IXTH 24P20
IXTT 24P20
TO-247 (IXTH) Outline
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = -10 V; ID = ID25, pulse test
10
15
S
1
2
3
Ciss
Coss
Crss
4200
830
pF
pF
pF
VGS = 0 V, VDS = -25 V, f = 1 MHz
350
td(on)
tr
td(off)
tf
36
29
68
28
ns
ns
ns
ns
VGS = -10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Terminals: 1 - Gate
2 - Drain
3 - Source
Tab - Drain
RG = 4.7 Ω (External)
Dim.
Millimeter
Min.
Inches
Max.
Min. Max.
A
A12
4.7
2.2
2.2
1.0
1.65
2.87
5.3
2.54
2.6
1.4
2.13
3.12
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
Qg(on)
Qgs
150
40
nC
nC
nC
A
VGS = -10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
b
Qgd
70
b
b12
RthJC
RthCS
0.42
K/W
K/W
C
D
E
.4
.8
20.80 21.46
15.75 16.26
(TO-247)
0.25
e
5.20
5.72 0.205 0.225
L
19.81 20.32
4.50
.780 .800
.177
L1
∅P 3.55
3.65
.140 .144
Q
5.89
4.32
6.40 0.232 0.252
R
S
5.49
.170 .216
242 BSC
6.15 BSC
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-268 (IXTT) Outline
Symbol
TestConditions
IS
VGS = 0
-24
-96
-3
A
ISM
VSD
Repetitive; pulse width limited by TJM
A
V
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr
IF = IS, di/dt = 100 A/µs, VR = -50 V
250
ns
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered by
oneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728 B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478B2
