N-Channel Depletion Mode MOSFET
Depletion Mode MOSFETs
Chip size
Type
VDSS
max.
RDSon
max.
Chip
type
Source -
bond wire
Equivalent
device
Depletion mode MOSFETs, unlike the regular enhancement
type MOSFETs, requires a negative gate bias to turn it off.
Consequently they remain on at or above zero gate bias
voltage but otherwise have similar MOSFET characteristics.
Their Rds(on) and breakdown voltage have a positive
temperature coefficient, increasing the gate bias voltage
increases the gate channel conductivity and so decreases
Rds(on) to some extent and there is a usable intrinsic
diode. IXYS Corporation’s IXTP01N100D is a depletion
mode MOSFET rated at VDSS = 1000 Volts and ID = 100 mA
and its RDS(on) = 110 Ohms at VGS = 0 Volt. The other
dimensions
recommended
data sheet
V
Ω
mm
mils
IXTD 02N50D-1M
IXTD 01N100D-1M
500
30
1M
1M
1.96 x 1.68
1.96 x 1.68
77 x 66
3 mil x 1
3 mil x 1
IXTP 02N50D
IXTP 01N100D
1000
110
77 x 66
depletion mode MOSFET, IXTP02N05D, is rated at VDSS
=
500 Volts, ID = 200 mA, while its RDS(on) = 30 Ohms. The
minimum required gate bias to turn them off is –5 Volts.
They are both housed in TO-220 package and can dissipate
25 Watts at TC = 250C.
There are many applications in which IXTP01N100D and
IXTP02N05D can be used: current regulators, off-line
linear regulators, input transient voltage suppressors, input
current inrush limiters, solid state relays etc.
P-Channel Power MOSFET
Type
VDSS
RDS(ON)
max.
Chip
type
Chip size
dimensions
Source -
bond wire
Equivalent
device
max.
recommended
data sheet
V
Ω
mm
mils
100
0.08
0.06
IXTD36P10-5B
5B
7B
6.58 x 6.58
8.84 x 7.18
259 x 259
348 x 283
12 mil x 3
15 mil x 3
IXTH36P10
IXTH50P10
IXTD50P10-7B
200
500
0.22
0.16
IXTD16P20-5B
IXTD24P20-7B
5B
7B
6.58 x 6.58
8.84 x 7.18
259 x 259
348 x 283
12 mil x 3
15 mil x 3
IXTH16P20
IXTH24P20
1.20
0.75
1.05
IXTD8P50-5B
IXTD11P50-7B
IXTD10P60-7B
5B
7B
7B
6.58 x 6.58
8.84 x 7.18
8.84 x 7.18
259 x 259
348 x 283
348 x 283
12 mil x 3
15 mil x 3
15 mil x 3
IXTH7P50
IXTH11P50
IXTH10P60
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