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IXTN8N150L

型号：

IXTN8N150L

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

6 页

PDF大小：

152 K

下载PDF手册
Linear Power MOSFET  
w/Extended FBSOA  
VDSS  
ID25  
RDS(on) ≤ 3.6Ω  
= 1500V  
= 7.5A  
IXTN8N150L  
D
S
N-Channel Enhancement Mode  
Guaranteed FBSOA  
G
S
miniBLOC, SOT-227 B  
E153432  
S
G
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
1500  
1500  
V
V
VDGR  
TJ = 25°C to 150°C, RGS = 1MΩ  
S
VGSS  
VGSM  
Continuous  
Transient  
±30  
±40  
V
V
D
ID25  
IDM  
TC = 25°C  
7.5  
20  
A
A
G = Gate  
S = Source  
D = Drain  
S = Source  
TC = 25°C, Pulse Width Limited by TJM  
PD  
TC = 25°C  
545  
W
TJ  
-55 to +150  
150  
°C  
°C  
°C  
Features  
TJM  
Tstg  
-55 to +150  
z Designed for Linear Operations  
z International Standard Package  
z Molding Epoxies Meet UL94 V-0  
Flammability Classification  
z Guaranteed FBSOA at 60ºC  
z miniBLOC with Aluminum Nitride  
Isolation  
VISOL  
50/60 Hz, RMS, t = 1minute  
2500  
3000  
V~  
V~  
IISOL ≤ 1mA,  
t = 1s  
Md  
Mounting Torque for Base Plate  
Terminal Connection Torque  
1.5/13  
1.3/11.5  
Nm/lb.in.  
Nm/lb.in.  
Weight  
30  
g
z Low RDS(on) HDMOSTM Process  
z Rugged Polysilicon Gate Cell  
Structure  
z Low Package Inductance  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
(TJ = 25°C, Unless Otherwise Specified)  
z Programmable Loads  
z Current Regulators  
z DC-DC Convertors  
z Battery Chargers  
z DC Choppers  
z Temperature and Lighting Controls  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 250µA  
VGS = ±30V, VDS = 0V  
VDS = VDSS, VGS= 0V  
1500  
5.0  
V
8.0  
V
±200 nA  
IDSS  
25 µA  
TJ = 125°C  
500 µA  
RDS(on)  
VGS = 20V, ID = 4A, Note 1  
3.6  
Ω
Advantages  
z
Easy to Mount  
Space Savings  
High Power Density  
z
z
DS99815B(3/13)  
© 2013 IXYS CORPORATION, All rights reserved  
IXTN8N150L  
Symbol  
Test Conditions  
Characteristic Values  
SOT-227B (IXTN) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS= 50V, ID = 4A, Note 1  
1.4  
2.3  
3.2 S  
Ciss  
Coss  
Crss  
8000  
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
405  
70  
td(on)  
tr  
td(off)  
tf  
36  
18  
90  
95  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 15V, VDS = 0.5 • VDSS, ID = 4A  
RG = 2Ω (External)  
(M4 screws (4x) supplied)  
Qg(on)  
Qgs  
250  
80  
nC  
nC  
nC  
VGS= 15V, VDS = 0.5 • VDSS, ID = 4A  
Qgd  
116  
RthJC  
RthCS  
0.23 °C/W  
°C/W  
0.05  
Safe Operating Area Specification  
Symbol  
SOA  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
VDS = 1500V, ID = 0.17A, TC = 60°C, TP = 3s 255  
W
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
8
A
A
ISM  
VSD  
trr  
Repetitive, Pulse Width Limited by TJM  
32  
IF = 8A, VGS = 0V, Note 1  
1.2  
V
IF = IS, -di/dt = 100A/µs, VR = 100V  
1700  
ns  
Notes: 1. Pulse Test, t ≤ 300µs; Duty Cycle, d ≤ 2%.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463 6,771,478 B2 7,071,537  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
IXTN8N150L  
Fig. 1. Extended Output Characteristics @ TJ = 25ºC  
Fig. 2. Output Characteristics @ TJ = 125ºC  
8
7
6
5
4
3
2
1
0
VGS = 20V  
10  
8
VGS = 20V  
14V  
12V  
12V  
10V  
6
4
2
9V  
8V  
10V  
9V  
0
0
0
6
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
11  
14  
0
4
8
12  
16  
20  
24  
28  
32  
VDS - Volts  
VDS - Volts  
Fig. 3. RDS(on) Normalized to ID = 4A Value vs.  
Junction Temperature  
Fig. 4. RDS(on) Normalized to ID = 4A Value vs.  
Drain Current  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
VGS = 20V  
TJ = 125ºC  
I D = 8A  
VGS = 20V  
I D = 4A  
TJ = 25ºC  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
1
2
3
4
5
6
7
8
9
10  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 5. Maximum Drain Current vs.  
Case Temperature  
Fig. 6. Input Admittance  
9
8
7
6
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
TJ = 125ºC  
25ºC  
- 40ºC  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
7
8
9
10  
11  
12  
13  
TC - Degrees Centigrade  
VGS - Volts  
© 2013 IXYS CORPORATION, All rights reserved  
IXTN8N150L  
Fig. 8. Forward Voltage Drop of Intrinsic Diode  
Fig. 7. Transconductance  
28  
24  
20  
16  
12  
8
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
T
= - 40ºC  
J
25ºC  
125ºC  
TJ = 125ºC  
TJ = 25ºC  
4
0
0
1
2
3
4
5
6
7
8
9
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
ID - Amperes  
VSD - Volts  
Fig. 9. Gate Charge  
Fig. 10. Capacitance  
20  
15  
10  
5
100,000  
10,000  
1,000  
100  
= 1 MHz  
f
VDS = 750V  
I D = 4A  
C
iss  
I
G = 10mA  
C
oss  
rss  
C
0
10  
0
50  
100  
150  
200  
250  
300  
0
5
10  
15  
20  
25  
30  
35  
40  
VDS - Volts  
QG - NanoCoulombs  
Fig. 11. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: T_8N15L(8N)01-30-09  
IXTN8N150L  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 13. Forward-Bias Safe Operating Area  
@ T = 25ºC  
@ T = 60ºC  
C
C
100  
10  
1
100  
10  
1
RDS(on) Limit  
RDS(on) Limit  
25µs  
25µs  
100µs  
100µs  
1ms  
1ms  
10ms  
10ms  
TJ = 150ºC  
TJ = 150ºC  
C = 60ºC  
Single Pulse  
100ms  
TC = 25ºC  
T
100ms  
DC  
Single Pulse  
DC  
0.1  
0.1  
10  
100  
1,000  
10,000  
10  
100  
1,000  
10,000  
VDS - Volts  
VDS - Volts  
© 2013 IXYS CORPORATION, All rights reserved  
IXYS REF: T_8N15L(8N)3-06-13-A  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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