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IXTA3N150HV-TRL

型号：

IXTA3N150HV-TRL

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

149 K

下载PDF手册
High Voltage  
Power MOSFET  
VDSS = 1500V  
ID25 = 3A  
RDS(on) 7.3  
IXTA3N150HV  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
TO-263  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
S
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
1500  
1500  
V
V
VDGR  
D (Tab)  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
G = Gate  
D
= Drain  
S = Source  
Tab = Drain  
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
3
9
A
A
IA  
EAS  
TC = 25C  
TC = 25C  
3
250  
A
mJ  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150C  
TC = 25C  
5
V/ns  
W
Features  
250  
High Voltage package  
Fast Intrinsic Diode  
Avalanche Rated  
Molding Epoxies meet UL 94 V-0  
Flammability Classification  
High Blocking Voltage  
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
C  
C  
C  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Weight  
2.5  
g
Advantages  
Easy to Mount  
Space Savings  
High Power Density  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
1500  
2.5  
Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250A  
VDS = VGS, ID = 250A  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
High Voltage Power Supplies  
Capacitor Discharge Applications  
5.0  
Pulse Circuits  
100 nA  
IDSS  
10 A  
TJ = 125C  
100 A  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
7.3  
DS100523B(1/18)  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXTA3N150HV  
Symbol  
Test Conditions  
Characteristic Values  
TO-263 (HV) Outline  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 20V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
2.2  
3.6  
S
Ciss  
Coss  
Crss  
1375  
90  
pF  
pF  
pF  
30  
td(on)  
tr  
td(off)  
tf  
19  
21  
42  
25  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 5(External)  
PIN: 1 - Gate  
2 - Source  
3 - Drain  
Qg(on)  
Qgs  
38.6  
6.5  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
19.0  
RthJC  
0.50 C/W  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
3
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
12  
1.3  
trr  
0.9  
15.0  
6.7  
μs  
A
IF = ID = 0.5 • ID25, -di/dt = 100A/s  
IRM  
QRM  
VR = 100V, VGS = 0V  
μC  
Note:  
1. Pulse test, t 300s, duty cycle, d 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTA3N150HV  
Fig. 1. Output Characteristics @ TJ = 25oC  
Fig. 2. Output Characteristics @ TJ = 125oC  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
V
= 10V  
7V  
GS  
V
= 10V  
GS  
6V  
6V  
5.5V  
5V  
5V  
4V  
4V  
0
4
8
12  
16  
20  
24  
28  
32  
0
5
10  
15  
20  
25  
30  
35  
40  
4.5  
6.0  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 1.5A Value vs.  
Drain Current  
Fig. 3. RDS(on) Normalized to ID = 1.5A Value vs.  
Junction Temperature  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
V
= 10V  
GS  
V
= 10V  
GS  
T = 125oC  
J
I
= 3A  
D
I
= 1.5A  
D
T = 25oC  
J
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 5. Maximum Drain Current vs. Case Temperature  
Fig. 6. Input Admittance  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
V
= 20V  
DS  
T
J
= 125oC  
25oC  
- 40oC  
3.2  
3.6  
4.0  
4.4  
4.8  
5.2  
5.6  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VGS - Volts  
TC - Degrees Centigrade  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXTA3N150HV  
Fig. 8. Forward Voltage Drop of Intrinsic Diode  
Fig. 7. Transconductance  
9
8
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
T
= - 40oC  
J
V
= 20V  
DS  
25oC  
125oC  
T
J
= 125oC  
T
J
= 25oC  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
40  
10  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
VSD - Volts  
ID - Amperes  
Fig. 9. Gate Charge  
Fig. 10. Capacitance  
10,000  
1,000  
100  
10  
V
= 750V  
DS  
= 1 MHz  
f
I
I
= 1.5A  
D
G
8
6
4
2
0
C
iss  
= 10mA  
C
oss  
C
rss  
10  
0
5
10  
15  
20  
25  
30  
35  
0
5
10  
15  
20  
25  
30  
35  
40  
VDS - Volts  
QG - NanoCoulombs  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Maximum Transient Thermal Impedance  
10  
1
R
Limit  
DS(on)  
25μs  
100μs  
1
1ms  
0.1  
10ms  
0.1  
0.01  
100ms  
T = 150oC  
= 25oC  
DC  
J
T
C
Single Pulse  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1,000  
10,000  
VDS - Volts  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: T_3N150(4N)5-02-16-B  
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