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IXTH1N250

型号：

IXTH1N250

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

5 页

PDF大小：

113 K

下载PDF手册
High Voltage  
Power MOSFET  
VDSS = 2500V  
ID25 = 1.5A  
RDS(on) ≤ 40Ω  
IXTH1N250  
N-Channel Enhancement Mode  
Fast Intrinsic Diode  
TO-247  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
2500  
2500  
V
V
VDGR  
G
D
Tab  
S
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
G = Gate  
D
= Drain  
S = Source  
Tab = Drain  
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
1.5  
6
A
A
PD  
TC = 25°C  
250  
W
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
°C  
°C  
°C  
Features  
TL  
TSOLD  
1.6mm (0.062 in.) From Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
z
International Standard Package  
Molding Epoxies Weet UL 94 V-0  
Flammability Classification  
Fast Intrinsic Diode  
z
Md  
Mounting Torque  
1.13 / 10  
Nm/lb.in.  
g
z
z
Weight  
6
Low Package Inductance  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
z
Easy to Mount  
Space Savings  
High Power Density  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
2500  
2.0  
Typ.  
Max.  
z
z
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = ±20V, VDS = 0V  
VDS = 0.8 • VDSS, VGS = 0V  
V
V
4.0  
±100 nA  
Applications  
IDSS  
25 μA  
μA  
z
High Voltage Power Supplies  
Capacitor Discharge  
Pulse Circuits  
TJ = 125°C  
25  
z
z
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
40  
Ω
DS99761C(04/12)  
© 2012 IXYS CORPORATION, All Rights Reserved  
IXTH1N250  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 (IXTH) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 50V, ID = 0.5A, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
1.0  
1.8  
mS  
Ciss  
Coss  
Crss  
1660  
77  
pF  
pF  
pF  
∅ P  
1
2
3
23  
td(on)  
tr  
td(off)  
tf  
69  
25  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 1A  
RG = 5Ω (External)  
132  
39  
e
Terminals: 1 - Gate  
2 - Drain  
3 - Source  
Qg(on)  
Qgs  
41  
8
nC  
nC  
nC  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
VGS = 10V, VDS = 600V, ID = 0.5A  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Qgd  
16  
RthJC  
RthCS  
0.50 °C/W  
°C/W  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
0.21  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
Source-Drain Diode  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
1.5  
6
∅P 3.55  
Q
3.65  
.140 .144  
5.89  
6.40 0.232 0.252  
IS  
VGS = 0V  
A
A
R
4.32  
5.49 .170 .216  
ISM  
VSD  
trr  
Repetitive, Pulse Width Limited by TJM  
IF = 1A, VGS = 0V, Note 1  
IF = 1A, -di/dt = 100A/μs, VR = 200V  
1.5  
V
2.5  
μs  
Note  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
*Additional provisions for lead to lead voltage isolation are required at VDS > 1200V.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTH1N250  
Fig. 2. Output Characteristics @ TJ = 125ºC  
Fig. 1. Output Characteristics @ TJ = @ 25ºC  
1
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
1
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
VGS = 10V  
VGS = 10V  
5V  
5V  
4V  
4V  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 0.5A Value vs.  
Junction Temperature  
Fig. 3. RDS(on) Normalized to ID = 0.5A Value vs.  
Drain Current  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
VGS = 10V  
VGS = 10V  
TJ = 125ºC  
I D = 1A  
I D = 0.5A  
TJ = 25ºC  
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
-50  
-25  
0
25  
50  
75  
100  
125  
150  
ID - Amperes  
TJ - Degrees Centigrade  
Fig. 5. Maximum Drain Current vs.  
Case Temperature  
Fig. 6. Input Admittance  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
1.6  
1.4  
1.2  
1
0.8  
0.6  
0.4  
0.2  
0
TJ = 125ºC  
25ºC  
- 40ºC  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
2.8  
3.0  
3.2  
3.4  
3.6  
3.8  
4.0  
4.2  
4.4  
4.6  
4.8  
5.0  
TC - Degrees Centigrade  
VGS - Volts  
© 2012 IXYS CORPORATION, All Rights Reserved  
IXTH1N250  
Fig. 8. Forward Voltage Drop of  
Fig. 7. Transconductance  
Intrinsic Diode  
3
2.5  
2
3
2.5  
2
TJ = - 40ºC  
25ºC  
125ºC  
1.5  
1
1.5  
1
TJ = 125ºC  
TJ = 25ºC  
0.5  
0
0.5  
0
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
ID - Amperes  
VSD - Volts  
Fig. 9. Gate Charge  
Fig. 10. Capacitance  
10  
9
8
7
6
5
4
3
2
1
0
10,000  
1,000  
100  
= 1MHz  
f
VDS = 600V  
D = 500mA  
I G = 10mA  
I
C
iss  
C
oss  
C
rss  
10  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
0
5
10  
15  
20  
25  
30  
35  
40  
VDS - Volts  
QG - NanoCoulombs  
Fig. 11. Forward-Bias Safe Operating Area  
@ TC = 25ºC  
Fig. 12. Forward-Bias Safe Operating Area  
@ TC = 75ºC  
10  
10  
RDS(on) Limit  
RDS(on) Limit  
25µs  
25µs  
100µs  
100µs  
1
1
1ms  
1ms  
10ms  
10ms  
100ms  
0.1  
0.01  
0.1  
0.01  
100ms  
DC  
TJ = 150ºC  
DC  
TJ = 150ºC  
TC = 25ºC  
TC = 75ºC  
Single Pulse  
Single Pulse  
100  
1,000  
10,000  
100  
1,000  
10,000  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTH1N250  
Fig. 13. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2012 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_1N250 (5P)10-25-10-D  
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