IXTA10N60P
IXTP10N60P
Symbol
Test Conditions
Characteristic Values
Min. Typ. Max.
TO-263 Outline
(TJ = 25°C, Unless Otherwise Specified)
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
6
11
S
Ciss
Coss
Crss
1720
160
14
pF
pF
pF
td(on)
tr
td(off)
tf
23
27
65
21
ns
ns
ns
ns
Resistive Switching Time
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 10Ω (External)
Qg(on)
Qgs
32
12
10
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
RthCH
0.62 °C/W
°C/W
TO-220
0.50
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min. Typ.
Max.
IS
VGS = 0V
10
A
A
ISM
VSD
trr
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
30
TO-220 Outline
1.5
V
IF = 10A, VGS = 0V
500
ns
-di/dt = 100A/μs, VR = 100V
Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. On through-hole packages, RDS(on) Kelvin test contact
location must be 5mm or less from the package body.
Pins: 1 - Gate
2 - Drain
3 - Source
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
