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IXTP120N04T2

型号：

IXTP120N04T2

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

7 页

PDF大小：

312 K

下载PDF手册
TrenchT2TM  
Power MOSFET  
VDSS = 40V  
ID25 = 120A  
RDS(on) 6.1m  
IXTA120N04T2  
IXTP120N04T2  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263 (IXTA)  
G
S
D (Tab)  
TO-220 (IXTP)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 175C  
40  
40  
V
V
VDGR  
TJ = 25C to 175C, RGS = 1M  
VGSM  
Transient  
20  
V
G
D
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
120  
360  
A
A
S
D (Tab)  
IA  
TC = 25C  
TC = 25C  
50  
A
G = Gate  
S = Source Tab = Drain  
D
= Drain  
EAS  
400  
mJ  
PD  
TC = 25C  
200  
W
TJ  
-55 ... +175  
175  
C  
C  
C  
Features  
TJM  
Tstg  
-55 ... +175  
International Standard Packages  
Avalanche Rated  
Low Package Inductance  
Fast Intrinsic Rectifier  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
FC  
Md  
Mounting Force (TO-263)  
Mounting Torque (TO-220)  
10..65 / 2.2..14.6  
1.13 / 10  
N/lb  
Nm/lb.in  
175°C Operating Temperature  
High Current Handling Capability  
ROHS Compliant  
High Performance Trench  
Weight  
TO-263  
TO-220  
2.5  
3.0  
g
g
Technology for extremely low RDS(on)  
Advantages  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min. Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250A  
VDS = VGS, ID = 250A  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
40  
V
V
Applications  
2.0  
4.0  
Automotive Engine Control  
Synchronous Buck Converter  
           100 nA  
A  
IDSS  
2
(for Notebook SystemPower &  
TJ = 150C  
VGS = 10V, ID = 25A, Notes 1 & 2  
50 A  
6.1 m  
General Purpose Point & Load)  
DC/DC Converters  
High Current Switching Applications  
RDS(on)  
Power Train Management  
Distributed Power Architecture  
  
DS99973B(7/18)  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXTA120N04T2  
IXTP120N04T2  
Symbol  
Test Conditions  
Characteristic Values  
TO-263 Outline  
A
(TJ = 25C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
E
E1  
C2  
L1  
L2  
gfs  
VDS = 10V, ID = 60A, Note 1  
28  
47  
S
D1  
D
4
H
A1  
Ciss  
Coss  
Crss  
3240  
557  
pF  
pF  
pF  
1
3
2
VGS = 0V, VDS = 25V, f = 1MHz  
b
b2  
L3  
c
e
e
0.43 [11.0]  
140  
0  
0.34 [8.7]  
td(on)  
tr  
td(off)  
tf  
14  
8
ns  
ns  
ns  
ns  
Resistive Switching Times  
0.66 [16.6]  
A2  
V
GS = 10V, VDS = 20V, ID = 60A  
1 - Gate  
2,4 - Drain  
3 - Source  
0.20 [5.0]  
0.10 [2.5]  
60.12 [3.0]  
0.06 [1.6]  
16  
11  
RG = 5(External)  
Qg(on)  
Qgs  
58  
17  
10  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS  
Qgd  
RthJC  
RthCS  
0.75 C/W  
C/W  
TO-220  
0.50  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
120  
480  
1.2  
IS  
VGS = 0V  
A
A
V
TO-220 Outline  
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = 60A, VGS = 0V, Note 1  
A
E
oP  
A1  
H1  
Q
trr  
35  
1.6  
28  
ns  
A
D2  
E1  
D
IF = 60A, VGS = 0V,  
IRM  
QRM  
D1  
-di/dt = 100A/s, VR = 20V  
nC  
A2  
EJECTOR  
PIN  
L1  
L
3X b  
3X b2  
ee  
c
e1  
Notes: 1. Pulse test, t 300s; duty cycle, d  2%.  
1 - Gate  
2,4 - Drain  
3 - Source  
2. On through-hole packages, RDS(on) Kelvin test contact  
location must be 5mm or less from the package body.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  
IXTA120N04T2  
IXTP120N04T2  
Fig. 1. Output Characteristics @ TJ = 25oC  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
120  
100  
80  
60  
40  
20  
0
350  
300  
250  
200  
150  
100  
50  
V
= 15V  
GS  
V
= 15V  
GS  
10V  
9V  
10V  
9V  
8V  
7V  
6V  
8V  
7V  
6V  
5V  
5V  
0
0
1
2
3
4
5
6
7
8
0.0  
0.0  
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 60A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150oC  
120  
100  
80  
60  
40  
20  
0
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 15V  
GS  
V
= 10V  
GS  
10V  
9V  
8V  
I
= 120A  
D
7V  
I
= 60A  
D
6V  
5V  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 60A Value vs.  
Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
120  
100  
80  
60  
40  
20  
0
V
= 10V  
15V  
GS  
T = 175oC  
J
T = 25oC  
J
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
40  
80  
120  
160  
200  
240  
280  
ID - Amperes  
TC - Degrees Centigrade  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXTA120N04T2  
IXTP120N04T2  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
70  
60  
50  
40  
30  
20  
10  
0
T = - 40oC  
J
25oC  
150oC  
T
J
= 150oC  
25oC  
- 40oC  
0
0
1
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
2.5  
0.4  
0
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
1.5  
40  
ID - Amperes  
VGS - Volts  
Fig. 10. Gate Charge  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
300  
270  
240  
210  
180  
150  
120  
90  
10  
9
8
7
6
5
4
3
2
1
0
V
= 20V  
DS  
I
I
= 60A  
D
G
= 10mA  
T = 150oC  
J
60  
T = 25oC  
J
30  
0
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
1.3  
1.4  
10  
20  
30  
40  
50  
60  
QG - NanoCoulombs  
VSD - Volts  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
10,000  
1,000  
100  
1000  
100  
10  
= 1 MHz  
f
R
Limit  
DS(on)  
C
iss  
25μs  
100μs  
1ms  
C
oss  
T
= 175oC  
J
10ms  
T
= 25oC  
C
100ms  
C
rss  
DC  
Single Pulse  
1
10  
100  
5
10  
15  
20  
25  
30  
35  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTA120N04T2  
IXTP120N04T2  
Fig. 14. Resistive Turn-on  
Rise Time vs. Drain Current  
Fig. 13. Resistive Turn-on  
Rise Time vs. Junction Temperature  
11  
10  
9
11  
10  
9
R
G
= 5Ω, V = 10V  
GS  
R
= 5Ω, V = 10V  
GS  
G
V
= 20V  
DS  
V
= 20V  
DS  
T
J
= 25oC  
8
8
7
7
I
= 60A  
D
6
6
5
5
I
= 120A  
D
4
T
J
= 125oC  
4
3
3
2
2
1
20  
30  
40  
50  
60  
70  
80  
90  
100  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
16  
18  
17  
16  
15  
14  
13  
12  
11  
10  
17  
28  
t r  
td(on)  
t f  
td(off)  
14  
12  
10  
8
TJ = 125oC, V = 10V  
GS  
R
G
= 5Ω, VGS = 10V  
15  
13  
11  
9
24  
20  
16  
12  
8
V
= 20V  
DS  
VDS = 20V  
ID = 60A  
I
= 60A, 120A  
D
ID = 120A  
6
4
2
7
0
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
4
6
8
10  
12  
14  
16  
18  
20  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 18. Resistive Turn-off  
Fig. 17. Resistive Turn-off  
Switching Times vs. Gate Resistance  
Switching Times vs. Drain Current  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
24  
22  
20  
18  
16  
14  
12  
10  
8
28  
26  
24  
22  
20  
18  
16  
14  
12  
t f  
td(off)  
t f  
td(off)  
R
G
= 5Ω, V = 10V  
GS  
T
J
= 125oC, V = 10V  
GS  
V
= 20V  
DS  
V
= 20V  
DS  
I
= 60A  
D
T
J
= 125oC, 25oC  
I
= 120A  
10  
D
4
6
8
12  
14  
16  
18  
20  
20  
30  
40  
50  
60  
70  
80  
90  
100  
ID - Amperes  
RG - Ohms  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXTA120N04T2  
IXTP120N04T2  
Fig. 19. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: T_120N04T2 (V3) 7-9-18-B  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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