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IXTP24P085T

型号：

IXTP24P085T

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

198 K

下载PDF手册
TrenchPTM  
Power MOSFETs  
IXTA24P085T  
IXTP24P085T  
VDSS = - 85V  
ID25 = - 24A  
RDS(on)  
≤
65mΩ  
P-Channel Enhancement Mode  
Avalanche Rated  
TO-263 AA (IXTA)  
G
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
D (Tab)  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
- 85  
- 85  
V
V
VDGR  
TO-220AB (IXTP)  
VGSS  
VGSM  
Continuous  
Transient  
±15  
±25  
V
V
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
- 24  
- 80  
A
A
G
D
S
D (Tab)  
= Drain  
IA  
EAS  
TC = 25°C  
TC = 25°C  
- 24  
200  
A
G = Gate  
S = Source  
D
mJ  
Tab = Drain  
PD  
TC = 25°C  
83  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features  
z International Standard Packages  
z Avalanche Rated  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
z Extended FBSOA  
Md  
Mounting Torque (TO-220)  
1.13/10  
Nm/lb.in.  
z Fast Intrinsic Diode  
z
Weight  
TO-220  
TO-263  
3.0  
2.5  
g
g
Low RDS(ON) and QG  
Advantages  
z
Easy to Mount  
Space Savings  
High Power Density  
z
z
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
Applications  
(TJ = 25°C, Unless Otherwise Specified)  
z
High-Side Switching  
Push Pull Amplifiers  
DC Choppers  
Automatic Test Equipment  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = - 250μA  
VDS = VGS, ID = - 250μA  
VGS = ±15V, VDS = 0V  
VDS = VDSS, VGS = 0V  
- 85  
- 2.5  
V
V
z
z
- 4.5  
z
±50 nA  
z
Current Regulators  
z
IDSS  
- 3 μA  
-100 μA  
Battery Charger Applications  
TJ = 125°C  
RDS(on)  
VGS = -10V, ID = 0.5 • ID25, Note 1  
65 mΩ  
DS99969B(01/13)  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXTA24P085T  
IXTP24P085T  
Symbol  
Test Conditions  
Characteristic Values  
TO-263 Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = -10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = - 25V, f = 1MHz  
10  
16  
S
Ciss  
Coss  
Crss  
2090  
243  
pF  
pF  
pF  
117  
td(on)  
tr  
td(off)  
tf  
18  
26  
53  
26  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 10Ω (External)  
Pins:  
1 - Gate  
2,4 - Drain  
3 - Source  
Qg(on)  
Qgs  
41  
17  
11  
nC  
nC  
nC  
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
RthJC  
RthCS  
1.5 °C/W  
°C/W  
TO-220  
0.50  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
- 24  
- 96  
-1.5  
IS  
VGS = 0V  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = - 24A, VGS = 0V, Note 1  
TO-220 Outline  
trr  
QRM  
IRM  
40  
72  
- 3.6  
ns  
nC  
A
IF = -12A, -di/dt = -100A/μs  
VR = - 43V, VGS = 0V  
Note  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
Pins: 1 - Gate  
3 - Source  
2 - Drain  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTA24P085T  
IXTP24P085T  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
-24  
-20  
-16  
-12  
-8  
-100  
-90  
-80  
-70  
-60  
-50  
-40  
-30  
-20  
-10  
0
VGS = -10V  
VGS = -10V  
- 9V  
- 9V  
- 8V  
- 8V  
- 7V  
- 7V  
- 6V  
- 6V  
- 5V  
-4  
- 5V  
0
0
-2  
-4  
-6  
-8  
-10  
-12  
-14  
-16  
-18  
-20  
0
-0.2  
-0.4  
-0.6  
-0.8  
-1  
-1.2  
-1.4  
-1.6  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = -12A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
-24  
-20  
-16  
-12  
-8  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
VGS = -10V  
- 9V  
- 8V  
VGS = -10V  
I D = - 24A  
- 7V  
- 6V  
I D = -12A  
- 5V  
-4  
0
0
-0.2 -0.4 -0.6 -0.8  
-1  
-1.2 -1.4 -1.6 -1.8  
-2  
-2.2 -2.4  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = -12A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
-28  
-24  
-20  
-16  
-12  
-8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
VGS = -10V  
TJ = 125ºC  
TJ = 25ºC  
-4  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
-12  
-24  
-36  
-48  
-60  
-72  
-84  
TC - Degrees Centigrade  
ID - Amperes  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXTA24P085T  
IXTP24P085T  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
-36  
-32  
-28  
-24  
-20  
-16  
-12  
-8  
28  
24  
20  
16  
12  
8
TJ = - 40ºC  
25ºC  
125ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
4
-4  
0
0
-3.0  
-3.5  
-4.0  
-4.5  
-5.0  
-5.5  
-6.0  
-6.5  
-1.4  
-40  
0
-4  
-8  
-12  
-16  
-20  
-24  
-28  
-32  
-36  
-40  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
-70  
-60  
-50  
-40  
-30  
-20  
-10  
0
-10  
-9  
-8  
-7  
-6  
-5  
-4  
-3  
-2  
-1  
0
VDS = - 43V  
I
I
D = -12A  
G = -1mA  
TJ = 125ºC  
TJ = 25ºC  
-0.4  
-0.5  
-0.6  
-0.7  
-0.8  
-0.9  
-1.0  
-1.1  
-1.2  
-1.3  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
100µs  
25µs  
100  
-
10,000  
1,000  
100  
1ms  
RDS(on) Limit  
= 1 MHz  
f
10ms  
100ms  
C
iss  
10  
-
C
oss  
TJ = 150ºC  
C = 25ºC  
Single Pulse  
T
C
rss  
1
-
0
-5  
-10  
-15  
-20  
-25  
-30  
-35  
1
10  
100  
-
-
-
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTA24P085T  
IXTP24P085T  
Fig. 14. Resistive Turn-on Rise Time vs.  
Drain Current  
Fig. 13. Resistive Turn-on Rise Time vs.  
Junction Temperature  
30  
29  
28  
27  
26  
25  
24  
23  
22  
29  
28  
27  
26  
25  
24  
23  
RG = 10Ω, VGS = -10V  
VDS = - 43V  
TJ = 125ºC  
RG = 10Ω, VGS = -10V  
I D = -12A  
VDS = - 43V  
TJ = 25ºC  
I D = - 24A  
-12  
-13  
-14  
-15  
-16  
-17  
-18  
-19  
-20  
-21  
-22  
-23  
-24  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on Switching Times vs.  
Gate Resistance  
Fig. 16. Resistive Turn-off Switching Times vs.  
Junction Temperature  
120  
26  
29  
58  
54  
50  
46  
42  
38  
34  
30  
t r  
td(on) - - - -  
t f  
t
d(off) - - - -  
28  
27  
26  
25  
24  
23  
22  
100  
80  
60  
40  
20  
0
24  
22  
20  
18  
16  
14  
TJ = 125ºC, VGS = -10V  
VDS = - 43V  
RG = 10Ω, VGS = -10V  
VDS = - 43V  
I D = - 24A, -12A  
I D = -12A  
I D = - 24A  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
10  
12  
14  
16  
18  
20  
22  
24  
26  
28  
30  
32  
34  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 17. Resistive Turn-off Switching Times vs.  
Drain Current  
Fig. 18. Resistive Turn-off Switching Times vs.  
Gate Resistance  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
110  
30  
29  
28  
27  
26  
25  
24  
23  
22  
58  
100  
90  
80  
70  
60  
50  
40  
30  
20  
t f  
t
d(off) - - - -  
54  
50  
46  
42  
38  
34  
30  
26  
t f  
td(off) - - - -  
TJ = 125ºC, VGS = -10V  
VDS = - 43V  
RG = 10Ω, VGS = - 10V  
VDS = - 43V  
I D = -12A, - 24A  
TJ = 125ºC, 25ºC  
-12 -13 -14 -15 -16 -17 -18 -19 -20 -21 -22 -23 -24  
ID - Amperes  
10  
12  
14  
16  
18  
20  
22  
24  
26  
28  
30  
32  
34  
RG - Ohms  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXTA24P085T  
IXTP24P085T  
Fig. 19. Maximum Transient Thermal Impedance  
10  
1
0.1  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: T_24P085T(A1)11-05-10-A  
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