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IXTY08N100D2-TRL

型号：

IXTY08N100D2-TRL

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

270 K

下载PDF手册
Depletion Mode  
MOSFET  
VDSX = 1000V  
ID(on) > 800mA  
IXTY08N100D2  
IXTA08N100D2  
IXTP08N100D2  
RDS(on) 21  
N-Channel  
D
TO-252 (IXTY)  
G
S
G
D (Tab)  
S
TO-263 AA (IXTA)  
Symbol  
VDSX  
Test Conditions  
Maximum Ratings  
G
S
TJ = 25C to 150C  
1000  
V
D (Tab)  
VGSX  
VGSM  
Continuous  
Transient  
20  
30  
V
V
TO-220AB (IXTP)  
PD  
TC = 25C  
60  
W
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
C  
C  
C  
G
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
D
D (Tab)  
= Drain  
S
Md  
Mounting Torque (TO-220)  
1.13 / 10  
Nm/lb.in.  
G = Gate  
D
S = Source  
Tab = Drain  
Weight  
TO-252  
TO-263  
TO-220  
0.35  
2.50  
3.00  
g
g
g
Features  
• Normally ON Mode  
•International Standard Packages  
• Molding Epoxies Meet UL94V-0  
Flammability Classification  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
1000  
- 2.0  
Typ.  
Max.  
BVDSX  
VGS(off)  
IGSX  
VGS = - 5V, ID = 25A  
VDS = 25V, ID = 25A  
VGS = 20V, VDS = 0V  
VDS = VDSX, VGS= - 5V  
V
V
Advantages  
- 4.0  
• Easy to Mount  
• Space Savings  
• High Power Density  
50 nA  
A  
15 A  
IDSX(off)  
1
TJ = 125C  
Applications  
RDS(on)  
ID(on)  
VGS = 0V, ID = 400mA, Note 1  
VGS = 0V, VDS = 50V, Note 1  
21  
• Audio Amplifiers  
• Start-up Circuits  
• Protection Circuits  
• Ramp Generators  
• Current Regulators  
• Active Loads  
800  
mA  
DS100182C(9/17)  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXTY08N100D2 IXTA08N100D2  
IXTP08N100D2  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 30V, ID = 400mA, Note 1  
VGS = -10V, VDS = 25V, f = 1MHz  
330  
560  
mS  
Ciss  
Coss  
Crss  
325  
24  
pF  
pF  
pF  
6.5  
td(on)  
tr  
td(off)  
tf  
28  
57  
34  
48  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 5V, VDS = 500V, ID = 400mA  
RG = 10(External)  
Qg(on)  
Qgs  
14.6  
1.2  
nC  
nC  
nC  
VGS = 5V, VDS = 500V, ID = 400mA  
Qgd  
8.3  
RthJC  
RthCS  
2.08C/W  
C/W  
TO-220  
0.50  
Safe-Operating-Area Specification  
Characteristic Values  
Symbol  
SOA  
Test Conditions  
Min.  
Typ.  
Max.  
VDS = 800V, ID = 45mA, TC = 75C, Tp = 5s  
36  
W
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
VSD  
IF = 800mA, VGS = -10V, Note 1  
0.8  
1.3  
V
trr  
IRM  
QRM  
1.03  
7.40  
3.80  
μs  
A
μC  
IF = 800mA, -di/dt = 100A/s  
VR = 100V, VGS = -10V  
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTY08N100D2 IXTA08N100D2  
IXTP08N100D2  
Fig. 1. Output Characteristics @ TJ = 25oC  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
V
= 5V  
GS  
V
= 5V  
GS  
2V  
1V  
2V  
1V  
0V  
0V  
- 1V  
- 1V  
- 2V  
- 2V  
0
2
4
6
8
10  
12  
14  
0
10  
20  
30  
40  
50  
60  
70  
80  
VDS - Volts  
VDS - Volts  
Fig. 3. Output Characteristics @ TJ = 125oC  
Fig. 4. Drain Current @ TJ = 25oC  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
1E-01  
1E-02  
1E-03  
1E-04  
1E-05  
1E-06  
1E-07  
1E-08  
V
= 5V  
1V  
GS  
V
= - 3.00V  
- 3.25V  
GS  
0V  
- 3.50V  
- 3.75V  
- 1V  
- 4.00V  
- 4.25V  
- 4.50V  
- 2V  
- 3V  
0
5
10  
15  
20  
25  
30  
0
100 200 300 400 500 600 700 800 900 1000 1100 1200  
VDS - Volts  
VDS - Volts  
Fig. 5. Drain Current @ TJ = 100oC  
Fig. 6. Dynamic Resistance vs. Gate Voltage  
1.E+11  
1.E+10  
1.E+09  
1.E+08  
1.E+07  
1.E+06  
1.E+05  
1.E-01  
1.E-02  
1.E-03  
1.E-04  
1.E-05  
1.E-06  
V
= 700V - 100V  
∆
DS  
VGS = - 3.25V  
- 3.50V  
- 3.75V  
- 4.00V  
T = 25oC  
J
- 4.25V  
- 4.50V  
T = 100oC  
J
0
100 200 300 400 500 600 700 800 900 1000 1100 1200  
VDS - Volts  
-4.6  
-4.4  
-4.2  
-4.0  
-3.8  
-3.6  
-3.4  
-3.2  
-3.0  
-2.8  
VGS - Volts  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXTY08N100D2 IXTA08N100D2  
IXTP08N100D2  
Fig. 8. RDS(on) Normalized to ID = 0.4A Value  
vs. Drain Current  
Fig. 7. Normalized RDS(on) vs. Junction Temperature  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 0V  
V
= 0V  
5V  
GS  
GS  
I
= 0.4A  
D
T
J
= 125oC  
T = 25oC  
J
-50  
-4.0  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 9. Input Admittance  
Fig. 10. Transconductance  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
V
= 30V  
V
= 30V  
DS  
DS  
T
= - 40oC  
J
25oC  
125oC  
T
= 125oC  
J
25oC  
- 40oC  
-3.5  
-3.0  
-2.5  
-2.0  
-1.5  
-1.0  
-0.5  
0.0  
0.5  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
VGS - Volts  
ID - Amperes  
Fig. 11. Breakdown and Threshold Voltages  
vs. Junction Temperature  
Fig. 12. Forward Voltage Drop of Intrinsic Diode  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
V
= -10V  
GS  
VGS(off) @ V = 25V  
DS  
BVDSX@ V = - 5V  
GS  
T
J
= 125oC  
T
J
= 25oC  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
-25  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
VSD - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTY08N100D2 IXTA08N100D2  
IXTP08N100D2  
Fig. 13. Capacitance  
Fig. 14. Gate Charge  
1,000  
100  
10  
5
4
V
= 500V  
DS  
I
I
= 400mA  
= 1mA  
D
G
3
C
C
iss  
2
1
oss  
0
-1  
-2  
-3  
-4  
-5  
C
rss  
= 1 MHz  
5
f
1
0
2
4
6
8
10  
12  
14  
16  
0
10  
15  
20  
25  
30  
35  
40  
VDS - Volts  
QG - NanoCoulombs  
Fig. 15. Forward-Bias Safe Operating Area  
@ TC = 25oC  
Fig. 16. Forward-Bias Safe Operating Area  
@ TC = 75oC  
10.00  
1.00  
0.10  
0.01  
10.00  
1.00  
0.10  
0.01  
R
DS(on)  
Limit  
R
DS(on)  
Limit  
25μs  
25μs  
100μs  
100μs  
1ms  
1ms  
10ms  
100ms  
10ms  
DC  
T = 150oC  
= 75oC  
T
= 150oC  
= 25oC  
J
100ms  
J
DC  
T
C
T
C
Single Pulse  
Single Pulse  
10  
100  
1,000  
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
Fig. 17. Maximum Transient Thermal Impedance  
10  
1
0.1  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_08N100D2(1C)8-25-09  
IXTY08N100D2 IXTA08N100D2  
IXTP08N100D2  
TO-252 AA Outline  
TO-263 Outline  
TO-220 Outline  
A
E
b3  
A
E
E1  
4
c2  
L3  
C2  
A
E
oP  
4
A1  
L1  
D1  
D
H1  
A1  
A2  
Q
L2  
H
H
A1  
L4  
1
2
3
1
2
3
D2  
E1  
D
L1  
b2  
L
c
b
b2  
L3  
c
D1  
1 - Gate  
2,4 - Drain  
3 - Source  
e
e
e
e1  
0.43 [11.0]  
L2  
e1  
0  
0
A2  
5.55MIN  
OPTIONAL  
EJECTOR  
PIN  
0.34 [8.7]  
L1  
0.66 [16.6]  
A2  
L
6.50MIN  
4
1 - Gate  
2,4 - Drain  
3 - Source  
0.20 [5.0]  
0.10 [2.5]  
0.12 [3.0]  
0.06 [1.6]  
6.40  
2.28  
e
c
3X b  
3X b2  
2.85MIN  
1.25MIN  
e1  
BOTTOM  
VIEW  
1 - Gate  
2,4 - Drain  
3 - Source  
LAND PATTERN RECOMMENDATION  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
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