IXTT10N100D
IXTH10N100D
Symbol
Test Conditions
Characteristic Values
TO-268 Outline
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 30V, ID = 0.5 • ID25, Note 1
VGS = -10V, VDS = 25V, f = 1MHz
3.0
5.4
S
Ciss
Coss
Crss
2500
pF
pF
pF
300
100
td(on)
tr
td(off)
tf
35
85
ns
ns
ns
ns
Resistive Switching Times
VGS = -10V, VDS = 0.5 • VDSX, ID = 0.5 • ID25
RG = 4.7Ω (External)
110
75
Terminals: 1 - Gate
3 - Source
2,4 - Drain
Qg(on)
Qgs
130
27
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSX, ID = 0.5 • ID25
Qgd
58
RthJC
RthCS
0.31 °C/W
°C/W
TO-247
0.21
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
VSD
trr
IF = ID25, VGS = -10V, Note 1
1.1
1.5
V
IF = 10A, -di/dt = 100A/μs
TO-247 Outline
850
ns
VR = 100V, VGS = -10V
∅ P
1
2
3
Note
1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
e
Terminals: 1 - Gate
2 - Drain
3 - Source
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
e
5.20
5.72 0.205 0.225
L
L1
19.81 20.32
4.50
.780 .800
.177
∅P 3.55
3.65
.140 .144
Q
5.89
6.40 0.232 0.252
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
