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IXTX22N100L

型号：

IXTX22N100L

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

162 K

下载PDF手册
LinearTM Power MOSFET  
w/ Extended FBSOA  
VDSS = 1000V  
ID25 = 22A  
RDS(on) ≤ 600mΩ  
IXTK22N100L  
IXTX22N100L  
N-Channel Enhancement Mode  
AvalancheRated  
TO-264(IXTK)  
G
D
S
Symbol  
VDSS  
TestConditions  
MaximumRatings  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
1000  
1000  
V
V
Tab  
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
±30  
±40  
V
V
PLUS247(IXTX)  
ID25  
IDM  
TC =25°C  
TC = 25°C, Pulse Width Limited by TJM  
22  
50  
A
A
IA  
TC =25°C  
TC =25°C  
22  
A
J
G
D
Tab  
S
EAS  
1.5  
PD  
TC =25°C  
700  
W
G = Gate  
D
= Drain  
S = Source  
Tab = Drain  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
TL  
1.6mm (0.063 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
Features  
TSOLD  
• Designed for Linear Operation  
• AvalancheRated  
• Molding Epoxy Meets UL94 V-0  
FlammabilityClassification  
Md  
FC  
Mounting Torque (IXTK)  
Mounting Force (IXTX)  
1.13/10  
Nm/lb.in.  
N/lb.  
20..120 / 4.5..27  
Weight  
TO-264  
PLUS247  
10  
6
g
g
Advantages  
• Easy to Mount  
• SpaceSavings  
• High Power Density  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
1000  
3.0  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 250μA  
VGS = ±30V, VDS = 0V  
VDS = VDSS,VGS = 0V  
V
V
Applications  
5.5  
• ProgrammableLoads  
• CurrentRegulators  
• DC-DCConverters  
• BatteryChargers  
• DCChoppers  
• Temperature and Lighting Controls  
±200 nA  
IDSS  
50 μA  
1 mA  
TJ = 125°C  
RDS(on)  
VGS = 20V, ID = 0.5 • IDSS, Note 1  
600 mΩ  
DS99293D(10/10)  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXTK22N100L  
IXTX22N100L  
Symbol  
TestConditions  
Characteristic Values  
TO-264 Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 20V, ID = 0.5 • IDSS, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
4.5  
7.0  
9.5  
S
Ciss  
Coss  
Crss  
7050  
600  
pF  
pF  
pF  
100  
td(on)  
tr  
td(off)  
tf  
36  
35  
80  
50  
ns  
ns  
ns  
ns  
Resistive Switching Times  
1 - Gate  
V
GS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS  
2 - Drain  
3 - Source  
4 - Drain  
RG = 2Ω (External)  
Millimeter  
Inches  
Dim.  
Min.  
Max.  
Min.  
Max.  
Qg(on)  
Qgs  
270  
70  
nC  
nC  
nC  
A
A1  
A2  
b
b1  
b2  
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.190  
.100  
.079  
.044  
.094  
.114  
.202  
.114  
.083  
.056  
.106  
.122  
VGS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS  
Qgd  
110  
1.12  
2.39  
2.90  
1.42  
2.69  
3.09  
RthJC  
RthCS  
0.18 °C/W  
°C/W  
c
0.53  
0.83  
.021  
1.020  
.780  
.033  
1.030  
.786  
0.15  
D
E
e
25.91 26.16  
19.81 19.96  
5.46BSC  
.215BSC  
J
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
K
L
L1  
20.32 20.83  
.800  
.090  
.820  
.102  
Safe-Operating-AreaSpecification  
2.29  
2.59  
P
3.17  
3.66  
.125  
.144  
Q
Q1  
R
R1  
6.07  
8.38  
3.81  
1.78  
6.27  
8.69  
4.32  
2.29  
.239  
.330  
.150  
.070  
.247  
.342  
.170  
.090  
Symbol  
SOA  
TestConditions  
Characteristic Values  
Min.  
Typ.  
Max.  
VDS = 800V, ID = 0.3A, TC = 90°C , tp = 5s  
240  
W
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
PLUS 247TM Outline  
Source-DrainDiode  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
22  
A
A
ISM  
VSD  
trr  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
50  
1.5  
V
1000  
ns  
IF = IS, -di/dt = 100A/μs, VR =100V, VGS = 0V  
Terminals: 1 - Gate  
2 - Drain  
3 - Source  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min. Max.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
5.45BSC  
.215BSC  
L
L1  
19.81 20.32  
.780 .800  
.150 .170  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072  
4,881,106  
4,835,592  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405 B2 6,759,692  
6,710,463  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTK22N100L  
IXTX22N100L  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
22  
20  
18  
16  
14  
12  
10  
8
45  
40  
35  
30  
25  
20  
15  
10  
5
VGS = 20V  
14V  
VGS = 20V  
14V  
12V  
12V  
10V  
10V  
9V  
6
9V  
8V  
8V  
4
7V  
6V  
2
7V  
0
0
0
1
2
3
4
5
6
7
8
9
10  
11  
12  
30  
44  
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 11A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
22  
20  
18  
16  
14  
12  
10  
8
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
VGS = 20V  
12V  
VGS = 20V  
10V  
I D = 22A  
I D = 11A  
9V  
8V  
6
7V  
4
2
6V  
5V  
0
0
5
10  
15  
20  
25  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
Fig. 5. RDS(on) Normalized to ID = 11A Value vs.  
Drain Current  
25  
20  
15  
10  
5
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
VGS = 20V  
TJ = 125ºC  
TJ = 25ºC  
0
0
4
8
12  
16  
20  
24  
28  
32  
36  
40  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
ID - Amperes  
TC - Degrees Centigrade  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXTK22N100L  
IXTX22N100L  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
20  
18  
16  
14  
12  
10  
8
14  
12  
10  
8
TJ = - 40ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
25ºC  
125ºC  
6
6
4
4
2
2
0
0
0
5
10  
15  
20  
25  
30  
35  
40  
3
4
5
6
7
8
9
10  
11  
VGS - Volts  
ID - Amperes  
Fig. 10. Gate Charge  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
16  
14  
12  
10  
8
70  
60  
50  
40  
30  
20  
10  
0
VDS = 500V  
I
D = 11A  
I G = 10mA  
6
TJ = 125ºC  
4
TJ = 25ºC  
2
0
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
0
40  
80  
120  
160  
200  
240  
280  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Maximum Transient Thermal Impedance  
1.000  
0.100  
0.010  
0.001  
10,000  
1,000  
100  
C
iss  
C
oss  
C
rss  
= 1 MHz  
5
f
10  
0
10  
15  
20  
25  
30  
35  
40  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
VDS - Volts  
Pulse Width - Second  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTK22N100L  
IXTX22N100L  
Fig. 13. Forward-Bias Safe Operating Area  
@ TC = 25ºC  
Fig. 14. Forward-Bias Safe Operating Area  
@ TC = 90ºC  
100  
10  
1
100  
10  
1
R
Limit  
DS(on)  
R
Limit  
DS(on)  
25µs  
25µs  
100µs  
100µs  
1ms  
1ms  
10ms  
DC  
10ms  
TJ = 150ºC  
DC  
T
T
= 150ºC  
= 25ºC  
J
TC = 90ºC  
C
Single Pulse  
Single Pulse  
0.1  
0
10  
100  
1,000  
10,000  
10  
100  
1,000  
10,000  
VDS - Volts  
VDS - Volts  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_22N100L(8N)3-19-10  
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