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IXTH220N055T

型号：

IXTH220N055T

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

195 K

下载PDF手册
Preliminary Technical Information  
TrenchMVTM  
Power MOSFET  
IXTH220N055T  
IXTQ220N055T  
VDSS = 55  
ID25 = 220  
RDS(on) ≤ 4.0 mΩ  
V
A
N-ChannelEnhancementMode  
AvalancheRated  
TO-247 (IXTH)  
Symbol  
Test Conditions  
Maximum Ratings  
G
(TAB)  
D
VDSS  
VDGR  
TJ = 25° C to 175° C  
TJ = 25° C to 175° C; RGS = 1 MΩ  
55  
55  
V
V
S
VGSM  
Transient  
20  
V
TO-3P (IXTQ)  
ID25  
ILRMS  
IDM  
TC = 25° C  
Lead Current Limit, RMS  
TC = 25° C, pulse width limited by TJM  
220  
75  
600  
A
A
A
IAR  
EAS  
TC =25°C  
TC = 25° C  
25  
1.0  
A
J
G
dv/dt  
PD  
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS  
TJ ≤175° C, RG = 5 Ω  
3
V/ns  
D
S
(TAB)  
TC =25°C  
430  
W
G = Gate  
D = Drain  
S = Source  
TAB = Drain  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
Features  
ꢀUltra-low On Resistance  
ꢀUnclamped Inductive Switching (UIS)  
rated  
Md  
Mounting torque  
1.13 / 10 Nm/lb.in.  
ꢀLow package inductance  
- easy to drive and to protect  
ꢀ175 ° C Operating Temperature  
Weight  
TO-3P  
TO-247  
5.5  
6
g
g
Advantages  
ꢀ
Easy to mount  
Space savings  
High power density  
ꢀ
Symbol  
Test Conditions  
Characteristic Values  
ꢀ
(TJ = 25° C unless otherwise specified)  
Min. Typ.  
Max.  
Applications  
Automotive  
- Motor Drives  
- High Side Switch  
- 12VBattery  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
55  
V
V
ꢀ
VDS = VGS, ID = 1 mA  
2.0  
4.0  
VGS  
=
20 V, VDS = 0 V  
200  
nA  
- ABS Systems  
IDSS  
VDS = VDSS  
VGS = 0 V  
5
250  
µA  
µA  
ꢀ
DC/DC Converters and Off-line UPS  
Primary- Side Switch  
High Current Switching  
TJ = 150° C  
ꢀ
RDS(on)  
VGS = 10 V, ID = 25 A, Notes 1, 2  
3.1  
4.0 m Ω  
ꢀ
Applications  
DS99684 (11/06)  
© 2006 IXYS CORPORATION All rights reserved  
IXTH220N055T  
IXTQ220N055T  
Symbol  
TestConditions  
Characteristic Values  
Min. Typ. Max.  
TO-247 AD Outline  
(TJ = 25° C unless otherwise specified)  
gfs  
VDS= 10 V; ID = 60 A, Note 1  
75  
120  
S
Ciss  
Coss  
Crss  
7200  
1270  
285  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
1
2
3
td(on)  
tr  
td(off)  
tf  
Resistive Switching Times  
VGS = 10 V, VDS = 30 V, ID = 25 A  
RG = 5 Ω (External)  
36  
62  
53  
53  
ns  
ns  
ns  
ns  
Terminals: 1 - Gate  
3 - Source  
2 - Drain  
Tab - Drain  
Qg(on)  
Qgs  
158  
42  
nC  
nC  
nC  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Qgd  
46  
RthJC  
RthCH  
0.35 ° C/W  
°C/W  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
0.25  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
Source-Drain Diode  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
Symbol  
Test Conditions  
Characteristic Values  
.780 .800  
.177  
TJ = 25° C unless otherwise specified)  
Min. Typ.  
Max.  
∅P 3.55  
Q
3.65  
.140 .144  
IS  
VGS = 0 V  
220  
A
A
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
ISM  
VSD  
trr  
Pulse width limited by TJM  
IF = 25 A, VGS = 0 V, Note 1  
600  
1.0  
V
TO-3P (IXTQ) Outline  
IF = 25 A, -di/dt = 100 A/µs  
70  
ns  
VR = 25 V, VGS = 0 V  
Notes: 1. Pulse test, t ≤300 µs, duty cycle d ≤ 2 %;  
2. On through-hole packages, RDS(on) Kelvin test contact  
location must be 5 mm or less from the package body.  
Pins: 1 - Gate  
2 - Drain  
3 - Source 4, TAB - Drain  
PRELIMINARYTECHNICALINFORMATION  
The product presented herein is under development. The Technical Specifications  
offered are derived from data gathered during objective characterizations of preliminary  
engineering lots; but also may yet contain some information supplied during a pre-  
production design evaluation. IXYS reserves the right to change limits, test conditions,  
and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
oneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  
6771478B2  
7,005,734B2  
7,063,975B2  
7,071,537  
IXTH220N055T  
IXTQ220N055T  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
220  
200  
180  
160  
140  
120  
100  
80  
320  
280  
240  
200  
160  
120  
80  
V
= 10V  
V
= 10V  
GS  
GS  
9V  
8V  
9V  
8V  
7V  
6V  
7V  
6V  
60  
40  
40  
20  
5V  
5V  
1
0
0
0
0
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0
0.5  
1.5  
2
2.5  
3
3.5  
4
4.5  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 110A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 150ºC  
200  
180  
160  
140  
120  
100  
80  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 10V  
GS  
V
= 10V  
GS  
9V  
8V  
7V  
I
= 220A  
D
6V  
I
= 110A  
D
5V  
60  
40  
20  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 110A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
2.2  
2
140  
120  
100  
80  
External Lead Current Limit for TO-263 (7-Lead)  
T = 175ºC  
J
1.8  
1.6  
1.4  
1.2  
1
External Lead Current Limit for TO-3P, TO-220, & TO-263  
V
= 10V  
15V  
GS  
- - - -  
60  
40  
T = 25ºC  
J
20  
0
0.8  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
40  
80  
120  
160  
200  
240  
280  
320  
ID - Amperes  
TC - Degrees Centigrade  
© 2006 IXYS CORPORATION All rights reserved  
IXTH220N055T  
IXTQ220N055T  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
180  
160  
140  
120  
100  
80  
270  
240  
210  
180  
150  
120  
90  
T
J
= - 40ºC  
25ºC  
150ºC  
60  
T
J
= 150ºC  
40  
60  
25ºC  
-40ºC  
20  
30  
0
0
0
30  
60  
90  
120  
150  
180  
210  
240  
270  
160  
10  
3.5  
0.4  
0
4
4.5  
5
5.5  
6
6.5  
1.3  
40  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
300  
270  
240  
210  
180  
150  
120  
90  
10  
9
8
7
6
5
4
3
2
1
0
V
= 27.5V  
DS  
I
I
= 25A  
D
G
= 10mA  
T
= 150ºC  
J
T
= 25ºC  
J
60  
30  
0
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
1.2  
0
20  
40  
60  
80  
100  
120  
140  
QG - NanoCoulombs  
VSD - Volts  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
10,000  
1,000  
100  
1.00  
0.10  
0.01  
C
iss  
C
oss  
C
rss  
f = 1 MHz  
5
10  
15  
20  
25  
30  
35  
0.0001  
0.001  
0.01  
0.1  
1
VDS - Volts  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXTH220N055T  
IXTQ220N055T  
Fig. 13. Resistive Turn-on  
Rise Time vs. Junction Temperature  
Fig. 14. Resistive Turn-on  
Rise Time vs. Drain Current  
75  
70  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
75  
70  
65  
60  
55  
50  
45  
40  
35  
30  
25  
R
= 5  
Ω
G
V
V
= 10V  
= 30V  
GS  
DS  
T = 25ºC  
J
R
V
V
= 5  
Ω
G
= 10V  
= 30V  
GS  
DS  
I
= 50A  
D
I
= 25A  
D
T = 125ºC  
J
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
25  
30  
35  
40  
45  
50  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
160  
140  
120  
100  
80  
65  
60  
55  
50  
45  
40  
35  
30  
65  
90  
86  
82  
78  
74  
70  
66  
62  
58  
54  
50  
I
= 25A, 50A  
D
t r  
td(on)  
- - - -  
63  
61  
59  
57  
55  
53  
51  
49  
47  
45  
TJ = 125ºC, V = 10V  
GS  
V
= 30V  
DS  
I
= 50A, 25A  
D
I
= 50A, 25A  
D
60  
t f  
R
td(off)  
- - - -  
= 5 , V = 10V  
Ω
GS  
40  
G
V
= 30V  
DS  
20  
25  
35  
45 55  
65  
75  
85  
95 105 115 125  
4
6
8
10  
12  
14  
16  
18  
20  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 18. Resistive Turn-off  
Fig. 17. Resistive Turn-off  
Switching Times vs. Gate Resistance  
Switching Times vs. Drain Current  
64  
62  
60  
58  
56  
54  
52  
50  
48  
46  
84  
80  
76  
72  
68  
64  
60  
56  
52  
48  
190  
170  
150  
130  
110  
90  
260  
230  
200  
170  
140  
110  
80  
TJ = 125ºC  
tf  
td(off)  
- - - -  
T = 125ºC, VGS = 10V  
J
V
DS = 30V  
tf  
R
td(off)  
- - - -  
= 5 , VGS = 10V  
Ω
G
I
= 25A  
D
V
DS = 30V  
I
= 50A  
D
70  
T = 25ºC  
J
50  
50  
24  
28  
32  
36  
40  
44  
48  
4
6
8
10  
12  
14  
16  
18  
20  
RG - Ohms  
ID - Amperes  
IXYS REF: T_220N055T (5V) 8-29-06-A.xls  
© 2006 IXYS CORPORATION All rights reserved  
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