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IXTQ22N50P

型号：

IXTQ22N50P

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

7 页

PDF大小：

196 K

下载PDF手册
PolarTM  
Power MOSFETs  
N-Channel Enhancement Mode  
Avalanche Rated  
VDSS = 500V  
ID25 = 22A  
RDS(on) ≤ 270mΩ  
trr(typ) = 400ns  
IXTV22N50P  
IXTV22N50PS  
IXTQ22N50P  
IXTH22N50P  
Fast Intrinsic Diode  
PLUS220 (IXTV)  
TO-3P (IXTQ)  
PLUS220SMD (IXTV_S)  
G
D
G
D
S
G
S
S
D (TAB)  
D (TAB)  
D (TAB)  
TO-247 (IXTH)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
500  
V
V
VDGR  
TJ = 25°C to 150°C, RGS = 1MΩ  
500  
VGSS  
VGSM  
Continuous  
Transient  
± 30  
± 40  
V
V
D (TAB)  
ID25  
IDM  
TC = 25°C  
22  
50  
A
A
TC = 25°C, Pulse Width Limited by TJM  
G = Gate  
D
= Drain  
S = Source TAB = Drain  
IA  
EAS  
TC = 25°C  
TC = 25°C  
22  
750  
A
mJ  
dV/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
10  
350  
V/ns  
W
Features  
z International Standard Packages  
z Avalanche Rated  
TJ  
-55 ... +150  
150  
°C  
TJM  
Tstg  
°C  
z Fast Intrinsic Diode  
z Low Package Inductance  
-55 ... +150  
°C  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
Advantages  
z High Power Density  
z Easy to Mount  
Md  
Mounting Torque (TO-247 & TO-3P)  
Mounting Force (PLUS220)  
1.13/10  
Nm/lb.in.  
N/lb.  
FC  
11..65/2.5..14.6  
z Space Savings  
Weight  
PLUS220 types  
TO-3P  
TO-247  
4.0  
5.5  
6.0  
g
g
g
Applications  
z Switched-Mode and Resonant-Mode  
Power Supplies  
Symbol  
Test Conditions  
Characteristic Values  
z DC-DC Converters  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
500  
3.0  
Typ.  
Max.  
z Laser Drivers  
z AC and DC Motor Drives  
z Robotics and Servo Controls  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = ± 30V, VDS = 0V  
VDS = VDSS, VGS= 0V  
V
V
5.5  
± 100 nA  
μA  
IDSS  
5
TJ = 125°C  
50 μA  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
270 mΩ  
DS99351G(07/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXTV22N50P IXTV22N50PS  
IXTQ22N50P IXTH22N50P  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 20V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
12  
20  
S
Ciss  
Coss  
Crss  
2880  
310  
29  
pF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
22  
25  
72  
21  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 10Ω (External)  
Qg(on)  
Qgs  
50  
16  
18  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
(TO-247, PLUS220 & TO-3P)  
Qgd  
RthJC  
RthCS  
0.35 °C/W  
°C/W  
0.25  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
22  
A
A
ISM  
VSD  
trr  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
88  
1.5  
V
400  
ns  
IF = 22A, -di/dt = 100A/μs  
VR = 100V, VGS = 0V  
Note 1. Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTV22N50P IXTV22N50PS  
IXTQ22N50P IXTH22N50P  
PLUS220SMD (IXTV_S) Outline  
PLUS220 (IXTV) Outline  
A
E
E1  
L2  
E
A
A1  
E1  
E1  
L2  
E1  
A1  
A
A1  
A2  
A3  
b
c
D
D1  
E
E1  
e
D1  
D
D
A3  
L4  
L3  
L3  
L1  
L
L1  
L
2X b  
c
e
A2  
c
3X b  
L
A2  
2X e  
L1  
L2  
L3  
L4  
Terminals: 1 - Gate  
3 - Source  
2 - Drain  
TAB - Drain  
Terminals: 1 - Gate  
3 - Source  
2 - Drain  
TAB - Drain  
A
A1  
A2  
b
TO-3P (IXTQ) Outline  
c
D
D1  
E
E1  
e
L
L1  
L2  
L3  
Pins: 1 - Gate  
2 - Drain  
3 - Source 4, TAB - Drain  
TO-247 (IXTH) Outline  
Dim. Millimeter  
Min. Max.  
Inches  
Min. Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
∅ P  
1
2
3
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
∅P 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
R
4.32  
5.49 .170 .216  
Terminals: 1 - Gate  
2 - Drain  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXTV22N50P IXTV22N50PS  
IXTQ22N50P IXTH22N50P  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
Fig. 1. Output Characteristics  
@ 25ºC  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
22  
20  
18  
16  
14  
12  
10  
8
VGS = 10V  
VGS = 10V  
8V  
8V  
7V  
7V  
6V  
6V  
6
4
5V  
5V  
2
0
0
0
1
2
3
4
5
6
7
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 3. Output Characteristics  
@ 125ºC  
Fig. 4. RDS(on) Normalized to ID = 11A Value  
vs. Junction Temperature  
22  
20  
18  
16  
14  
12  
10  
8
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
VGS = 10V  
7V  
VGS = 10V  
6V  
I D = 22A  
I D = 11A  
6
5V  
4
2
0
0
2
4
6
8
10  
12  
14  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 11A Value  
vs. Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
24  
20  
16  
12  
8
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
VGS = 10V  
TJ = 125ºC  
TJ = 25ºC  
4
0
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
ID - Amperes  
TC - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTV22N50P IXTV22N50PS  
IXTQ22N50P IXTH22N50P  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
40  
35  
30  
25  
20  
15  
10  
5
40  
35  
30  
25  
20  
15  
10  
5
TJ = - 40ºC  
25ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
125ºC  
0
0
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
1.2  
40  
0
4
8
12  
16  
20  
24  
28  
32  
36  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
80  
70  
60  
50  
40  
30  
20  
10  
0
VDS = 250V  
I
I
D = 11A  
G = 10mA  
TJ = 125ºC  
TJ = 25ºC  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
10,000  
1,000  
100  
100.0  
10.0  
1.0  
= 1 MHz  
f
RDS(on) Limit  
25µs  
C
100µs  
iss  
C
oss  
rss  
1ms  
TJ = 150ºC  
C = 25ºC  
Single Pulse  
T
10ms  
C
DC  
100ms  
10  
0.1  
0
5
10  
15  
20  
25  
30  
35  
10  
100  
1000  
VDS - Volts  
VDS - Volts  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXTV22N50P IXTV22N50PS  
IXTQ22N50P IXTH22N50P  
Fig. 13. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: F_22N50P(63)07-22-09-B  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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