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IXTH48P20P

型号：

IXTH48P20P

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

6 页

PDF大小：

135 K

下载PDF手册
PolarPTM  
Power MOSFETs  
VDSS = - 200V  
ID25 = - 48A  
IXTT48P20P  
IXTH48P20P  
RDS(on)  
≤
85mΩ  
P-Channel Enhancement Mode  
Avalanche Rated  
TO-268 (IXTT)  
G
S
D (Tab)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TO-247 (IXTH)  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
- 200  
- 200  
V
V
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
G
D
S
D (Tab)  
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
- 48  
A
A
-144  
G = Gate  
S = Source  
D
= Drain  
IA  
TC = 25°C  
TC = 25°C  
- 48  
2.5  
A
J
Tab = Drain  
EAS  
dv/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
10  
V/ns  
W
462  
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
°C  
°C  
°C  
Features  
z International Standard Packages  
z Rugged PolarPTM Process  
z Avalanche Rated  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
z Low Package Inductance  
z Fast intrinsic Diode  
Md  
Mounting Torque (TO-247)  
1.13 / 10  
Nm/lb.in.  
Weight  
TO-268  
TO-247  
4
6
g
g
Advantages  
z
Easy to Mount  
Space Savings  
High Power Density  
z
z
Symbol  
Test Conditions  
Characteristic Values  
Applications  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
- 200  
- 2.0  
Typ.  
Max.  
z
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = - 250μA  
VDS = VGS, ID = - 250μA  
VGS = ±20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
High-Side Switches  
Push Pull Amplifiers  
DC Choppers  
Automatic Test Equipment  
z
- 4.0  
z
±100 nA  
z
z
Current Regulators  
IDSS  
- 25 μA  
TJ = 125°C  
- 200 μA  
RDS(on)  
VGS = -10V, ID = 0.5 • ID25, Note 1  
85 mΩ  
DS99981C(01/13)  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXTT48P20P  
IXTH48P20P  
Symbol  
Test Conditions  
Characteristic Values  
TO-268 Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = -10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = - 25V, f = 1MHz  
19  
32  
S
Ciss  
Coss  
Crss  
5400  
1040  
170  
pF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
30  
46  
67  
27  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 3Ω (External)  
Terminals: 1 - Gate  
2,4 - Drain  
3 - Source  
Qg(on)  
Qgs  
103  
23  
nC  
nC  
nC  
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
40  
RthJC  
RthCS  
0.27 °C/W  
°C/W  
TO-247  
0.21  
Safe Operating Area Specification  
Symbol  
SOA  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
TO-247 Outline  
VDS = - 200V, ID = -1.35A, TC = 70°C, Tp = 5s 270  
W
∅ P  
1
2
3
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
- 48  
A
A
V
e
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = - 24A, VGS = 0V, Note 1  
-192  
- 3.3  
Terminals: 1 - Gate  
2 - Drain  
3 - Source  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
trr  
QRM  
IRM  
260  
4.2  
- 32.2  
ns  
μC  
A
IF = - 24A, -di/dt = -100A/μs  
VR = -100V, VGS = 0V  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
Note  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
∅P 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTT48P20P  
IXTH48P20P  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
-50  
-45  
-40  
-35  
-30  
-25  
-20  
-15  
-10  
-5  
-160  
-140  
-120  
-100  
-80  
-60  
-40  
-20  
0
VGS = -10V  
- 9V  
VGS = -10V  
- 9V  
- 8V  
- 7V  
- 8V  
- 7V  
- 6V  
- 5V  
- 6V  
- 5V  
0
0.0  
-0.5  
-1.0  
-1.5  
-2.0  
-2.5  
-3.0  
-3.5  
-4.0  
-4.5  
0
-5  
-10  
-15  
-20  
-25  
-30  
150  
150  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = - 24A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
-50  
-45  
-40  
-35  
-30  
-25  
-20  
-15  
-10  
-5  
VGS = -10V  
- 9V  
VGS = -10V  
- 8V  
I D = - 48A  
- 7V  
- 6V  
I D = - 24A  
- 5V  
0
0
-1  
-2  
-3  
-4  
-5  
-6  
-7  
-8  
-50  
-25  
0
25  
50  
75  
100  
125  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = - 24A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
-52  
-44  
-36  
-28  
-20  
-12  
-4  
VGS = -10V  
TJ = 125ºC  
TJ = 25ºC  
0
-20  
-40  
-60  
-80  
-100  
-120  
-140  
-160  
-50  
-25  
0
25  
50  
75  
100  
125  
TC - Degrees Centigrade  
ID - Amperes  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXTT48P20P  
IXTH48P20P  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
-90  
-80  
-70  
-60  
-50  
-40  
-30  
-20  
-10  
0
60  
50  
40  
30  
20  
10  
0
TJ = - 40ºC  
TJ = - 40ºC  
25ºC  
125ºC  
25ºC  
125ºC  
-3.5  
-4.0  
-4.5  
-5.0  
-5.5  
-6.0  
-6.5  
-7.0  
-7.5  
-4.5  
-40  
0
-10  
-20  
-30  
-40  
-50  
-60  
-70  
-80  
-90  
VGS - Volts  
ID - Amperes  
Fig. 10. Gate Charge  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
-10  
-9  
-8  
-7  
-6  
-5  
-4  
-3  
-2  
-1  
0
-160  
-140  
-120  
-100  
-80  
-60  
-40  
-20  
0
VDS = -100V  
I
I
D = - 24A  
G = -1mA  
TJ = 125ºC  
TJ = 25ºC  
-0.5  
-1.0  
-1.5  
-2.0  
-2.5  
-3.0  
-3.5  
-4.0  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
110  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Maximum Transient Thermal Impedance  
1
10,000  
1,000  
100  
C
iss  
0.1  
C
oss  
0.01  
C
rss  
= 1 MHz  
-5  
f
0.001  
0
-10  
-15  
-20  
VDS - Volts  
-25  
-30  
-35  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTT48P20P  
IXTH48P20P  
Fig. 14. Forward-Bias Safe Operating Area  
Fig. 13. Forward-Bias Safe Operating Area  
@ TC = 25ºC  
@ TC = 70ºC  
-
-
1,000  
1,000  
TJ = 150ºC  
TJ = 150ºC  
TC = 25ºC  
TC = 70ºC  
Single Pulse  
Single Pulse  
25µs  
-
-
100  
100  
100µs  
R
Limit  
R
Limit  
DS(on)  
DS(on)  
100µs  
1ms  
1ms  
-
10  
-
10  
10ms  
10ms  
100ms  
DC  
100ms  
DC  
-
1
-
1
-
-
1
-10  
-100  
- 1,000  
1
- 10  
- 100  
- 1,000  
VDS - Volts  
VDS - Volts  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_48P20P(B7)8-03-09-A  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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