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IXTH300N04T2

型号：

IXTH300N04T2

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

160 K

下载PDF手册
Preliminary Technical Information  
TrenchT2TM Power  
MOSFET  
VDSS = 40V  
ID25 = 300A  
RDS(on) ≤ 2.5mΩ  
IXTH300N04T2  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-247  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
40  
40  
V
V
G
VDGR  
(TAB)  
D
S
VGSM  
Transient  
± 20  
V
ID25  
ILRMS  
IDM  
TC = 25°C  
300  
160  
900  
A
A
A
G = Gate  
S = Source  
D
= Drain  
Lead Current Limit, RMS  
TC = 25°C, pulse width limited by TJM  
TAB = Drain  
IA  
TC = 25°C  
TC = 25°C  
100  
600  
A
Features  
EAS  
mJ  
z International standard package  
z 175°C Operating Temperature  
z High current handling capability  
z Avalanche Rated  
PD  
TC = 25°C  
480  
W
TJ  
-55 ... +175  
175  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +175  
z
Low RDS(on)  
TL  
Tsold  
1.6mm (0.062in.) from case for 10s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
Advantages  
Md  
Mounting torque  
1.13 / 10  
Nm/lb.in.  
z
Easy to mount  
Space savings  
High power density  
Weight  
6
g
z
z
Applications  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
• Synchronous Buck Converters  
• High Current Switching Power  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = ± 20V, VDS = 0V  
40  
V
V
Supplies  
2.0  
4.0  
• Battery Powered Electric Motors  
±200 nA  
μA  
• Resonant-mode power supplies  
• Electronics Ballast Application  
• Class D Audio Amplifiers  
IDSS  
VDS = VDSS  
VGS = 0V  
5
TJ = 150°C  
150 μA  
2.5 mΩ  
RDS(on)  
VGS = 10V, ID = 50A, Notes 1, 2  
© 2008 IXYS CORPORATION, All rights reserved  
DS100079(11/08)  
IXTH300N04T2  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
TO-247 (IXTH) Outline  
(TJ = 25°C, unless otherwise specified)  
gfs  
VDS = 10V, ID = 60A, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
55  
94  
S
Ciss  
Coss  
Crss  
10.7  
1630  
263  
nF  
pF  
pF  
∅ P  
1
2
3
td(on)  
tr  
td(off)  
tf  
22  
17  
32  
13  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 100A  
e
RG = 2Ω (External)  
Terminals: 1 - Gate  
2 - Drain  
Qg(on)  
Qgs  
145  
44  
nC  
nC  
nC  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Qgd  
36  
RthJC  
RthCH  
0.31 °C/W  
°C/W  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
0.21  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
Source-Drain Diode  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
∅P 3.55  
Q
3.65  
.140 .144  
5.89  
6.40 0.232 0.252  
IS  
VGS = 0V  
300  
A
A
V
R
4.32  
5.49 .170 .216  
ISM  
VSD  
Repetitive, Pulse width limited by TJM  
IF = 100A, VGS = 0V, Note 1  
IF = 150A, VGS = 0V  
1000  
1.3  
trr  
53  
1.8  
ns  
A
IRM  
QRM  
-di/dt = 100A/μs  
VR = 20V  
47.7  
nC  
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTH300N04T2  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
300  
275  
250  
225  
200  
175  
150  
125  
100  
75  
350  
300  
250  
200  
150  
100  
50  
VGS = 15V  
VGS = 15V  
10V  
9V  
8V  
10V  
9V  
8V  
7V  
6V  
7V  
6V  
50  
5V  
5V  
0.8  
25  
0
0
0.0  
0.4  
1.2  
1.6  
2.0  
2.4  
0.0  
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
VDS - Volts  
VDS - Volts  
Fig. 3. Output Characteristics  
@ 150ºC  
Fig. 4. RDS(on) Normalized to ID = 150A Value  
vs. Junction Temperature  
300  
275  
250  
225  
200  
175  
150  
125  
100  
75  
2.0  
1.9  
1.8  
1.7  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
VGS = 15V  
VGS = 10V  
10V  
9V  
8V  
I D = 300A  
7V  
I D = 150A  
6V  
5V  
50  
25  
0
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 150A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
180  
160  
140  
120  
100  
80  
2.2  
2.1  
2.0  
1.9  
1.8  
1.7  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
VGS = 10V  
External Lead Current Limit  
15V  
- - - -  
TJ = 175ºC  
60  
TJ = 25ºC  
40  
20  
0
-50  
-25  
0
25  
50  
75  
100 125 150 175 200  
0
50  
100  
150  
200  
250  
300  
350  
ID - Amperes  
TC - Degrees Centigrade  
© 2008 IXYS CORPORATION, All rights reserved  
IXTH300N04T2  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
180  
160  
140  
120  
100  
80  
160  
140  
120  
100  
80  
TJ = - 40ºC  
25ºC  
150ºC  
TJ = 150ºC  
25ºC  
- 40ºC  
60  
60  
40  
40  
20  
20  
0
0
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
320  
280  
240  
200  
160  
120  
80  
VDS = 20V  
I D = 150A  
I G = 10mA  
TJ = 150ºC  
TJ = 25ºC  
40  
0
0
20  
40  
60  
80  
100  
120  
140  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
1.3  
QG - NanoCoulombs  
VSD - Volts  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
100,000  
10,000  
1,000  
100  
1,000  
100  
10  
RDS( ) Limit  
on  
= 1 MHz  
f
25µs  
C
iss  
100µs  
External Lead Current Limit  
1ms  
C
oss  
10ms  
100ms  
TJ = 175ºC  
TC = 25ºC  
Single Pulse  
C
rss  
DC  
1
0
5
10  
15  
20  
25  
30  
35  
40  
1
10  
100  
VDS - Volts  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: T_300N04T2(V6)12-15-08-B  
IXTH300N04T2  
Fig. 14. Resistive Turn-on  
Rise Time vs. Drain Current  
Fig. 13. Resistive Turn-on  
Rise Time vs. Junction Temperature  
40  
35  
30  
25  
20  
15  
10  
30  
28  
26  
24  
22  
20  
18  
16  
14  
RG = 2Ω  
RG = 2Ω  
VGS = 10V  
VDS = 20V  
VGS = 10V  
VDS = 20V  
TJ = 125ºC  
I D = 200A  
I D = 100A  
TJ = 25ºC  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
40  
60  
80  
100  
120  
140  
160  
180  
200  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
45  
55  
50  
45  
40  
35  
30  
25  
20  
15  
120  
100  
80  
60  
40  
20  
0
75  
65  
55  
45  
35  
25  
15  
t r  
t
d(on) - - - -  
tf  
td(off) - - - -  
RG = 2Ω, VGS = 10V  
40  
35  
30  
25  
20  
15  
10  
5
TJ = 125ºC, VGS = 10V  
VDS = 20V  
VDS = 20V  
I D = 100A  
I D = 200A, 100A  
I D = 200A  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
2
4
6
8
10  
12  
14  
16  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
40  
36  
32  
28  
24  
20  
16  
12  
8
60  
55  
50  
45  
40  
35  
30  
25  
20  
250  
225  
200  
175  
150  
125  
100  
75  
220  
200  
180  
160  
140  
120  
100  
80  
t f  
RG = 2Ω, VGS = 10V  
t
d(off) - - - -  
tf  
td(off) - - - -  
TJ = 125ºC, VGS = 10V  
VDS = 20V  
VDS = 20V  
I D = 100A, 200A  
TJ = 125ºC  
TJ = 25ºC  
50  
60  
25  
40  
0
20  
2
4
6
8
10  
12  
14  
16  
40  
60  
80  
100  
120  
140  
160  
180  
200  
RG - Ohms  
ID - Amperes  
© 2008 IXYS CORPORATION, All rights reserved  
IXTH300N04T2  
Fig. 19. Maximum Transient Thermal Impedance  
1.000  
0.100  
0.010  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: T_300N04T2(V6)12-15-08-B  
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