VCES
IC25 VCE(sat)
Low VCE(sat) IGBT with Diode
High Speed IGBT with Diode
IXSH30N60U1
IXSH30N60AU1
600V 50 A 2.5V
600V 50 A 3.0V
CombiPacks
Short Circuit SOA Capability
TO-247 AD
Symbol
TestConditions
MaximumRatings
VCES
VCGR
TJ = 25°C to 150°C
600
600
V
V
TJ = 25°C to 150°C; RGE = 1 MW
VGES
VGEM
Continuous
Transient
±20
±30
V
V
G
C
E
IC25
IC90
ICM
TC = 25°C
50
30
A
A
A
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
TC = 90°C
TC = 25°C, 1 ms
100
SSOA
(RBSOA)
VGE= 15 V, TJ = 125°C, RG = 33 W
Clamped inductive load, L = 100 mH
ICM = 60
@ 0.8 VCES
A
Features
tSC
(SCSOA)
VGE= 15 V, VCE = 360 V, TJ = 125°C
RG = 33 W, non repetitive
10
ms
W
• Internationalstandardpackage
JEDEC TO-247 AD
• High frequency IGBT with guaranteed
Short Circuit SOA capability
• IGBT and anti-parallel FRED in one
package
PC
TC = 25°C
200
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
• 2nd generation HDMOSTM process
• Low VCE(sat)
-55 ... +150
Md
Mountingtorque
1.13/10 Nm/lb.in.
- for low on-state conduction losses
• MOS Gate turn-on
- drive simplicity
Weight
6
g
Maximumleadtemperatureforsoldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptiblepowersupplies(UPS)
• Switch-modeandresonant-mode
powersupplies
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BVCES
VGE(th)
IC = 750 mA, VGE = 0 V
600
5
V
V
IC = 2.5 mA, VCE = VGE
8
Advantages
ICES
VCE = 0.8 • VCES
VGE = 0 V
TJ = 25°C
TJ = 125°C
500 mA
mA
8
• Space savings (two devices in one
package)
• Easy to mount with 1 screw
(isolatedmountingscrewhole)
• Reduces assembly time and cost
• High power density
IGES
VCE = 0 V, VGE = ±20 V
±100 nA
VCE(sat)
IC = IC90, VGE = 15 V
30N60U1
30N60AU1
2.5
3.0
V
V
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
92714F(12/96)
1 - 6
