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IXTT10N100D

型号：

IXTT10N100D

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

7 页

PDF大小：

290 K

下载PDF手册
VDSX = 1000V  
ID25 = 10A  
RDS(on) 1.4  
High Voltage  
MOSFET  
IXTH10N100D  
IXTT10N100D  
N-Channel, Depletion Mode  
TO-268 (IXTT)  
G
Symbol  
VDSX  
Test Conditions  
Maximum Ratings  
S
D (Tab)  
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
1000  
1000  
V
V
VDGX  
VGSX  
VGSM  
Continuous  
Transient  
30  
40  
V
V
TO-247 (IXTH)  
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
10  
20  
A
A
G
PD  
TC = 25C  
400  
W
D
D (Tab)  
S
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
C  
C  
C  
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Md  
Mounting Torque (TO-247)  
1.13 / 10  
Nm/lb.in.  
Weight  
TO-268  
TO-247  
4
6
g
g
Features  
• Normally ON Mode  
•International Standard Packages  
• Molding Epoxies meet UL94V-0  
Flammability Classification  
Symbol  
Test Conditions  
Characteristic Values  
Advantages  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
1000  
-1.5  
Typ.  
Max.  
BVDSX  
VGS(off)  
IGSX  
VGS = -10V, ID = 250A  
VDS = 25V, ID = 250A  
VGS = 30V, VDS = 0V  
VDS = VDSX, VGS = -10V  
V
V
• Easy to Mount  
• Space Savings  
• High Power Density  
- 3.5  
100 nA  
25 A  
IDSX(off)  
Applications  
TJ = 125C  
500 A  
• Level Shifting  
• Triggers  
RDS(on)  
ID(on)  
VGS = 10V, ID = 10A, Note 1  
VGS = 0V, VDS = 25V, Note 1  
1.4  
• Solid State Relays  
• Current Regulators  
• Active Load  
1.0  
A
DS99529D(8/17)  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXTT10N100D  
IXTH10N100D  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 30V, ID = 0.5 • ID25, Note 1  
VGS = -10V, VDS = 25V, f = 1MHz  
3.0  
5.4  
S
Ciss  
Coss  
Crss  
2500  
pF  
pF  
pF  
300  
100  
td(on)  
tr  
td(off)  
tf  
35  
85  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = -10V, VDS = 0.5 • VDSX, ID = 0.5 • ID25  
RG = 4.7(External)  
110  
75  
Qg(on)  
Qgs  
130  
27  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSX, ID = 0.5 • ID25  
Qgd  
58  
RthJC  
RthCS  
0.31C/W  
C/W  
TO-247  
0.21  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
VSD  
trr  
IF = ID25, VGS = -10V, Note 1  
1.1  
1.5  
V
IF = 10A, -di/dt = 100A/s  
VR = 100V, VGS = -10V  
850  
ns  
Note  
1: Pulse test, t 300s, duty cycle, d 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTT10N100D  
IXTH10N100D  
Fig. 1. Output Characteristics @ TJ = 25oC  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
10  
9
8
7
6
5
4
3
2
1
0
20  
18  
16  
14  
12  
10  
8
V
= 5V  
GS  
V
= 5V  
4V  
GS  
4V  
3V  
3V  
2V  
1V  
2V  
1V  
6
4
2
0V  
-1V  
0V  
- 1V  
0
0
2
4
6
8
10  
12  
14  
30  
20  
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 5A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125oC  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
10  
9
8
7
6
5
4
3
2
1
0
V
= 5V  
GS  
V
= 10V  
GS  
4V  
3V  
I
= 10A  
D
2V  
1V  
I
= 5A  
D
0V  
-1V  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
5
10  
15  
20  
25  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 5A Value  
vs. Drain Current  
Fig. 6. Maximum Drain Current vs. Case Temperature  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
10  
8
V
= 10V  
GS  
T
J
= 125oC  
6
4
T
J
= 25oC  
2
0
0
2
4
6
8
10  
12  
14  
16  
18  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TC - Degrees Centigrade  
ID - Amperes  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXTT10N100D  
IXTH10N100D  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
10  
9
8
7
6
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
T
J
= - 40oC  
25oC  
125oC  
T
J
= 125oC  
25oC  
- 40oC  
-2.0  
-1.5  
-1.0  
-0.5  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
0
1
2
3
4
5
6
7
8
9
10  
VGS - Volts  
ID - Amperes  
Fig. 10. Breakdown & Threshold Voltages  
vs. Junction Temperature  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
30  
25  
20  
15  
10  
5
1.5  
V
= -10V  
GS  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
V
@ V = 25V  
DS  
GS(off)  
BV  
@ V = -10V  
GS  
DSS  
T
J
= 125oC  
T
J
= 25oC  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
1.3  
1.4  
VSD - Volts  
TJ - Degrees Centigrade  
Fig. 11. Gate Charge  
Fig. 12. Capacitance  
10  
8
10,000  
1,000  
100  
f
= 1 MHz  
V
= 500V  
DS  
C
iss  
I
I
= 5A  
D
G
= 10mA  
6
4
C
oss  
2
0
C
-2  
-4  
-6  
rss  
10  
0
20  
40  
60  
80  
100  
120  
140  
0
5
10  
15  
20  
25  
30  
35  
40  
QG - NanoCoulombs  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTT10N100D  
IXTH10N100D  
Fig. 13. Forward-Bias Safe Operating Area  
@ TC = 25oC  
Fig. 14. Forward-Bias Safe Operating Area  
@ TC = 75oC  
100  
10  
1
100  
10  
1
T = 150oC  
T = 150oC  
J
J
= 75oC  
T
= 75oC  
T
C
C
Single Pulse  
Single Pulse  
R
Limit  
DS(on)  
R
Limit  
DS(on)  
25μs  
25μs  
100μs  
100μs  
1ms  
1ms  
10ms  
10ms  
100ms  
DC  
100ms  
DC  
0.1  
0.1  
10  
100  
1,000  
10,000  
10  
1
100  
1,000  
10,000  
VDS - Volts  
VDS - Volts  
Fig. 15. Maximum Transient Thermal Impedance  
0.1  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_10N100D(7N)12-10-12-C  
IXTT10N100D  
IXTH10N100D  
TO-220 Outline  
1 - Gate  
2,4 - Drain  
3 - Source  
TO-247 Outline  
1 - Gate  
2,4 - Drain  
3 - Source  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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