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IXTA110N12T2

型号：

IXTA110N12T2

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

212 K

下载PDF手册
Advance Technical Information  
TrenchT2TM  
Power MOSFET  
VDSS = 120V  
ID25 = 110A  
RDS(on) 14m  
IXTA110N12T2  
IXTP110N12T2  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Rectifier  
TO-263AA (IXTA)  
G
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
D (Tab)  
TJ = 25C to 175C  
TJ = 25C to 175C, RGS = 1M  
120  
120  
V
V
VDGR  
TO-220AB (IXTP)  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
ID25  
IDM  
TC = 25C  
110  
200  
A
A
G
TC = 25C, Pulse Width Limited by TJM  
D
D (Tab)  
= Drain  
S
IA  
TC = 25C  
TC = 25C  
TC = 25C  
55  
800  
517  
A
mJ  
W
EAS  
PD  
G = Gate  
D
S = Source  
Tab = Drain  
TJ  
-55 ... +175  
175  
C  
C  
C  
TJM  
Tstg  
Features  
-55 ... +175  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
International Standard Packages  
175°C Operating Temperature  
Avalanche Rated  
Md  
Mounting Torque (TO-220)  
1.13 / 10  
Nm/lb.in.  
Low RDS(on)  
Weight  
TO-263  
TO-220  
2.5  
3.0  
g
g
Fast Intrinsic Rectifier  
High Current Handling Capability  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min. Typ.  
Max.  
Easy to Mount  
Space Savings  
High Power Density  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250A  
VDS = VGS, ID = 250A  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
120  
2.5  
V
V
4.5  
            200 nA  
Applications  
IDSS  
5 A  
Synchronous Rectification  
DC/DC Converters and Off-Line UPS  
Primary- Side Switch  
High Current Switching Applications  
TJ = 150C  
VGS = 10V, ID = 0.5 • ID25, Notes 1, 2  
350 A  
RDS(on)  
11.4 14.0 m  
DS100830A(5/17)  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXTA110N12T2  
IXTP110N12T2  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
TO-263 Outline  
(TJ = 25C, Unless Otherwise Specified)  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
46  
78  
S
Ciss  
Coss  
Crss  
6570  
586  
43  
pF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
21  
30  
29  
15  
ns  
ns  
ns  
ns  
Resistive Switching Times  
Pins:  
1 - Gate  
2,4 - Drain  
3 - Source  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 2(External)  
Qg(on)  
Qgs  
120  
36  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
30  
RthJC  
RthCH  
0.29 C/W  
C/W  
TO-220  
0.50  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min. Typ.  
Max.  
110  
440  
1.4  
IS  
VGS = 0V  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
TO-220 Outline  
trr  
64  
14.4  
460  
ns  
A
IF = 0.5 • ID25, VGS = 0V  
IRM  
QRM  
-di/dt = 100A/s  
VR = 60V  
nC  
Notes: 1. Pulse test, t 300s, duty cycle, d  2%.  
2. On through-hole packages, RDS(on) Kelvin test contact  
location must be 5mm or less from the package body.  
Pins: 1 - Gate  
3 - Source  
2 - Drain  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTA110N12T2  
IXTP110N12T2  
Fig. 1. Output Characteristics @ TJ = 25oC  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
450  
400  
350  
300  
250  
200  
150  
100  
50  
V
= 15V  
V
= 15V  
10V  
GS  
GS  
10V  
9V  
8V  
9V  
7V  
8V  
7V  
6V  
5V  
6V  
5V  
0
0
5
10  
15  
20  
25  
30  
175  
175  
0
0.5  
1
1.5  
VDS - Volts  
VDS - Volts  
Fig. 4. Normalized RDS(on) to ID = 55A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150oC  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
V
= 15V  
GS  
V
= 10V  
GS  
10V  
8V  
7V  
6V  
I
D
= 110A  
I
= 55A  
D
5V  
4V  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. Normalized RDS(on) to ID = 55A  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
120  
100  
80  
60  
40  
20  
0
6
5
4
3
2
1
0
V
= 10V  
GS  
T = 175oC  
J
T = 25oC  
J
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
50  
100  
150  
200  
250  
300  
350  
400  
ID - Amperes  
TC - Degrees Centigrade  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXTA110N12T2  
IXTP110N12T2  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
160  
140  
120  
100  
80  
200  
160  
120  
80  
T
J
= - 40oC  
V
= 10V  
V
= 10V  
DS  
DS  
25oC  
150oC  
60  
T
J
= 150oC  
25oC  
- 40oC  
40  
40  
20  
0
0
0
40  
80  
120  
160  
200  
240  
3.0  
0.0  
0
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
2.8  
40  
ID - Amperes  
VGS - Volts  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
800  
700  
600  
500  
400  
300  
200  
100  
0
10  
8
V
= 60V  
DS  
I
I
= 55A  
D
G
= 10mA  
6
4
T
J
= 150oC  
= 25oC  
2
T
J
0
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
0
20  
40  
60  
80  
100  
120  
QG - NanoCoulombs  
VSD - Volts  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
1000  
100  
10  
10,000  
1,000  
100  
C
iss  
R
Limit  
DS(on)  
100μs  
C
oss  
1ms  
1
= 175oC  
10ms  
DC  
T
J
T
= 25oC  
C
C
rss  
= 1 MHz  
5
f
Single Pulse  
0.1  
10  
1
10  
100  
1,000  
10  
15  
20  
25  
30  
35  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTA110N12T2  
IXTP110N12T2  
Fig. 13. Resistive Turn-on Rise Time  
vs. Junction Temperature  
Fig. 14. Resistive Turn-on Rise Time  
vs. Drain Current  
40  
36  
32  
28  
24  
20  
16  
40  
36  
32  
28  
24  
20  
16  
R
= 2ꢀ , V = 10V  
GS  
G
R
= 2Ω , V = 10V  
GS  
G
V
= 60V  
DS  
V
= 60V  
DS  
T
J
= 25oC  
I
= 220A  
D
I
= 110A  
D
T
J
= 150oC  
25  
50  
75  
100  
125  
150  
40  
25  
2
60  
80  
100  
120  
140  
160  
180  
200  
220  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on Switching Times  
vs. Gate Resistance  
Fig. 16. Resistive Turn-off Switching Times  
vs. Junction Temperature  
160  
140  
120  
100  
80  
55  
40  
35  
30  
25  
20  
15  
10  
5
90  
t f  
td(off)  
t f  
td(off)  
50  
45  
40  
35  
30  
25  
20  
15  
80  
70  
60  
50  
40  
30  
20  
10  
T = 150oC, V = 10V  
R
G
= 2Ω, V = 10V  
GS  
J
GS  
V
= 60V  
DS  
V
= 60V  
DS  
I
= 110A  
D
I
= 220A  
D
60  
I
= 220A  
D
I
= 110A  
D
40  
20  
0
0
50  
75  
100  
125  
150  
2
3
4
5
6
7
8
9
10  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 17. Resistive Turn-off Switching Times  
vs. Drain Current  
Fig. 18. Resistive Turn-off Switching Times  
vs. Gate Resistance  
19  
18  
17  
16  
15  
14  
13  
12  
80  
70  
60  
50  
40  
30  
20  
10  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
t f  
td(off)  
t f  
td(off)  
R
G
= 2ꢀ, VGS = 10V  
T = 150oC, V = 10V  
J GS  
V
DS = 60V  
V
= 60V  
DS  
I
= 110A  
D
T
= 25oC  
J
I
= 220A  
D
T
= 150oC  
J
3
4
5
6
7
8
9
10  
40  
60  
80  
100  
120  
140  
160  
180  
200  
220  
ID - Amperes  
RG - Ohms  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXTA110N12T2  
IXTP110N12T2  
Fig. 19. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Second  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: IXT_110N12T2 (G5-N12)5-03-17  
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