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IXSX50N60BD1

型号：

IXSX50N60BD1

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

103 K

下载PDF手册
IGBT with Diode  
IXSK 50N60BD1 VCES  
IXSX 50N60BD1 IC25  
= 600 V  
= 75 A  
VCE(sat) = 2.5 V  
Short Circuit SOA Capability  
PLUS247  
(IXSX)  
Symbol  
TestConditions  
MaximumRatings  
C (TAB)  
G
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
C
E
TJ = 25°C to 150°C; RGE = 1 MW  
V
TO-264 AA  
(IXSK)  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
IC25  
IC90  
ICM  
TC = 25°C, limited by leads  
TC = 90°C  
75  
50  
A
A
A
G
C
E
TC = 25°C, 1 ms  
200  
SSOA  
(RBSOA)  
VGE= 15 V, TVJ = 125°C, RG = 22 W  
Clamped inductive load, L = 30 mH  
ICM = 100  
@ 0.8 VCES  
A
ms  
W
G = Gate,  
E = Emitter,  
C = Collector,  
TAB = Collector  
tSC  
(SCSOA)  
VGE= 15 V, VCE = 360 V, TJ = 125°C  
RG = 22 W, non repetitive  
10  
Features  
• Internationalstandardpackage  
PC  
TC = 25°C  
300  
JEDEC TO-264 AA, and hole-less  
TO-247 package for clip mounting  
• Guaranteed Short Circuit SOA  
capability  
• High frequency IGBT and anti-  
parallel FRED in one package  
• Latest generation HDMOSTM process  
• Low VCE(sat)  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
Md  
Mountingtorque  
0.9/6 Nm/lb.in.  
Weight  
10  
g
- forminimumon-stateconduction  
losses  
• MOS Gate turn-on  
Maximumleadtemperatureforsoldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
- drive simplicity  
• Fast RecoveryEpitaxial Diode (FRED)  
- soft recovery with low IRM  
Applications  
Symbol  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
• AC motor speed control  
• DC servo and robot drives  
• DC choppers  
• Uninterruptiblepowersupplies(UPS)  
• Switch-modeandresonant-mode  
powersupplies  
BVCES  
VGE(th)  
IC = 3 mA, VGE = 0 V  
IC = 4 mA, VCE = VGE  
600  
4
V
8
V
ICES  
VCE = 0.8 • VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
350  
5
mA  
mA  
Advantages  
• Space savings (two devices in one  
package)  
• Easy to mount with 1 screw  
(isolatedmountingscrewhole)  
• Reduces assembly time and cost  
IGES  
VCE = 0 V, VGE = ±20 V  
±100  
nA  
V
VCE(sat)  
IC = IC90; VGE = 15 V  
2.2  
2.5  
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
98619(4/99)  
1 - 5  
IXSK 50N60BD1  
IXSX 50N60BD1  
Symbol  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
TO-264 AA Outline  
gfs  
IC = IC90; VCE = 10 V,  
16  
23  
S
Pulse test, t £ 300 ms, duty cycle £ 2 %  
IC(on)  
VGE = 15 V, VCE = 10 V  
160  
A
Cies  
Coes  
Cres  
3850  
440  
50  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
Qg  
167  
45  
nC  
nC  
nC  
Dim.  
Millimeter  
Inches  
Qge  
Qgc  
IC = IC90, VGE = 15 V, VCE = 0.5 VCES  
Min.  
Max.  
Min.  
Max.  
A
A1  
A2  
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.190  
.100  
.079  
.202  
.114  
.083  
88  
td(on)  
tri  
td(off)  
tfi  
70  
70  
ns  
ns  
b
b1  
b2  
1.12  
2.39  
2.90  
1.42  
2.69  
3.09  
.044  
.094  
.114  
.021  
1.020  
.780  
.215 BSC  
.000  
.000  
.056  
.106  
.122  
.033  
1.030  
.786  
Inductive load, TJ = 25°C  
IC = IC90, VGE = 15 V, L = 100 mH,  
VCE = 0.8 VCES, RG = 2.7 W  
c
0.53  
0.83  
150  
150  
3.3  
300 ns  
300 ns  
6.0 mJ  
D
E
e
25.91 26.16  
19.81 19.96  
5.46 BSC  
0.00  
0.00  
20.32 20.83  
Remarks: Switching times may increase  
for VCE (Clamp) > 0.8 • VCES, higher TJ or  
increased RG  
J
0.25  
0.25  
.010  
.010  
.820  
.102  
Eoff  
K
L
L1  
P
.800  
.090  
.125  
2.29  
3.17  
2.59  
3.66  
td(on)  
tri  
70  
70  
ns  
ns  
mJ  
ns  
.144  
Inductive load, TJ = 125°C  
IC = IC90, VGE = 15 V, L = 100 mH  
VCE = 0.8 VCES, RG = 2.7 W  
Q
Q1  
R
R1  
S
T
6.07  
8.38  
3.81  
1.78  
6.04  
1.57  
6.27  
8.69  
4.32  
2.29  
6.30  
1.83  
.239  
.330  
.150  
.070  
.238  
.062  
.247  
.342  
.170  
.090  
.248  
.072  
Eon  
td(off)  
tfi  
2.5  
230  
230  
Remarks: Switching times may increase  
for VCE (Clamp) > 0.8 • VCES, higher TJ or  
increased RG  
ns  
Eoff  
4.8  
mJ  
PLUS247TM (IXSX)  
RthJC  
RthCK  
0.42 K/W  
K/W  
0.15  
Reverse Diode (FRED)  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Symbol  
VF  
TestConditions  
IF = IC90, VGE = 0 V,  
2.5  
2.5  
V
Pulse test, t £ 300 ms, duty cycle d £ 2 %  
Dim.  
Millimeter  
Inches  
IRM  
trr  
IF = IC90, VGE = 0 V, -diF/dt = 100 A/ms  
VR = 100 V  
2
A
Min. Max. Min. Max.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V TJ = 25°C  
35  
ns  
RthJC  
0.75 K/W  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
L
L1  
5.45 BSC  
19.81 20.32  
.215 BSC  
.780 .800  
.150 .170  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 .244  
.170 .190  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:  
© 2000 IXYS All rights reserved  
2 - 5  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715  
5,381,025  
IXSK 50N60BD1  
IXSX 50N60BD1  
160  
120  
80  
100  
80  
60  
40  
20  
0
TJ = 25°C  
V
GE = 15V  
TJ = 25°C  
13V  
11V  
VGE = 15V  
13V  
11V  
9V  
40  
9V  
7V  
0
0
4
8
12  
16  
20  
0
2
4
6
8
10  
VCE - Volts  
VCE - Volts  
Figure 1. Saturation Voltage Characteristics  
Figure 2. Extended Output Characteristics  
1.6  
100  
V
GE = 15V  
13V  
IC = 100A  
TJ = 125°C  
1.4  
80  
60  
40  
20  
0
VGE = 15V  
1.2  
1.0  
11V  
I
C = 50A  
0.8  
0.6  
0.4  
IC = 25A  
9V  
7V  
25  
50  
75  
100  
125  
150  
0
2
4
6
8
10  
VCE - Volts  
TJ - Degrees C  
Figure 3. Saturation Voltage Characteristics  
Figure 4. Temperature Dependence of VCE(sat)  
10000  
100  
f = 1Mhz  
V
CE = 10V  
C
iss  
80  
60  
40  
20  
0
1000  
C
oss  
100  
TJ = 125°C  
C
rss  
TJ = 25°C  
10  
0
5
10 15 20 25 30 35 40  
4
6
8
10  
VGE - Volts  
12  
14  
16  
VCE-Volts  
Figure 5. Admittance Curves  
Figure 6. Capacitance Curves  
© 2000 IXYS All rights reserved  
3 - 5  
IXSK 50N60BD1  
IXSX 50N60BD1  
24  
20  
16  
12  
8
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
4
3
2
1
0
20  
TJ = 125°C  
RG = 10  
E(ON)  
TJ = 125°C  
E(OFF)  
15  
IC = 100A  
E(ON)  
E(OFF)  
10  
5
E(OFF)  
IC = 50A  
IC =25A  
E(ON)  
E(OFF)  
4
E(ON)  
0
60  
0
100  
0
10  
20  
30  
40  
50  
0
20  
40  
60  
80  
RG - Ohms  
IC - Amperes  
Figure 7. Dependence of EON and EOFF on IC.  
Figure 8. Dependence of EON and EOFF on RG.  
600  
20  
I
C =50A  
VCE = 250V  
100  
16  
12  
8
TJ = 125°C  
10  
RG = 6.2  
dV/dt < 5V/ns  
1
4
0.1  
0
0
100  
200  
300  
400  
500  
600  
0
25  
50  
75 100 125 150 175  
VCE - Volts  
Qg - nanocoulombs  
Figure 10. Turn-off Safe Operating Area  
Figure 9. Gate Charge  
1
D=0.5  
0.1  
D=0.2  
D=0.1  
D=0.05  
D=0.02  
D = Duty Cycle  
0.01  
D=0.01  
Single pulse  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Seconds  
Figure 11. Transient Thermal Resistance  
© 2000 IXYS All rights reserved  
4 - 5  
IXSK 50N60BD1  
IXSX 50N60BD1  
60  
A
1000  
nC  
30  
A
TVJ=100°C  
VR = 300V  
TVJ=100°C  
VR = 300V  
50  
40  
30  
20  
10  
0
25  
800  
IF= 60A  
IF= 30A  
IF= 15A  
IRM  
IF= 60A  
IF= 30A  
IF= 15A  
Qr  
IF  
20  
15  
10  
5
600  
400  
200  
0
TVJ=150°C  
TVJ=100°C  
TVJ=25°C  
0
A/ s  
-diF/dt  
0
1
2
3 V  
VF  
100  
1000  
0
200 400 600 1000  
A/ s  
-diF/dt  
Fig. 14 Peak reverse current IRM  
versus -diF/dt  
Fig. 12 Forward current IF versus VF  
2.0  
Fig. 13 Reverse recovery charge Qr  
versus -diF/dt  
90  
20  
1.00  
TVJ=100°C  
TVJ=100°C  
IF = 30A  
VR = 300V  
V
VFR  
15  
µs  
ns  
tfr  
VFR  
trr  
1.5  
Kf  
0.75  
0.50  
0.25  
0
tfr  
80  
IF= 60A  
IF= 30A  
IF= 15A  
1.0  
10  
5
IRM  
70  
60  
0.5  
Qr  
0.0  
0
A/ s  
0
40  
80  
120  
160  
0
200 400 600 1000  
A/ s  
0
200 400 600 1000  
°C  
diF/dt  
TVJ  
-diF/dt  
Fig. 17 Peak forward voltage VFR and tfr  
versus diF/dt  
Fig. 15 Dynamic parameters Qr, IRM  
versus TVJ  
Fig. 16 Recovery time trr versus -diF/dt  
1
Constants for ZthJC calculation:  
K/W  
i
Rthi (K/W)  
ti (s)  
1
2
3
0.465  
0.179  
0.256  
0.0052  
0.0003  
0.0396  
0.1  
ZthJC  
0.01  
DSEC 60-06B  
0.001  
0.00001  
s
0.0001  
0.001  
0.01  
0.1  
1
t
Fig. 18 Transient thermal resistance junction to case  
© 2000 IXYS All rights reserved  
5 - 5  
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