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MYXJ11200-17CAB

型号:

MYXJ11200-17CAB

品牌:

MICROSS[ MICROSS COMPONENTS ]

页数:

4 页

PDF大小:

380 K

Silicon Carbide JFET Normally On  
1200 Volt 17 Amp Hermetic  
MYXJ11200-17CAB  
Product Overview  
Features  
• High voltage 1200V  
Benefits  
• Low on resistance R  
• Voltage controlle
• Low gate charge  
DS(On)  
• High current 17A  
• High temperature 175°C  
• BeO free and RoHS compliant  
• Silicon Carbide (SiC) JFET exhibits low  
• Low intrinsic capacitance  
Figure 1: TO-258  
Applications  
• Harsh environment motor drive  
• Harsh environment inverter  
• Switch power supplies  
on resistance R  
and superior high  
DS(On)  
temperature performance  
• Extremely fast switching  
• Screening options avail
Flange Isolated  
• Power factor correction modules  
• Induction heating  
º
º
º
Commercial high temperature  
In accordance with ML-PRF-19500  
Other options available on request  
• Surface mount  
Pin 1 Pin 2 Pin 3  
• Other packaging options available  
Figure 2: Circuit Diagram  
Absolute Maximum Ratings*  
Symbols  
Parameters  
Values  
1200  
Units  
Volts  
VR  
VGS  
ID  
DC Reverse Voltage  
Gate Source Voltage  
Continuous Drain Current  
-30 to + 3  
17  
Volts  
Amps  
Amps  
IDM  
Pulsed Drain Current (T =10ms, Half Sine Wave)  
50  
p
IFSM  
PD  
TJ & Tstg  
TL  
Surge Peak Forward Current (T =10ms, Half Sine Wave )  
45  
57.7  
Amps  
Watts  
oC  
p
Total Power Dissipation  
Junction Temperature Range & Storage Temperature Range  
Soldering Temperature (Time =5 Seconds)  
-55 to +175  
250  
oC  
Thermal Properties  
Symbols  
Parameters  
Values  
Units  
RθJC  
Thermal Resistance, Junction To Case  
2.6  
oC / Watt  
1
March 2014 Rev 1.0  
Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • sales@micross.com • www.micross.com  
Silicon Carbide JFET Normally On  
1200 Volt 17 Amp Hermetic  
MYXJ11200-17CAB  
Electrical Characteristics  
Symbols  
BVDS  
Parameters  
Test Conditions  
Min  
1200  
-40  
Typ  
Max  
Units  
Drain Source Breakdown  
Gate Source Breakdown  
VGS=-20V, ID=1000µA, TJ=25oC  
VGS=VDS, ID=1mA, TJ=25oC  
VDS=1200V, VGS=-20V, TJ5oC  
VDS=1200V, VGS=-0V, TJ=125oC  
VDS=1200VVGS=-20V, TJ=175oC  
VGS=-20V, TJ=25oC  
1700  
V
V
BVGS  
20  
250  
TBD  
TBD  
100  
100  
100  
70  
µA  
µA  
ID  
Total Drain Leakage Current  
Total Gate Leakage Curre
1
IG  
VGS=-20V, TJ=125oC  
VGS=-20V, TJ=175oC  
VGS=2V, ID=17A, TJ=25oC  
VGS=0V, ID=17A, TJ=25oC  
VGS=2V, ID=17A, TJ=175oC  
VGS=0V, ID=17A, TJ=175oC  
VGS=1V ID=1mA, TJ =25oC  
50  
60  
80  
RDS(On)  
Drain Source On State Resistance  
Gate Threshold Voltage  
m Ω  
TBD  
TBD  
-4  
VG(th)  
Δ Δ ΔVG(th) / ΔTJ  
RG  
-7  
-5.5  
-1.8  
1.5  
V
mV/oC  
Ω
Temp Cofficient of Gate Threshold  
Voltage  
VGS=-20V, ID=250µA  
Gate Resistance  
VGS= 0V, f= 5MHz  
VGS=2.7V, TJ =25oC  
VGS=2.4V, TJ =125oC  
VGS=2.3V, TJ =175oC  
IG(FW)  
Gate Forward Current  
50  
mA  
Charge Characteristics  
Symbols  
CISS  
Parameters  
Test Conditions  
Min  
Typ  
900  
120  
120  
Max  
Units  
Input Capacitance  
COSS  
Output Capacitance  
Reverse Transfer Capacitance  
VDS=100V, VGS=-20V, f=1MHz  
pF  
CRSS  
QG  
Total Gate Charge  
Gate-Drain Charge  
Gate-Source Charge  
106  
82  
9
QGD  
QGS  
VDS= 0V to 960V, VGS=-15V  
nC  
2
March 2014 Rev 1.0  
Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • sales@micross.com • www.micross.com  
Silicon Carbide JFET Normally On  
1200 Volt 17 Amp Hermetic  
MYXJ11200-17CAB  
BA = TO-254  
####### = Batch code  
yyww = Date code  
yy = year  
ww = week  
(Font and text colour is not representative of actual parts produced)  
      
               
  
   
Figure 3: Package Dimensions  
3
March 2014 Rev 1.0  
Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • sales@micross.com • www.micross.com  
Silicon Carbide JFET Normally On  
1200 Volt 17 Amp Hermetic  
MYXJ11200-17CAB  
* Absolute Maximum Ratings Disclaimer  
Stresses greater than the values listed under the Absolute Maximum Ratings table may cause permanent damage to the device. These values are stress  
ratings, functional operation of the device at these or conditions greater than those listed is not implied herein. Exposure to absolute maximum conditions  
for any duration may affect device reliability and operational life.  
Disclaimer  
MICROSS COMPONENTS DO NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED  
HEREIN; NEITHER DO WE CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY MICROSS COM-  
PONENTS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS  
WRITTEN APPROVAL OF MICROSS COMPONENTS.  
As used herein:  
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c)  
whose failure to perform whoperly used in accordance with instructions for use provided in the labelling, can be reasonably expected to result in a  
significant injury to the user. 2A critical component in any component of a life support, device, or system whose failure to perform can be reasonably  
expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.  
Document Title  
Silicon Carbide JFET normally on 1200 Volt 17 Amp Hermetic MYXJ11200-17CAB  
Revision History  
Revision #  
History  
Release Date  
Status  
1.0  
Initial release  
March 2014  
Premilinary  
4
March 2014 Rev 1.0  
Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • sales@micross.com • www.micross.com  
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