Silicon Junction FETs (Small Signal)
2SK65
Silicon N-Channel Junction FET
For impedance conversion in low frequency
For electret capacitor microphone
unit: mm
2.0±0.2
4.5±0.1
1.0
■ Features
● Diode is connected between gate and source
● Low noise voltage
■ Absolute Maximum Ratings (Ta = 25°C)
Parameter
Drain to Source voltage
Gate to Drain voltage
Drain to Source current
Drain to Gate current
Gate to Source current
Allowable power dissipation
Symbol
VDSO
VGDO
IDSO
Ratings
Unit
V
12
−12
V
0.45±0.05
2
mA
mA
mA
mW
°C
2.54
2
0.8±0.1
IDGO
IGSO
2
1
3
1: Drain
2: Gate
3: Source
2
PD
20
S Type Package
Operating ambient temperature Topr
Storage temperature Tstg
−10 to +70
−20 to +150
°C
■ Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
min
typ
max
Unit
*
Drain to Source cut-off current
IDSS
VDS = 4.5V, VGS = 0, RS = 2.2kΩ ± 1%
VDS = 4.5V, VGS = 0
0.04
0.8
mA
Mutual conductance
Noise figure
gm
300
500
µS
µV
dB
dB
dB
RS = 2.2kΩ ± 1%, f = 1kHz
VDS = 4.5V, RS = 2.2kΩ ± 1%
CG = 10pF, A-curve
NV
4
VDS = 4.5V, RS = 2.2kΩ ± 1%
CG = 10pF, eG = 100mV, f = 70Hz
VDS = 12V, RS = 2.2kΩ ± 1%
CG = 10pF, eG = 100mV, f = 70Hz
VDS = 1V, RS = 2.2kΩ ± 1%
CG = 10pF, eG = 100mV, f = 70Hz
*
GV1
−10
−9.5
−11
*
Voltage gain
GV2
*
GV3
* IDSS rank classification and GV value
Runk
IDSS (mA)
P
0.04 to 0.2
> −13
> −12
< 3
Q
0.15 to 0.8
> −12
> −11
< 3
GV1 (dB)
GV2 (dB)
∆| GV1 − GV2 | (dB)
1
