate  
S = Source  
D = Drain  
IA  
EAS  
TC = 25°C  
TC = 25°C  
16  
750  
A
mJ  
dv/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ =150°C  
TC = 25°C  
10  
75  
V/ns  
W
Features  
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
°C  
°C  
°C  
ꢀPlastic Overmolded Tab for Electrical  
Isolation  
ꢀInternational Standard Package  
ꢀAvalanche Rated  
TL  
TSOLD  
1.6 mm (0.062 in.) from Case for 10 s  
Plastic Body for 10 s  
300  
260  
°C  
°C  
ꢀFast Intrinsic Diode  
ꢀLow Package Inductance  
Md  
Mounting Torque  
1.13/10 Nm/lb.in.  
Weight  
2.5  
g
Advantages  
ꢀHigh Power Density  
ꢀEasy to Mount  
Symbol  
Test Conditions  
Characteristic Values  
ꢀSpace Savings  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
500  
3.0  
Typ.  
Max.  
BVDSS  
VGS(th)  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
V
V
Applications  
5.5  
ꢀSwitched-Mode and Resonant-Mode  
Power Supplies  
IGSS  
IDSS  
VGS = ±30V, VDS = 0V  
±100 nA  
ꢀDC-DC Converters  
VDS = VDSS, VGS= 0V  
5 μA  
50 μA  
ꢀLaser Drivers  
ꢀAC and DC Motor Drives  
ꢀRobotics and Servo Controls  
TJ = 125°C  
RDS(on)  
VGS = 10V, ID = 8A, Note 1  
420 mΩ  
© 2009 IXYS CORPORATION, All Rights Reserved  
DS100149(04/09)  
IXTP16N50PM  
Symbol  
Test Conditions  
Characteristic Values  
ISOLATED TO-220 (IXTP...M)  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS= 20V, ID = 8A, Note 1  
9
16  
S
Ciss  
Coss  
Crss  
2480  
237  
18  
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
td(on)  
tr  
td(off)  
tf  
24  
28  
70  
25  
ns  
ns  
ns  
ns  
1
2
3
Resistive Switching Times  
VGS = 10V, VDS = 0.5 VDSS, ID = 8A  
ꢀ
RG = 10Ω (External)  
Qg(on)  
Qgs  
43  
15  
12  
nC  
nC  
nC  
VGS= 10V, VDS = 0.5  
ꢀ
VDSS, ID = 8A  
Qgd  
RthJC  
1.66 °C/W  
Terminals: 1 - Gate  
2 - Drain (Collector)  
3 - Source (Emitter)  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
16  
A
A
ISM  
VSD  
trr  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
64  
1.5  
V
IF = 16A, -di/dt = 100A/μs,  
400  
ns  
VR = 100V, VGS = 0V  
Notes:1. Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2 %.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTP16N50PM  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Output Characteristics  
@ 125ºC  
20  
18  
16  
14  
12  
10  
8
20  
18  
16  
14  
12  
10  
8
VGS = 10V  
VGS = 10V  
8V  
8V  
7V  
7V  
6V  
6
6
4
4
6V  
5V  
2
2
0
0
0
1
2
3
4
5
6
7
8
9
0
2
4
6
8
10  
12  
14  
16  
18  
20  
VDS - Volts  
VDS - Volts  
Fig. 3. RDS(on) Normalized to ID = 8A Value  
vs. Junction Temperature  
Fig. 4. RDS(on) Normalized to ID = 8A Value  
vs. Drain Current  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
VGS = 10V  
VGS = 10V  
TJ = 125ºC  
I D = 16A  
I D = 8A  
TJ = 25ºC  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
ID - Amperes  
TJ - Degrees Centigrade  
Fig. 5. Maximum Drain Current vs.  
Case Temperature  
Fig. 6. Input Admittance  
20  
18  
16  
14  
12  
10  
8
8
7
6
5
4
3
2
1
0
TJ = 125ºC  
25ºC  
- 40ºC  
6
4
2
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
4.0  
4.4  
4.8  
5.2  
5.6  
6.0  
6.4  
6.8  
7.2  
TJ - Degrees Centigrade  
VGS - Volts  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXTP16N50PM  
Fig. 8. Forward Voltage Drop of  
Fig. 7. Transconductance  
Intrinsic Diode  
28  
24  
20  
16  
12  
8
70  
60  
50  
40  
30  
20  
10  
0
TJ = - 40ºC  
25ºC  
125ºC  
TJ = 125ºC  
TJ = 25ºC  
4
0
0
2
4
6
8
10  
12  
14  
16  
18  
20  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
1.2  
ID - Amperes  
VSD - Volts  
Fig. 9. Gate Charge  
Fig. 10. Capacitance  
10  
9
8
7
6
5
4
3
2
1
0
10,000  
1,000  
100  
10  
VDS = 250V  
I D = 8A  
C
C
I G = 10mA  
iss  
oss  
C
rss  
= 1 MHz  
5
f
1
0
10  
15  
20  
25  
30  
35  
40  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
VDS - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal Impedance  
Fig. 11. Forward-Bias Safe Operating Area  
10.00  
1.00  
0.10  
0.01  
100.0  
10.0  
1.0  
RDS(on) Limit  
25µs  
100µs  
1ms  
10ms  
DC  
TJ = 150ºC  
TC = 25ºC  
Single Pulse  
0.1  
0.0001  
0.001  
0.01  
0.1  
1
10  
10  
100  
1000  
Pulse Width - Seconds  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: F_16N50P(5J)4-30-09-C  
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