IXTQ 150N06P
Symbol
gfs
Test Conditions
Characteristic Values
TO-3P (IXTQ) Outline
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
VDS= 10 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
32
50
S
Ciss
Coss
Crss
3000
2100
850
pF
pF
pF
td(on)
tr
td(off)
tf
27
53
66
45
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25
RG = 10 Ω (External)
Qg(on)
Qgs
118
30
nC
nC
nC
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
55
RthJC
RthCS
0.31K/W
K/W
0.21
Source-Drain Diode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol
IS
Test Conditions
Min.
Typ.
Max.
VGS = 0 V
Repetitive
150
A
A
V
ISM
280
1.5
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
trr
QRM
IF = 25 A, -di/dt = 100 A/μs
VR = 30 V, VGS = 0 V
120
2.0
ns
μC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,727,585
6,534,343
6,583,505
6,710,405B2 6,759,692
6,710,463 6,771,478 B2
