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2SK3210(S)-(1)

型号:

2SK3210(S)-(1)

品牌:

HITACHI[ HITACHI SEMICONDUCTOR ]

页数:

7 页

PDF大小:

35 K

2SK3210(L), 2SK3210(S)  
Silicon N Channel MOS FET  
High Speed Power Switching  
ADE-208-760A (Z)  
Target Specification 2nd. Edition  
Mar. 2001  
Features  
Low on-resistance  
RDS = 40mtyp.  
High speed switching  
4V gate drive device can be driven from 5V source  
Outline  
LDPAK  
4
4
D
1
2
3
1
G
2
3
1. Gate  
2. Drain  
3. Source  
4. Drain  
S
2SK3210(L),2SK3210(S)  
Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
VDSS  
Ratings  
150  
Unit  
V
Drain to source voltage  
Gate to source voltage  
Drain current  
VGSS  
±20  
V
ID  
30  
A
1
Drain peak current  
ID(pulse)  
*
120  
A
Body-drain diode reverse drain current IDR  
30  
A
Avalanche current  
Avalanche energy  
Channel dissipation  
Channel temperature  
Storage temperature  
IAP*3  
30  
A
EAR*3  
Pch*2  
Tch  
67  
mJ  
W
°C  
°C  
100  
150  
Tstg  
–55 to +150  
Note: 1. PW 10µs, duty cycle 1 %  
2. Value at Tc = 25°C  
3. Value at Tch = 25°C, Rg 50Ω  
2
2SK3210(L),2SK3210(S)  
Electrical Characteristics (Ta = 25°C)  
Item  
Symbol  
Min  
150  
±20  
Typ  
Max  
Unit Test Conditions  
Drain to source breakdown voltage V(BR)DSS  
Gate to source breakdown voltage V(BR)GSS  
V
ID = 10mA, VGS = 0  
IG = ±100µA, VDS = 0  
VGS = ±16V, VDS = 0  
VDS = 150 V, VGS = 0  
ID = 1mA, VDS = 10V  
ID = 15A, VGS = 10V*4  
ID = 15A, VGS = 4V*4  
ID = 15A, VDS = 10V*4  
VDS = 10V  
V
Gate to source leak current  
Zero gate voltege drain current  
Gate to source cutoff voltage  
Static drain to source on state  
resistance  
IGSS  
±10  
10  
2.5  
45  
63  
µA  
µA  
V
IDSS  
VGS(off)  
RDS(on)  
RDS(on)  
|yfs|  
1.0  
40  
mΩ  
mΩ  
S
45  
Forward transfer admittance  
Input capacitance  
18  
30  
Ciss  
Coss  
Crss  
td(on)  
tr  
2600  
820  
350  
25  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
V
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
VGS = 0  
f = 1MHz  
ID = 15A, VGS = 10V  
RL = 2Ω  
Rise time  
180  
600  
280  
0.91  
110  
Turn-off delay time  
td(off)  
tf  
Fall time  
Body–drain diode forward voltage VDF  
IF = 30A, VGS = 0  
Body–drain diode reverse recovery trr  
time  
ns  
IF = 30A, VGS = 0  
diF/ dt = 50A/µs  
Note: 4. Pulse test  
3
2SK3210(L),2SK3210(S)  
Package Dimensions  
As of January, 2001  
Unit: mm  
4.44 ± 0.2  
1.3 ± 0.15  
10.2 ± 0.3  
2.59 ± 0.2  
1.2 ± 0.2  
1.27 ± 0.2  
+ 0.2  
– 0.1  
0.86  
0.76 ± 0.1  
2.54 ± 0.5  
0.4 ± 0.1  
2.54 ± 0.5  
Hitachi Code  
JEDEC  
LDPAK (L)  
EIAJ  
Mass (reference value)  
1.4 g  
4
2SK3210(L),2SK3210(S)  
As of January, 2001  
Unit: mm  
4.44 ± 0.2  
7.8  
6.6  
10.2 ± 0.3  
1.3 ± 0.15  
+ 0.2  
– 0.1  
0.1  
2.2  
1.27 ± 0.2  
0.4 ± 0.1  
+ 0.2  
1.2 ± 0.2  
2.54 ± 0.5  
0.86  
– 0.1  
2.54 ± 0.5  
Hitachi Code  
LDPAK (S)-(1)  
JEDEC  
EIAJ  
Mass (reference value)  
1.3 g  
5
2SK3210(L),2SK3210(S)  
As of January, 2001  
Unit: mm  
4.44 ± 0.2  
7.8  
6.6  
10.2 ± 0.3  
1.3 ± 0.2  
+ 0.2  
– 0.1  
0.1  
2.2  
1.27 ± 0.2  
0.4 ± 0.1  
+ 0.2  
– 0.1  
1.2 ± 0.2  
0.86  
2.54 ± 0.5  
2.54 ± 0.5  
Hitachi Code  
JEDEC  
LDPAK (S)-(2)  
EIAJ  
Mass (reference value)  
1.35 g  
6
2SK3210(L),2SK3210(S)  
Cautions  
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,  
copyright, trademark, or other intellectual property rights for information contained in this document.  
Hitachi bears no responsibility for problems that may arise with third party’s rights, including  
intellectual property rights, in connection with use of the information contained in this document.  
2. Products and product specifications may be subject to change without notice. Confirm that you have  
received the latest product standards or specifications before final design, purchase or use.  
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,  
contact Hitachi’s sales office before using the product in an application that demands especially high  
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk  
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,  
traffic, safety equipment or medical equipment for life support.  
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly  
for maximum rating, operating supply voltage range, heat radiation characteristics, installation  
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used  
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable  
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-  
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other  
consequential damage due to operation of the Hitachi product.  
5. This product is not designed to be radiation resistant.  
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without  
written approval from Hitachi.  
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor  
products.  
Hitachi, Ltd.  
Semiconductor & Integrated Circuits.  
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109  
URL  
NorthAmerica  
Europe  
Asia  
: http://semiconductor.hitachi.com/  
: http://www.hitachi-eu.com/hel/ecg  
: http://sicapac.hitachi-asia.com  
Japan  
: http://www.hitachi.co.jp/Sicd/indx.htm  
For further information write to:  
Hitachi Semiconductor  
(America) Inc.  
179 East Tasman Drive, Dornacher Straβe 3  
Hitachi Europe GmbH  
Electronic Components Group  
Hitachi Asia Ltd.  
Hitachi Tower  
16 Collyer Quay #20-00,  
Singapore 049318  
Hitachi Asia (Hong Kong) Ltd.  
Group III (Electronic Components)  
7/F., North Tower,  
San Jose,CA 95134  
D-85622 Feldkirchen, Munich  
World Finance Centre,  
Tel: <1> (408) 433-1990 Germany  
Fax: <1>(408) 433-0223 Tel: <49> (89) 9 9180-0  
Fax: <49> (89) 9 29 30 00  
Tel : <65>-538-6533/538-8577  
Fax : <65>-538-6933/538-3877  
URL : http://www.hitachi.com.sg  
Harbour City, Canton Road  
Tsim Sha Tsui, Kowloon,  
Hong Kong  
Tel : <852>-(2)-735-9218  
Fax : <852>-(2)-730-0281  
URL : http://www.hitachi.com.hk  
Hitachi Europe Ltd.  
Electronic Components Group.  
Whitebrook Park  
Lower Cookham Road  
Maidenhead  
Hitachi Asia Ltd.  
(Taipei Branch Office)  
4/F, No. 167, Tun Hwa North Road,  
Hung-Kuo Building,  
Taipei (105), Taiwan  
Berkshire SL6 8YA, United Kingdom  
Tel: <44> (1628) 585000  
Fax: <44> (1628) 585160  
Tel : <886>-(2)-2718-3666  
Fax : <886>-(2)-2718-8180  
Telex : 23222 HAS-TP  
URL : http://www.hitachi.com.tw  
Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.  
Colophon 2.0  
7
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