VTO-1990-SMD and 2150-SMD October 2001 Preliminary
Specificat ion is subject t o change wit hout prior not ificat ion
Voltage Controlled Oscillator
VTO-1990-SMD
VTO-2150-SMD
_____________________
Feat ures
Applications
· Operat ing frequency:
19.90656 or 21.5092 GHz
· 5 Volt Operation
General Description
· Transmitter and Receiver
Subsystems for OC-768 /
STM-256 Applications
The VTO-1990-SMD and the
VTO-2150-SMD provide a low
jitter source as a key
· Differential Output
· 20 GHz Source
· Output Power ( 50 O
component for the data re-
timing in the transmitter
subsystem and clock and data
recovery in the receiver of the
40 Gb fiber optic systems for
Sonet and FEC applications.
Load) : 0 dBm Minimum
· Modulation Sensitivity: 20
t o 40 MHz/V
· Tuning Volt age 0 t o 5
Volt s
· Low J itter ( Less than 50
femto seconds from 50
KHz t o 80 MHz)
The oscillator uses an
extremely high performance
low noise Agilent Silicon
Bipolar transistor in
conjunction with a hyperabrupt
varactor diode to provide the
tuning capability. The
· Frequency Drift over 0°C to
+75°C: +/- 50 MHz
· 0.682 x 0.450 x 0.160
inches SMT Leadless
Bondable Package
oscillator output is then
coupled to an Agilent GaAs
PHEMT MMIC amplifier and
MMIC multiplier to double the
frequency. Finally the signal is
split to provide a differential
output at 19.906 or 21.509 GHz.
Functional Block diagram
X2
Splitter
Output
VTO-1990-SMD & VTO-2150-SMD Absolute Maximum Ratings1
Paramet er
Units
Ratings
Positive Supply Voltage
Tuning Voltage
V
V
0 to +6
0 to +6
0 to +85
Operating Temperature
C°
C°
Storage Temperature
-40 to +130
Operation of this device in excess of any of these limits may cause permanent damage.
Note: 1
