2SK3254
N- Channel MOS Silicon FET
Very High-Speed Switching Applications
TENTATIVE
Features and Applications
• Low ON-state resistance.
• Low Qg.
unit
Absolute Maximum Ratings / Ta=25°C
Drain to Source Voltage
Gate to Source Voltage
Drain Current(DC)
VDSS
VGSS
ID*
V
V
500
±30
A
10
Drain Current(Pulse)
IDP
A
40
50
Allowable power Dissipation
Channel Temperature
PD
W
°C
°C
(TC=25°C)
Tch
150
Storage Temperature
Tstg
--55 to ±150
* ):Chip Performance Shown
Electrical Characteristics / Ta=25°C
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
min
500
typ
max
unit
V
V(BR)DSS
IDSS
ID=1mA
, VGS=0
250
±100
3.5
VDS=500V , VGS=0
VGS=±30V , VDS=0
VDS=10V , ID=1mA
VDS=10V , ID=5A
µA
nA
V
IGSS
VGS(off)
| yfs |
2.5
2.4
Forward Transfer Admittance
Static Drain to Source
S
6.3
0.8
1.0
RDS(on)
ID=5A
, VGS=10V
Ω
On State Resistance
Input Capacitance
Ciss
Coss
Crss
Qg
VDS=20V , f=1MHz
VDS=20V , f=1MHz
VDS=20V , f=1MHz
VDS=200V , ID=5A
VGS=10V
pF
pF
pF
nC
880
140
48
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
30
Turn-ON Delay Time
Rise Time
td(on)
tr
ns
ns
ns
ns
V
17
35
See Specified Test
Circuit
Turn-OFF Delay Time
Fall Time
td(off)
tf
100
38
Diode Forward Voltage
1.5
VSD
IS=5A
, VGS = 0
(Note) Be careful in handling the2SK3254 because it has no protection diode between gate and source.
Switching Time Test Circuit
Package Dimensions
TO-3PML(unit:mm)
φ 3.4
5.6
3.1
16.0
VDD=200V
ID=5A
RL=40Ω
PW=1µS
D.C.≤0.5%
VGS=10V
D
VOUT
2.8
1.0
2.0
2.0
0.6
G
2SK3254
RGS
50Ω
P.G
3
1
2
S
1 : Gate
2 : Drain
3 : Source
Specifications and information herin are subject to change without notice.
SANYO Electric Co., Ltd. Semiconductor Business Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN
990118TM2fXHD
