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2SK3396

型号:

2SK3396

描述:

硅n沟道FET的结[ Silicon N-Channel Junction FET ]

品牌:

PANASONIC[ PANASONIC ]

页数:

3 页

PDF大小:

72 K

Silicon Junction FETs (Small Signal)  
2SK3396  
Silicon N-Channel Junction FET  
Unit: mm  
For impedance conversion in low frequency  
For infrared sensor  
+0.05  
–0.02  
+0.05  
0.33  
0.10  
–0.02  
3
Features  
Low gate-source cutoff current IGSS  
+0.05  
1
2
0.23  
–0.02  
(0.40)(0.40)  
Small capacitance of short-circuit forward transfer capacitance  
(common source) Ciss , short-circuit output capacitance (common  
source) Coss , reverse transfer capacitance (common source) Crss  
0.80 0.05  
1.20 0.05  
5°  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Gate-drain voltage (Source open)  
Gate-source voltage (Drain open)  
Gate current  
Symbol  
VGDO  
VGSO  
IG  
Rating  
Unit  
V
40  
1: Source  
2: Drain  
3: Gate  
40  
V
10  
mA  
mA  
mW  
°C  
SSSMini3-F1 Package  
Drain current  
ID  
1
100  
Marking Symbol: EB  
Power dissipation  
PD  
Channel temperature  
Storage temperature  
Tch  
125  
Tstg  
55 to +125  
°C  
Electrical Characteristics Ta = 25°C 3°C  
Parameter  
Gate-drain surrender voltage  
Drain-source cutoff current  
Gate-source cutoff current  
Forward transfer admittance  
Gate-source cutoff voltage  
Symbol  
VGDS  
IDSS  
Conditions  
Min  
40  
30  
Typ  
Max  
Unit  
V
IG = −10 µA, VDS = 0  
VDS = 10 V, VGS = 0  
200  
µA  
nA  
mS  
V
IGSS  
VGS = −20 V, VDS = 0  
0.5  
Yfs  
VGSC  
Ciss  
VDS = 10 V, VGS = 0, f = 1 kHz  
VDS = 10 V, ID = 1 µA  
0.05  
1.3  
3.0  
Short-circuit forward transfer capacitance  
(Common source)  
VDS = 10 V, VGS = 0, f = 1 MHz  
1.0  
pF  
Short-circuit output capacitance  
(Common source)  
Coss  
Crss  
VDS = 10 V, VGS = 0, f = 1 MHz  
VDS = 10 V, VGS = 0, f = 1 MHz  
0.4  
0.4  
pF  
pF  
Reverse transfer capacitance  
(Common source)  
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
Publication date: July 2003  
SJF00036AED  
1
2SK3396  
PD Ta  
ID VDS  
ID VGS  
120  
100  
80  
0.14  
0.12  
0.10  
0.08  
0.06  
0.04  
0.02  
0
0.10  
0.08  
0.06  
0.04  
0.02  
0
Ta = 25°C  
VDS = 10 V  
Ta = −25°C  
25°C  
VGS = 2.5 V  
2.4 V  
2.3 V  
60  
2.2 V  
2.1 V  
85°C  
40  
2.0 V  
20  
0
0
40  
80  
120  
0
1.2  
2
4
6
8
10  
12  
−1.0 − 0.8 0.6 0.4 0.2  
0
Ambient temperature Ta (°C)  
Drain-source voltage VDS (V)  
Gate-source voltage VGS (V)  
Yfs  VGS  
Yfs  ID  
0.12  
0.10  
0.08  
0.06  
0.04  
0.02  
0
0.12  
0.10  
0.08  
0.06  
0.04  
0.02  
0
VDS = 10 V  
Ta = 25°C  
VDS = 10 V  
Ta = 25°C  
2.5  
2.0  
1.5  
1.0 0.5  
0
0
20 30 40 50 60 70 80  
Gate-source voltage VGS (V)  
Drain current ID (µA)  
SJF00036AED  
2
Request for your special attention and precautions in using the technical information  
and semiconductors described in this material  
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government  
if any of the products or technologies described in this material and controlled under the "Foreign  
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.  
(2) The technical information described in this material is limited to showing representative characteris-  
tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-  
tual property right or any other rights owned by our company or a third party, nor grants any license.  
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the  
product or technologies as described in this material.  
(4) The products described in this material are intended to be used for standard applications or general  
electronic equipment (such as office equipment, communications equipment, measuring instru-  
ments and household appliances).  
Consult our sales staff in advance for information on the following applications:  
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,  
combustion equipment, life support systems and safety devices) in which exceptional quality and  
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or  
harm the human body.  
Any applications other than the standard applications intended.  
(5) The products and product specifications described in this material are subject to change without  
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of  
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that  
the latest specifications satisfy your requirements.  
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-  
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-  
wise, we will not be liable for any defect which may arise later in your equipment.  
Even when the products are used within the guaranteed values, take into the consideration of  
incidence of break down and failure mode, possible to occur to semiconductor products. Measures  
on the systems such as redundant design, arresting the spread of fire or preventing glitch are  
recommended in order to prevent physical injury, fire, social damages, for example, by using the  
products.  
(7) When using products for which damp-proof packing is required, observe the conditions (including  
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets  
are individually exchanged.  
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written  
permission of Matsushita Electric Industrial Co., Ltd.  
2002 JUL  
厂商 型号 描述 页数 下载

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2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス - 小信号FET - 接合形FET ] 3 页

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2SK0065P 晶体管| JFET | N沟道| 12V V( BR ) DSS | 40uA的我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

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2SK0065Q 晶体管| JFET | N沟道| 12V V( BR ) DSS | 150UA我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

PANASONIC

2SK0123 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

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2SK0198P [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

PANASONIC

2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

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