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IXTK160N20

型号：

IXTK160N20

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

565 K

下载PDF手册
Advance Technical Information  
IXTK 160N20  
VDSS = 200 V  
High Current  
MegaMOSTMFET  
ID25  
= 160 A  
RDS(on) = 13 mΩ  
N-Channel Enhancement Mode  
Symbol  
Testconditions  
Maximum ratings  
TO-264AA(IXTK)  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1.0 MΩ  
200  
200  
V
V
VGS  
Continuous  
Transient  
±20  
±30  
V
V
VGSM  
D (TAB)  
G
ID25  
ID(RMS)  
IDM  
T
= 25°C MOSFET chip capability  
160  
75  
A
ECxternal lead current limit  
A
A
A
D
S
T
= 25°C, pulse width limited by TJM  
640  
90  
IAR  
TCC = 25°C  
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
EAR  
EAS  
T
= 25°C  
80  
4.0  
mJ  
J
TCC = 25°C  
dv/dt  
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS  
TJ ≤ 150°C, RG = 2 Ω  
5
V/ns  
PD  
TJ  
TC = 25°C  
730  
W
-55 ... +150  
°C  
TJM  
Tstg  
150  
-55 ... +150  
°C  
°C  
Features  
TL  
1.6 mm (0.063 in.) from case for 10 s  
Mountingtorque  
300  
0.7/6  
10  
°C  
Nm/lb.in.  
g
•Low R  
HDMOSTM process  
•RuggeDdSp(oonl)ysilicongatecellstructure  
•Internationalstandardpackage  
•Fastswitchingtimes  
Md  
Weight  
TO-264  
Applications  
Symbol Test Conditions  
Characteristic Values  
•Motorcontrols  
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
•DC choppers  
•Switched-mode power supplies  
VDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 1 mA  
200  
V
V
Advantages  
VDS = VGS, ID = 250 µA  
VGS = ±20 V DC, VDS = 0  
2.0  
4.0  
±200 nA  
•Easy to mount with one screw  
(isolatedmountingscrewhole)  
•Space savings  
IDSS  
VDS = V  
T = 25°C  
50 µA  
3 mA  
VGS = 0 DVSS  
TJJ = 125°C  
•High power density  
RDS(on)  
VGS = 10 V, I = 0.5 I  
13 mΩ  
Pulse test, t ≤D300 msD,2d5 uty cycle d ≤ 2%  
© 2004 IXYS All rights reserved  
DS99014A(01/04)  
IXTK 160N20  
Symbol  
Test Conditions  
Characteristic values  
Min. Typ. Max.  
TO-264 AA Outline  
(TJ = 25°C unless otherwise specified)  
gfs  
VDS = 10 V; ID = 0.5 ID25, pulse test  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
75  
95  
S
Ciss  
Coss  
Crss  
12900  
2220  
730  
pF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
30  
38  
150  
30  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
RG = 1.0 Ω (External)  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min.  
Max.  
A
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.190  
.202  
.114  
.083  
A1  
.100  
Qg(on)  
Qgs  
415  
63  
200  
nC  
nC  
nC  
A2  
.079  
b
1.12  
2.39  
2.90  
0.53  
25.91  
19.81  
5.46BSC  
0.00  
0.00  
1.42  
2.69  
3.09  
0.83  
26.16  
19.96  
.044  
.094  
.114  
.021  
1.020  
.780  
.215BSC  
.000  
.000  
.056  
.106  
.122  
.033  
1.030  
.786  
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
b1  
b2  
c
D
E
e
J
K
Qgd  
RthJC  
RthCK  
0.17 K/W  
K/W  
0.15  
0.25  
0.25  
.010  
.010  
L
L1  
20.32  
2.29  
20.83  
2.59  
.800  
.090  
.820  
.102  
P
3.17  
3.66  
.125  
.144  
Q
Q1  
6.07  
8.38  
6.27  
8.69  
.239  
.330  
.247  
.342  
R
R1  
3.81  
1.78  
4.32  
2.29  
.150  
.070  
.170  
.090  
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
Source-Drain Diode  
Ratings and Characteristics  
(TJ = 25°C unless otherwise specified)  
Symbol  
IS  
Test Conditions  
Min.  
Typ.  
Max.  
VGS = 0V  
160  
A
A
V
ISM  
Repetitive; pulse width limited by TJM  
640  
1.5  
VSD  
IF = IS, VGS = 0 V,  
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
trr  
IF = 25A, -di/dt = 100 A/µs, VR = 100V  
250  
3
ns  
Qrr  
µC  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343  
IXTK 160N20  
Fig. 2. Extended Output Characteristics  
Fig. 1. Output Characteristics  
@ 25  
@ 25ºC  
º
C
160  
140  
120  
100  
80  
320  
280  
240  
200  
160  
120  
80  
VGS = 10V  
V
GS  
= 10V  
8V  
9V  
8V  
7V  
7V  
60  
6V  
6V  
5V  
40  
20  
5V  
40  
0
0
0
1
2
3
4
5
6
7
8
0
0.4  
0.8  
1.2  
1.6  
2
VD S - Volts  
VD S - Volts  
Fig. 3. Output Characteristics  
@ 125  
Fig. 4. RDS(on Normalized to 0.5 ID25  
Value vs. Junction Temperature  
)
ºC  
160  
2.6  
2.4  
2.2  
2
VGS = 10V  
VGS = 10V  
9V  
8V  
7V  
140  
120  
100  
80  
1.8  
1.6  
1.4  
1.2  
1
6V  
ID = 160A  
60  
ID = 80A  
40  
5V  
20  
0.8  
0.6  
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
-50  
-25  
0
25  
50  
75  
100 125 150  
VD S - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to  
0.5 ID25 Value vs. ID  
Fig. 6. Drain Current vs. Case  
Temperature  
2.6  
2.4  
2.2  
2
180  
VGS = 10V  
160  
140  
120  
100  
80  
TJ = 125ºC  
1.8  
1.6  
1.4  
1.2  
1
60  
40  
TJ = 25ºC  
20  
0
0.8  
-50 -25  
0
25  
50  
75  
100 125 150  
0
40  
80  
120 160 200 240 280 320  
I D - Amperes  
TC - Degrees Centigrade  
© 2004 IXYS All rights reserved  
IXTK 160N20  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
200  
180  
160  
140  
120  
100  
80  
160  
140  
120  
100  
80  
TJ = -40ºC  
25ºC  
125ºC  
60  
TJ = 125ºC  
60  
40  
25ºC  
-40ºC  
40  
20  
20  
0
0
3.5  
4
4.5  
5
5.5  
6
6.5  
1.5  
40  
0
0
1
20 40 60 80 100 120 140 160 180 200  
VG S - Volts  
I D - Amperes  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
320  
280  
240  
200  
160  
120  
80  
VDS = 100V  
ID = 80A  
IG = 10mA  
TJ = 125ºC  
40  
TJ = 25ºC  
0
0.3  
0.5  
0.7  
0.9  
1.1  
1.3  
50 100 150 200 250 300 350 400 450  
VS D - Volts  
Q G - nanoCoulombs  
Fig. 12. Forward-Bias  
Safe Operating Area  
Fig. 11. Capacitance  
100000  
10000  
1000  
1000  
100  
10  
f = 1MHz  
C
iss  
RDS(on) Limit  
25µs  
1ms  
100µs  
C
oss  
10ms  
DC  
C
rss  
TJ = 150ºC  
TC = 25ºC  
100  
0
5
10  
15  
20  
25  
30  
35  
10  
100  
1000  
VD S - Volts  
VD S - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343  
IXTK 160N20  
Fig. 13. M axim um Trans ie nt The rm al Re s is tance  
0.18  
0.16  
0.14  
0.12  
0.10  
0.08  
0.06  
0.04  
0.02  
0.00  
1
10  
100  
1000  
Pulse Width - milliseconds  
© 2004 IXYS All rights reserved  
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