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IXTP80N075L2

型号：

IXTP80N075L2

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

178 K

下载PDF手册
Advance Technical Information  
LinearL2TM Power  
MOSFETs w/Extended  
FBSOA  
VDSS = 75V  
ID25 = 80A  
RDS(on) 24m  
IXTA80N075L2  
IXTP80N075L2  
IXTH80N075L2  
N-Channel Enhancement Mode  
Guaranteed FBSOA  
TO-263AA (IXTA)  
Avalanche Rated  
G
S
D (Tab)  
TO-220AB (IXTP)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
75  
75  
V
V
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
G
D
D (Tab)  
S
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
80  
A
A
TO-247 (IXTH)  
180  
IA  
EAS  
TC = 25C  
TC = 25C  
40  
2.5  
A
J
PD  
TC = 25C  
357  
W
G
TJ  
-55 to +150  
+150  
C  
C  
C  
D
S
D (Tab)  
TJM  
Tstg  
G = Gate  
S = Source  
D
= Drain  
-55 to +150  
Tab = Drain  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
Features  
FC  
Md  
Mounting Force (TO-263)  
Mounting Torque (TO-220 & TO-247)  
10..65 / 2.2..14.6  
1.13 / 10  
N/lb  
Nm/lb.in  
Designed for Linear Operation  
International Standard Packages  
Avalanche Rated  
Weight  
TO-263  
TO-220  
TO-247  
2.5  
3.0  
6.0  
g
g
g
Guaranteed FBSOA at 75C  
Advantages  
Easy to Mount  
Space Savings  
High Power Density  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250A  
VDS = VGS, ID = 250A  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
75  
V
V
Solid State Circuit Breakers  
Soft Start Controls  
2.5  
4.5  
Linear Amplifiers  
100 nA  
A  
Programmable Loads  
Current Regulators  
IDSS  
5
TJ = 125C  
VGS = 10V, ID = 0.5 • ID25, Note 1  
25 A  
24 m  
RDS(on)  
© 2013 IXYS CORPORATION, All Rights Reserved  
DS100556(8/13)  
IXTA80N075L2 IXTP80N075L2  
IXTH80N075L2  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
24  
30  
36  
S
Ciss  
Coss  
Crss  
3600  
935  
pF  
pF  
pF  
325  
RGi  
Integrated Gate Input Resistor  
1.2  
td(on)  
tr  
td(off)  
tf  
15  
35  
40  
12  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 0(External)  
Qg(on)  
Qgs  
103  
14  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
48  
RthJC  
RthCS  
0.35 C/W  
TO-220  
TO-247  
0.50  
0.21  
C/W  
C/W  
Safe Operating Area Specification  
Characteristic Values  
Symbol  
SOA  
Test Conditions  
Min.  
Typ.  
Max.  
VDS = 75V, ID = 2.86A, TC = 75°C, Tp = 5s  
214  
W
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
80  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
320  
1.4  
trr  
IRM  
QRM  
160  
14  
1.3  
ns  
A
μC  
IF = 40A, -di/dt = 100A/s,  
VR = 38V, VGS = 0V  
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTA80N075L2 IXTP80N075L2  
IXTH80N075L2  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
= 20V  
V
= 20V  
GS  
GS  
15V  
13V  
12V  
250  
200  
150  
100  
50  
15V  
12V  
10V  
9V  
11V  
8V  
10V  
7V  
6V  
9V  
8V  
7V  
5V  
6V  
5V  
0
0
0.5  
1
1.5  
2
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 40A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
= 20V  
GS  
V
= 10V  
GS  
15V  
12V  
10V  
9V  
8V  
7V  
I
= 80A  
D
I
= 40A  
D
6V  
5V  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
Fig. 5. RDS(on) Normalized to ID = 40A Value vs.  
Drain Current  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
V
= 10V  
GS  
T = 125ºC  
J
T = 25ºC  
J
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
ID - Amperes  
TC - Degrees Centigrade  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXTA80N075L2 IXTP80N075L2  
IXTH80N075L2  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
160  
140  
120  
100  
80  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
T = - 40ºC  
J
T
J
= - 40ºC  
25ºC  
125ºC  
25ºC  
125ºC  
60  
40  
20  
0
0
0
20  
40  
60  
80  
100  
120  
140  
160  
3
4
5
6
7
8
9
10  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
280  
240  
200  
160  
120  
80  
10  
9
8
7
6
5
4
3
2
1
0
V
= 37.5V  
DS  
I
I
= 40A  
D
G
= 10mA  
T
J
= 125ºC  
T
= 25ºC  
1.1  
J
40  
0
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
110  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.2  
1.3  
1.4  
1.5  
QG - NanoCoulombs  
VSD - Volts  
Fig. 12. Maximum Transient Thermal Impedance  
Fig. 11. Capacitance  
10,000  
1,000  
100  
1
C
iss  
0.1  
C
oss  
0.01  
C
rss  
f
= 1 MHz  
5
0.001  
0
10  
15  
20  
25  
30  
35  
40  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
VDS - Volts  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTA80N075L2 IXTP80N075L2  
IXTH80N075L2  
Fig. 14. Forward-Bias Safe Operating Area  
@ TC = 75ºC  
Fig. 13. Forward-Bias Safe Operating Area  
@ TC = 25ºC  
1000  
100  
10  
1000  
100  
10  
R
DS(on)  
Limit  
R
DS(on)  
Limit  
25µs  
25µs  
100µs  
100µs  
1ms  
1ms  
10ms  
100ms  
10ms  
DC  
TJ = 150ºC  
C = 75ºC  
Single Pulse  
TJ = 150ºC  
100ms  
T
TC = 25ºC  
DC  
Single Pulse  
1
1
1
10  
100  
1
10  
100  
VDS - Volts  
VDS - Volts  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_80N075L2(6R) 8-16-13  
IXTA80N075L2 IXTP80N075L2  
IXTH80N075L2  
TO-263 Outline  
TO-247 Outline  
P  
1
2
3
Pins:  
1 - Gate  
2,4 - Drain  
3 - Source  
e
Terminals: 1 - Gate  
2 - Drain  
3 - Source  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
P 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
TO-220 Outline  
Pins: 1 - Gate  
3 - Source  
2 - Drain  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
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