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IXTP120N075T2

型号：

IXTP120N075T2

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

206 K

下载PDF手册
Preliminary Technical Information  
TrenchT2TM  
Power MOSFET  
IXTA120N075T2  
IXTP120N075T2  
VDSS = 75V  
ID25 = 120A  
RDS(on) ≤ 7.7mΩ  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263 (IXTA)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
S
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
75  
75  
V
V
VDGR  
(TAB)  
VGSM  
Transient  
± 20  
V
TO-220 (IXTP)  
ID25  
ILRMS  
IDM  
TC = 25°C  
Lead Current Limit, RMS  
TC = 25°C, pulse width limited by TJM  
120  
75  
A
A
A
300  
IA  
TC = 25°C  
TC = 25°C  
TC = 25°C  
60  
600  
250  
A
mJ  
W
G
D
(TAB)  
S
EAS  
PD  
G = Gate  
D
= Drain  
TJ  
-55 ... +175  
175  
°C  
°C  
°C  
S = Source  
TAB = Drain  
TJM  
Tstg  
-55 ... +175  
Features  
TL  
Tsold  
1.6mm (0.062in.) from case for 10s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
z International standard packages  
z 175°C Operating Temperature  
z Avalanche Rated  
Low RDS(on)  
z High current handling capability  
Md  
Mounting torque (TO-220)  
1.13 / 10  
Nm/lb.in.  
Weight  
TO-263  
TO-220  
2.5  
3.0  
g
g
z
Advantages  
z
Easy to mount  
Space savings  
High power density  
z
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = ± 20V, VDS = 0V  
75  
V
V
Applications  
2.0  
4.0  
z
±200 nA  
μA  
Automotive  
- Motor Drives  
- 12V Battery  
- ABS Systems  
DC/DC Converters and Off-line UPS  
Primary- Side Switch  
IDSS  
VDS = VDSS  
VGS = 0V  
5
TJ = 150°C  
150 μA  
7.7 mΩ  
z
RDS(on)  
VGS = 10V, ID = 60A, Notes 1, 2  
z
z
High Current Switching Applications  
DS100051(10/08)  
© 2008 IXYS CORPORATION, All rights reserved  
IXTA120N075T2  
IXTP120N075T2  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
TO-263 (IXTA) Outline  
(TJ = 25°C, unless otherwise specified)  
gfs  
VDS = 10V, ID = 60A, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
38  
62  
S
Ciss  
Coss  
Crss  
4740  
585  
75  
pF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
13  
33  
21  
18  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 5Ω (External)  
Qg(on)  
Qgs  
78  
24  
23  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
RthJC  
RthCH  
0.60 °C/W  
°C/W  
TO-220  
0.50  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
120  
480  
1.3  
IS  
VGS = 0V  
A
A
V
ISM  
VSD  
Repetitive, Pulse width limited by TJM  
IF = 60A, VGS = 0V, Note 1  
TO-220 (IXTP) Outline  
trr  
50  
4
ns  
A
IF = 60A, VGS = 0V  
IRM  
QRM  
-di/dt = 100A/μs  
VR = 37V  
100  
nC  
Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
2. On through-hole packages, RDS(on) Kelvin test contact  
location must be 5mm or less from the package body.  
Pins: 1 - Gate  
3 - Source  
2 - Drain  
4 - Drain  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTA120N075T2  
IXTP120N075T2  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
120  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGS = 15V  
10V  
9V  
VGS = 15V  
10V  
300  
250  
200  
150  
100  
50  
9V  
8V  
8V  
7V  
7V  
6V  
5V  
6V  
5V  
0
0
1
2
3
4
5
6
7
8
9
10  
0.0  
0.0  
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 60A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 150ºC  
120  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
VGS = 15V  
10V  
9V  
VGS = 10V  
8V  
I D = 120A  
7V  
I D = 60A  
6V  
5V  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 60A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
80  
70  
60  
50  
40  
30  
20  
10  
0
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
VGS = 10V  
External Lead Current Limit  
15V - - - - -  
TJ = 175ºC  
TJ = 25ºC  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
30  
60  
90  
120 150 180 210 240 270 300  
ID - Amperes  
TC - Degrees Centigrade  
© 2008 IXYS CORPORATION, All rights reserved  
IXTA120N075T2  
IXTP120N075T2  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
140  
120  
100  
80  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
TJ = - 40ºC  
25ºC  
TJ = 150ºC  
25ºC  
- 40ºC  
150ºC  
60  
40  
20  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
300  
250  
200  
150  
100  
50  
VDS = 38V  
I
I
D = 60A  
G = 10mA  
TJ = 150ºC  
TJ = 25ºC  
0
0
10  
20  
30  
40  
50  
60  
70  
80  
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
1000  
100  
10  
10,000  
1,000  
100  
R
DS(on)  
Limit  
100µs 25µs  
1ms  
C
iss  
10ms  
Lead Limit  
C
oss  
DC, 100ms  
C
T
T
= 175ºC  
rss  
J
= 25ºC  
C
= 1MHz  
5
f
Single Pulse  
10  
1
0
10  
15  
20  
25  
30  
35  
40  
1
10  
VDS - Volts  
100  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: T_120N075T2(V4)10-29-08-A  
IXTA120N075T2  
IXTP120N075T2  
Fig. 14. Resistive Turn-on  
Rise Time vs. Drain Current  
Fig. 13. Resistive Turn-on  
Rise Time vs. Junction Temperature  
45  
40  
35  
30  
25  
20  
15  
10  
5
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
RG = 5ꢀ  
VGS = 10V  
VDS = 38V  
TJ = 25ºC  
RG = 5Ω  
I D = 120A  
VGS = 10V  
VDS = 38V  
I D = 60A  
TJ = 125ºC  
0
0
60 65 70 75 80 85 90 95 100 105 110 115 120  
ID - Amperes  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
TJ - Degrees Centigrade  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
200  
180  
160  
140  
120  
100  
80  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
28  
40  
t r  
t
d(on) - - - -  
tf  
RG = 5ꢀ, VGS = 10V  
t
d(off) - - - -  
26  
24  
22  
20  
18  
16  
14  
35  
30  
25  
20  
15  
10  
5
TJ = 125ºC, VGS = 10V  
DS = 38V  
V
VDS = 38V  
I D = 60A  
I D = 120A  
60  
40  
I D = 120A, 60A  
20  
0
0
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
4
6
8
10  
12  
14  
16  
18  
20  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
140  
120  
100  
80  
140  
120  
100  
80  
26  
24  
22  
20  
18  
16  
14  
38  
34  
30  
26  
22  
18  
14  
tf  
RG = 5ꢀ, VGS = 10V  
t
d(off) - - - -  
tf  
t
d(off) - - - -  
TJ = 125ºC, VGS = 10V  
VDS = 38V  
VDS = 38V  
TJ = 125ºC  
I D = 60A,120A  
60  
60  
TJ = 25ºC  
40  
40  
20  
20  
0
0
4
6
8
10  
12  
14  
16  
18  
20  
60  
70  
80  
90  
100  
110  
120  
RG - Ohms  
ID - Amperes  
© 2008 IXYS CORPORATION, All rights reserved  
IXTA120N075T2  
IXTP120N075T2  
Fig. 19. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: T_120N075T2(V4)10-29-08-A  
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