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IXTP7N60PM

型号：

IXTP7N60PM

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

111 K

下载PDF手册
Preliminary Technical Information  
PolarTM Power MOSFET  
VDSS = 600V  
ID25 = 4A  
RDS(on) ≤ 1.1Ω  
IXTA7N60PM  
IXTP7N60PM  
(Electrically Isolated Tab)  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
OVERMOLDED TO-220  
(IXTP...M) OUTLINE  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1 MΩ  
600  
600  
V
V
VGSS  
VGSM  
Continuous  
Transient  
± 30  
± 40  
V
V
Isolated Tab  
G
ID25  
IDM  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
4
14  
A
A
D
S
IA  
EAS  
TC = 25°C  
TC = 25°C  
7
400  
A
mJ  
G = Gate  
S = Source  
D = Drain  
dv/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ =150°C  
TC = 25°C  
10  
41  
V/ns  
W
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
°C  
°C  
°C  
Features  
ꢀPlastic overmolded tab for electrical  
isolation  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 s  
300  
260  
°C  
°C  
ꢀInternational standard package  
ꢀAvanlanche rated  
Md  
Mounting torque  
1.13/10 Nm/lb.in.  
ꢀLow package inductance  
- easy to drive and to protect  
Weight  
2.5  
g
Advantages  
ꢀ
Easy to mount  
Space savings  
ꢀ
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
(TJ = 25°C, unless otherwise specified)  
Applications  
BVDSS  
VGS(th)  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 100μA  
600  
V
V
ꢀDC-DC converters  
ꢀBattery chargers  
3.0  
5.5  
ꢀSwitched-mode and resonant-mode  
power supplies  
IGSS  
IDSS  
VGS = ±30V, VDS = 0V  
±100 nA  
ꢀDC choppers  
VDS = VDSS  
VGS = 0V  
5 μA  
50 μA  
ꢀAC motor drives  
TJ = 125°C  
ꢀUninterruptible power supplies  
ꢀHigh speed power switching  
applications  
RDS(on)  
VGS = 10V, ID = 3.5A, Note 1  
1.1  
Ω
© 2008 IXYS CORPORATION, All rights reserved  
DS99950(06/08)  
IXTA7N60PM  
IXTP7N60PM  
Symbol  
gfs  
Test Conditions  
Characteristic Values  
ISOLATED TO-220 (IXTP...M)  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
VDS= 10V, ID = 3.5A, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
Resistive Swithcing Times  
4
7
S
Ciss  
Coss  
Crss  
1180  
pF  
pF  
pF  
110  
11  
td(on)  
tr  
td(off)  
tf  
20  
27  
65  
26  
ns  
ns  
ns  
ns  
VGS = 10V, VDS = 0.5  
ꢀ
VDSS, ID = 7A  
RG = 18Ω (External)  
Qg(on)  
Qgs  
20  
7
nC  
nC  
nC  
VGS= 10V, VDS = 0.5  
ꢀ
VDSS, ID = 3.5A  
Qgd  
7
RthJC  
3.0 °C/W  
Terminals: 1 - Gate  
2 - Drain (Collector)  
3 - Source (Emitter)  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Symbol  
IS  
Test Conditions  
VGS = 0V  
Min.  
Typ.  
Max.  
7
A
A
ISM  
VSD  
trr  
Repetitive, pulse width limited by TJM  
IF = IS, VGS = 0V, Note 1  
28  
1.5  
V
IF = 7A, -di/dt = 100A/μs,  
500  
ns  
VR = 100V, VGS = 0V  
Notes:1. Pulse test, t ≤ 300 μs; duty cycle, d ≤ 2 %.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTA7N60PM  
IXTP7N60PM  
Fig. 1. Output Characteristics  
Fig. 2. Extended Output Characteristics  
@ 25 C  
@ 25 C  
º
º
7
6
5
4
3
2
1
0
14  
12  
10  
8
V
GS  
= 10V  
7V  
V
= 10V  
GS  
7V  
6V  
6
6V  
5V  
4
2
5V  
5
0
0
3
6
9
12  
15  
18  
21  
24  
27  
0
1
2
3
4
6
7
8
VD S - Volts  
V
- Volts  
D S  
Fig. 3. Output Characteristics  
Fig. 4. RDS(on) Normalized to 0.5 ID25 Value  
vs. Junction Temperature  
@ 125 C  
º
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
7
V
GS  
= 10V  
7V  
6
5
4
3
2
1
0
V
= 10V  
GS  
6V  
5V  
I = 7A  
D
I = 3.5A  
D
0
2
4
6
8
10  
12  
14  
16  
-50 -25  
0
25  
50  
75  
100 125 150  
VD S - Volts  
TJ - Degrees Centigrade  
Fig. 6. Drain Current vs. Case  
Temperature  
Fig. 5. RDS(on) Normalized to 0.5 ID25 Value  
vs. ID  
4.5  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
V
= 10V  
GS  
T = 125 C  
º
J
T = 25 C  
º
J
-50  
-25  
0
25  
50  
75  
100 125 150  
0
2
4
6
8
I D - Amperes  
10  
12  
14  
TC - Degrees Centigrade  
© 2008 IXYS CORPORATION, All rights reserved  
IXTA7N60PM  
IXTP7N60PM  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
12  
11  
10  
9
9
8
7
6
5
4
3
2
1
0
T = - 40 C  
º
J
25  
125  
º
C
C
T =125 C  
J
º
25 C  
8
º
º
7
- 40 C  
º
6
5
4
3
2
1
0
0
1
2
3
4
5
6
I D - Amperes  
7
8
9
10  
4.0  
4.5  
5.0 5.5  
VG S - Volts  
6.0  
6.5  
7.0  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
20  
18  
16  
14  
12  
10  
8
V
= 300V  
DS  
I = 3.5A  
D
I
G
= 10mA  
T = 125 C  
º
J
6
T = 25 C  
º
J
4
2
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
0
2
4
6
8 10 12 14 16 18 20 22  
Q G - nanoCoulombs  
VS D - Volts  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
10.00  
10000  
1000  
100  
10  
f = 1MHz  
1.00  
0.10  
0.01  
C
iss  
C
C
oss  
rss  
30  
1
0.0001 0.001  
0.01  
0.1  
1
10  
100  
0
5
10  
15  
20  
VD S - Volts  
25  
35  
40  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: T_7N60P(37)06-17-08-D  
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