TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
6 Lake Street, Lawrence, MA 01841
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Website: http://www.microsemi.com
- High Reliability controlled devices
- Thru hole mounting
500 W Low Capacitance
Transient Voltage Suppressor
- Unidirectional construction
- Selections for 5 V to 50 V standoff voltages (VWM)
LEVELS
M, MA, MX, MXL
DEVICES
MSAC5.0 thru MSAC50, e3
FEATURES
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High reliability controlled devices with wafer fabrication and assembly lot traceability
100 % surge tested devices
Suppresses transients up to 500 W @ 10/1000 µs
Low capacitance rating of 30 pF
Unidirectional low-capacitance device (for bidirectional see Figure 6)
Optional upscreening available by replacing the M prefix with MA, MX or MXL. These prefixes
specify various screening and conformance inspection options based on MIL-PRF-19500.
Refer to MicroNote 129 for more details on the screening options.
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Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B
RoHS Compliant devices available by adding “e3” suffix
DO-41
3σ lot norm screening performed on Standby Current ID
APPLICATIONS / BENEFITS
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Low Capacitance for data-line protection to 10 MHz
Protection for aircraft fast data rate lines up to Level 3 Waveform 4 and Level 1 Waveform 5A
in RTCA/DO-160F (also see MicroNote 130) & ARINC 429 with bit rates of 100 kb/s (per
ARINC 429, Part 1, par 2.4.1.1)
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ESD and EFT protection per IEC61000-4-2 and IEC61000-4-4 respectively
Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance:
Class 1: MSAC5.0 to MSAC50
Class 2: MSAC5.0 to MSAC45
Class 3: MSAC5.0 to MSAC22
Class 4: MSAC5.0 to MSAC10
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Secondary lightning protection per IEC61000-4-5 with 12 Ohms source impedance
Class 1: MSAC5.0 to MSAC26
Class 2: MSAC5.0 to MSAC15
Class 3: MSAC5.0 to MSAC7.0
MAXIMUM RATINGS
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Peak Pulse Power dissipation at 25 °C: 500 W at @ 10/1000 µs with impulse repetition rate
(duty factor) of 0.01 % max*
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Operating and Storage temperature: -65 ºC to +150 °C
Steady-state power dissipation: 2.5 W @ TL = 75 °C (lead Length = 3/8”)
Clamping Speed (0 volts to VBR min.) less than 5 nanoseconds.
Solder temperatures: 260 °C for 10 s (maximum)
* TVS devices are not typically used for dc power dissipation and are instead operated < VWM (rated standoff
voltage) except for transients that briefly drive the device into avalanche breakdown (VBR to VC region) of the
TVS element.
Also see Figures 5 and 6 for further protection details in rated peak pulse power for
unidirectional and bidirectional configurations respectively
RF01018 Rev A, October 2010
High Reliability Product Group
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