找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

2SK3057-AZ

型号:

2SK3057-AZ

品牌:

NEC[ NEC ]

页数:

8 页

PDF大小:

65 K

DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3057  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
DESCRIPTION  
ORDERING INFORMATION  
PART NUMBER  
The 2SK3057 product is N-Channel MOS Field Effect  
Transistor designed for high current switching application.  
PACKAGE  
2SK3057  
Isolated TO-220  
FEATURES  
Low on-state resistance  
(Isolated TO-220)  
RDS(on)1 = 17 mMAX. (VGS = 10 V, ID = 23 A)  
RDS(on)2 = 27 mMAX. (VGS = 4 V, ID = 23 A)  
Low Ciss: Ciss = 2100 pF TYP.  
Built-in gate protection diode  
Isolated TO-220 package  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC) (TC = 25°C)  
Drain Current (pulse) Note1  
VDSS  
VGSS(AC)  
VGSS(DC)  
ID(DC)  
ID(pulse)  
PT  
60  
±20  
V
V
+20, –10  
±45  
V
A
±150  
30  
A
Total Power Dissipation (TC = 25°C)  
Total Power Dissipation (TA = 25°C)  
Channel Temperature  
W
W
°C  
°C  
A
PT  
2.0  
Tch  
150  
Storage Temperature  
Tstg  
–55 to +150  
22.5  
Single Avalanche Current Note2  
Single Avalanche Energy Note2  
IAS  
EAS  
50.6  
mJ  
Notes 1. PW 10 µs, Duty Cycle 1%  
2. Starting Tch = 25°C, VDD = 30 V, RG = 25 , VGS = 20 0 V  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No.  
Date Published April 2001 NS CP(K)  
Printed in Japan  
D13096EJ2V0DS00 (2nd edition)  
1998, 2001  
©
The mark shows major revised points.  
2SK3057  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
CHARACTERISTICS  
Zero Gate Voltage Drain Current  
Gate Leakage Current  
SYMBOL  
IDSS  
TEST CONDITIONS  
VDS = 60 V, VGS = 0 V  
MIN. TYP. MAX. UNIT  
10  
±10  
2.0  
µA  
µA  
V
IGSS  
VGS = ±20 V, VDS = 0 V  
VDS = 10 V, ID = 1 mA  
VDS = 10 V, ID = 23 A  
VGS = 10 V, ID = 23 A  
VGS = 4 V, ID = 23 A  
VDS = 10 V  
Gate Cut-off Voltage  
VGS(off)  
| yfs |  
RDS(on)1  
RDS(on)2  
Ciss  
1.0  
13  
1.6  
42  
Forward Transfer Admittance  
Drain to Source On-state Resistance  
S
12  
17  
27  
mΩ  
mΩ  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
V
17  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-on Delay Time  
Rise Time  
2100  
550  
220  
35  
Coss  
VGS = 0 V  
Crss  
f = 1 MHz  
td(on)  
VDD = 30 V, ID = 23 A  
VGS = 10 V  
tr  
410  
120  
200  
45  
Turn-off Delay Time  
Fall Time  
td(off)  
tf  
RG = 10 Ω  
Total Gate Charge  
Gate to Source Charge  
Gate to Drain Charge  
Body Diode Forward Voltage  
QG  
VDD = 48 V  
QGS  
VGS = 10 V  
7.0  
13  
QGD  
ID = 45 A  
VF(S-D)  
IF = 45 A, VGS = 0 V  
1.0  
Reverse Recovery Time  
Reverse Recovery Charge  
trr  
IF = 45 A, VGS = 0 V  
60  
ns  
Qrr  
di/dt = 100 A/µs  
100  
nC  
TEST CIRCUIT 1 AVALANCHE CAPABILITY  
TEST CIRCUIT 2 SWITCHING TIME  
D.U.T.  
L
D.U.T.  
V
GS  
R
L
R
G
= 25 Ω  
90%  
V
GS  
Wave Form  
10%  
10%  
0
R
G
PG.  
PG.  
50 Ω  
V
DD  
R = 10 Ω  
G
V
DD  
V
GS = 200V  
I
D
90%  
90%  
10%  
I
D
V
0
GS  
BVDSS  
I
D
0
Wave Form  
I
AS  
V
DS  
τ
I
D
t
d(on)  
t
r
t
d(off)  
tf  
V
DD  
t
on  
toff  
τ = 1 µs  
Duty Cycle 1%  
Starting Tch  
TEST CIRCUIT 3 GATE CHARGE  
D.U.T.  
= 2 mA  
I
G
RL  
PG.  
50 Ω  
V
DD  
2
Data Sheet D13096EJ2V0DS  
2SK3057  
TYPICAL CHARACTERISTICS (TA = 25°C)  
DERATING FACTOR OF FORWARD BIAS  
SAFE OPERATING AREA  
TOTAL POWER DISSIPATION vs.  
CASE TEMPERATURE  
120  
100  
80  
70  
60  
50  
40  
30  
20  
10  
0
60  
40  
20  
0
0
20 40 60 80 100 120 140 160  
- Case Temperature - °C  
0
20 40 60 80 100 120 140 160  
- Case Temperature - °C  
T
C
T
C
FORWARD BIAS SAFE OPERATING AREA  
1000  
PW  
I
D(pulse  
)
=
10  
µ
s
100  
10  
100  
10  
Limited  
= 10 V)  
I
D(DC)  
µ
ms  
s
RDS(on)  
(at V  
GS  
1
100  
ms  
ms  
DC  
1
T
C
= 25˚C  
Single Pulse  
0.1  
0.1  
1
10  
100  
V
DS - Drain to Source Voltage - V  
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH  
1000  
100  
10  
1
R
th(ch-A)= 62.5˚C/W  
th(ch-C)= 4.17˚C/W  
R
0.1  
0.01  
Single Pulse  
100 1000  
0.001  
100  
10  
µ
µ
1 m  
10 m  
100 m  
1
10  
PW - Pulse Width - s  
3
Data Sheet D13096EJ2V0DS  
2SK3057  
DRAIN CURRENT vs.  
DRAIN TO SOURCE VOLTAGE  
FORWARD TRANSFER CHARACTERISTICS  
100  
10  
1
Pulsed  
100  
80  
60  
40  
20  
0
V
GS = 10 V  
T
A
= 125˚C  
75˚C  
25˚C  
25˚C  
V
GS = 4 V  
0.1  
0
Pulsed  
V
DS = 10V  
2
4
0
3
1
0
1
2
3
4 5  
V
DS - Drain to Source Voltage - V  
V
GS - Gate to Source Voltage - V  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
GATE TO SOURCE VOLTAGE  
FORWARD TRANSFER ADMITTANCE vs.  
DRAIN CURRENT  
100  
10  
1
Pulsed  
70  
T
A
= 25˚C  
25˚C  
60  
50  
40  
30  
20  
10  
0
75˚C  
125˚C  
V
DS =10V  
I
D
= 30A  
20  
Pulsed  
0.1  
0.1  
1.0  
10  
100  
0
10  
30  
I
D
- Drain Current - A  
V
GS - Gate to Source Voltage - V  
DRAIN TO SOURCE ON-STATE  
RESISTANCE vs. DRAIN CURRENT  
GATE TO SOURCE CUT-OFF VOLTAGE vs.  
CHANNEL TEMPERATURE  
80  
60  
40  
20  
0
Pulsed  
V
DS = 10V  
= 1mA  
I
D
2.0  
1.5  
1.0  
V
GS = 4V  
0.5  
0
V
GS =10V  
0.1  
1
10  
- Drain Current - A  
100  
50  
0
50  
100  
150  
T
ch - Channel Temperature - ˚C  
I
D
4
Data Sheet D13096EJ2V0DS  
2SK3057  
SOURCE TO DRAIN DIODE FORWARD VOLTAGE  
1000  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
CHANNEL TEMPERATURE  
Pulsed  
40  
30  
20  
V
GS = 4 V  
100  
10  
1
V
GS = 10 V  
V
GS = 10 V  
V
GS = 0 V  
10  
0
I
D
= 20A  
150  
ch - Channel Temperature - ˚C  
0.1  
0
1.0  
- Source to Drain Voltage - V  
1.5  
0.5  
0
50  
100  
50  
V
SD  
T
CAPACITANCE vs. DRAIN TO  
SOURCE VOLTAGE  
SWITCHING CHARACTERISTICS  
100  
10  
V
DD = 30V  
GS = 10V  
= 10Ω  
V
GS = 0 V  
V
f = 1MHz  
10000  
1000  
R
G
t
r
t
f
Ciss  
t
d(off)  
100  
1
t
d(on)  
Coss  
10  
0
C
rss  
0.1  
0.1  
1
10  
100  
0.1  
1
10  
100  
V
DS - Drain to Source Voltage - V  
I
D
- Drain Current - A  
REVERSE RECOVERY TIME vs.  
DRAIN CURRENT  
DYNAMIC INPUT/OUTPUT CHARACTERISTICS  
80  
60  
40  
20  
0
1000  
100  
16  
di/dt=100A/µs  
ID = 45A  
V
GS =0 V  
14  
12  
10  
8
V
DD = 12 V  
30 V  
48 V  
6
10  
1
4
2
0
0
20  
40  
60  
80  
0.1  
1
10  
100  
Q
G
- Gate Charge - nC  
I
F
- Drain Current - A  
5
Data Sheet D13096EJ2V0DS  
2SK3057  
SINGLE AVALANCHE CURRENT vs.  
INDUCTIVE LOAD  
SINGLE AVALANCHE ENERGY  
DERATING FACTOR  
100  
10  
160  
140  
120  
100  
80  
V
R
V
I
DD = 30 V  
= 25 Ω  
GS = 20 0 V  
AS 22.5 A  
G
I
AS = 22.5 A  
EAS  
=
50.6 mJ  
60  
1.0  
0.1  
40  
R
G
= 25 Ω  
V
DD = 30 V  
20  
V
GS = 20 0 V  
Starting Tch = 25°C  
0
25  
50  
75  
100  
125  
150  
10  
µ
100  
µ
1m  
10m  
Starting Tch - Starting Channel Temperature - ˚C  
L - Inductive Load - H  
6
Data Sheet D13096EJ2V0DS  
2SK3057  
PACKAGE DRAWING (Unit: mm)  
Isolated TO-220 (MP-45F)  
10.0  
±
0.3  
4.5 ± 0.2  
φ
3.2 ± 0.2  
2.7  
± 0.2  
EQUIVALENT CIRCUIT  
Drain (D)  
Body  
Diode  
Gate (G)  
Gate  
Protection  
Diode  
0.7  
±
0.1  
1.3  
±
0.2  
2.5  
0.65 ± 0.1  
± 0.1  
Source (S)  
1.5  
±
0.2  
2.54  
2.54  
1.Gate  
2.Drain  
3.Source  
1
2 3  
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When  
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated  
voltage may be applied to this device.  
7
Data Sheet D13096EJ2V0DS  
2SK3057  
The information in this document is current as of April, 2001. The information is subject to change  
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data  
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products  
and/or types are available in every country. Please check with an NEC sales representative for  
availability and additional information.  
No part of this document may be copied or reproduced in any form or by any means without prior  
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.  
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of  
third parties by or arising from the use of NEC semiconductor products listed in this document or any other  
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any  
patents, copyrights or other intellectual property rights of NEC or others.  
Descriptions of circuits, software and other related information in this document are provided for illustrative  
purposes in semiconductor product operation and application examples. The incorporation of these  
circuits, software and information in the design of customer's equipment shall be done under the full  
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third  
parties arising from the use of these circuits, software and information.  
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers  
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize  
risks of damage to property or injury (including death) to persons arising from defects in NEC  
semiconductor products, customers must incorporate sufficient safety measures in their design, such as  
redundancy, fire-containment, and anti-failure features.  
NEC semiconductor products are classified into the following three quality grades:  
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products  
developed based on a customer-designated "quality assurance program" for a specific application. The  
recommended applications of a semiconductor product depend on its quality grade, as indicated below.  
Customers must check the quality grade of each semiconductor product before using it in a particular  
application.  
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio  
and visual equipment, home electronic appliances, machine tools, personal electronic equipment  
and industrial robots  
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems and medical equipment for life support, etc.  
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's  
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not  
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness  
to support a given application.  
(Note)  
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.  
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for  
NEC (as defined above).  
M8E 00. 4  
厂商 型号 描述 页数 下载

PANASONIC

2SK0065 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス - 小信号FET - 接合形FET ] 3 页

ETC

2SK0065P 晶体管| JFET | N沟道| 12V V( BR ) DSS | 40uA的我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

ETC

2SK0065Q 晶体管| JFET | N沟道| 12V V( BR ) DSS | 150UA我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

PANASONIC

2SK0123 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

2SK0123(2SK123) 小信号器件 - 小信号场效应管 - 场效应管结\n[ Small-signal device - Small-signal FETs - Junction FETs ] 3 页

PANASONIC

2SK0198 对于低频放大[ For Low-Frequency Amplification ] 3 页

ETC

2SK0198(2SK198) 2SK0198 ( 2SK198 ) - N沟道结型场效应管\n[ 2SK0198 (2SK198) - N-Channel Junction FET ] 3 页

PANASONIC

2SK0198P [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

PANASONIC

2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

PDF索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

0.215790s