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IXTH140P10T

型号：

IXTH140P10T

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

172 K

下载PDF手册
TrenchPTM  
Power MOSFETs  
VDSS = -100V  
ID25 = -140A  
IXTT140P10T  
IXTH140P10T  
RDS(on)  
≤
10mΩ  
P-Channel Enhancement Mode  
Avalanche Rated  
TO-268 (IXTT)  
G
S
D (Tab)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TO-247 (IXTH)  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
-100  
-100  
V
V
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
±15  
±25  
V
V
G
D
S
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
-140  
A
A
D (Tab)  
- 400  
IA  
TC = 25°C  
TC = 25°C  
-140  
2.5  
A
J
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
EAS  
dv/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
10  
V/ns  
W
568  
Features  
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
°C  
°C  
°C  
z
International Standard Packages  
Avalanche Rated  
Extended FBSOA  
Fast Intrinsic Diode  
Low RDS(ON) and QG  
z
z
z
z
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
Md  
Mounting Torque (TO-247)  
1.13 / 10  
Nm/lb.in.  
Weight  
TO-268  
TO-247  
4
6
g
g
Advantages  
z
Easy to Mount  
Space Savings  
High Power Density  
z
z
Applications  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
z
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = - 250μA  
VDS = VGS, ID = - 250μA  
VGS = ±15V, VDS = 0V  
VDS = VDSS, VGS = 0V  
-100  
V
V
High-Side Switching  
Push Pull Amplifiers  
DC Choppers  
Automatic Test Equipment  
Current Regulators  
Battery Charger Applications  
z
- 2.0  
- 4.0  
z
z
±100 nA  
z
IDSS  
- 10 μA  
-150 μA  
z
TJ = 125°C  
RDS(on)  
VGS = -10V, ID = 0.5 • ID25, Note 1  
10 mΩ  
DS100371B(01/13)  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXTT140P10T  
IXTH140P10T  
Symbol  
Test Conditions  
Characteristic Values  
TO-268 Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = -10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = - 25V, f = 1MHz  
70  
115  
S
Ciss  
Coss  
Crss  
32.8  
2290  
700  
nF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
58  
26  
86  
26  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1Ω (External)  
Terminals: 1 - Gate  
3 - Source  
2,4 - Drain  
Qg(on)  
Qgs  
400  
125  
100  
nC  
nC  
nC  
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
RthJC  
RthCS  
0.22 °C/W  
°C/W  
TO-247  
0.21  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
-140  
- 560  
-1.4  
IS  
VGS = 0V  
A
A
V
TO-247 Outline  
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = -100A, VGS = 0V, Note 1  
∅ P  
trr  
QRM  
IRM  
130  
650  
-10  
ns  
nC  
A
1
2
3
IF = - 70A, -di/dt = -100A/μs  
VR = -100V, VGS = 0V  
e
Terminals: 1 - Gate  
2 - Drain  
Note  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
3 - Source  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
∅P 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTT140P10T  
IXTH140P10T  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
-140  
-120  
-100  
-80  
-60  
-40  
-20  
0
-900  
-800  
-700  
-600  
-500  
-400  
-300  
-200  
-100  
0
VGS = -10V  
VGS = -10V  
- 8V  
- 8V  
- 9V  
- 7V  
- 7V  
- 6V  
- 6V  
- 5V  
- 5V  
0
-10  
-20  
-30  
-40  
-50  
0
-0.2  
-0.4  
-0.6  
-0.8  
-1  
-1.2  
-1.4  
-2.4  
-350  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = - 70A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
-140  
-120  
-100  
-80  
-60  
-40  
-20  
0
VGS = -10V  
- 8V  
VGS = -10V  
- 7V  
- 6V  
I D = - 140A  
I D = - 70A  
- 5V  
- 4V  
0
-0.4  
-0.8  
-1.2  
-1.6  
-2  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = - 70A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
-160  
-140  
-120  
-100  
-80  
-60  
-40  
-20  
0
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
VGS = -10V  
TJ = 125ºC  
TJ = 25ºC  
0
-50  
-100  
-150  
-200  
-250  
-300  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TC - Degrees Centigrade  
ID - Amperes  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXTT140P10T  
IXTH140P10T  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
-200  
-180  
-160  
-140  
-120  
-100  
-80  
200  
180  
160  
140  
120  
100  
80  
TJ = - 40ºC  
25ºC  
125ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
-60  
60  
-40  
40  
-20  
20  
0
0
-3.4  
-3.8  
-4.2  
-4.6  
-5  
-5.4  
-5.8  
-6.2  
0
-20  
-40  
-60  
-80  
-100  
-120  
-140  
-160  
-180  
-200  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
-350  
-300  
-250  
-200  
-150  
-100  
-50  
-10  
-9  
-8  
-7  
-6  
-5  
-4  
-3  
-2  
-1  
0
VDS = - 50V  
I D = - 70A  
I G = -1mA  
TJ = 125ºC  
TJ = 25ºC  
0
-0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 -1.1 -1.2 -1.3 -1.4 -1.5  
0
50  
100  
150  
200  
250  
300  
350  
400  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
1,000  
-
100,000  
RDS(on) Limit  
25µs  
C
C
iss  
100µs  
-
100  
10,000  
1,000  
100  
1ms  
oss  
-
10  
10ms  
TJ = 150ºC  
100ms  
DC  
C
rss  
TC = 25ºC  
Single Pulse  
= 1 MHz  
-5  
f
-
1
-
-
-
100  
1
10  
0
-10  
-15  
-20  
-25  
-30  
-35  
-40  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTT140P10T  
IXTH140P10T  
Fig. 13. Resistive Turn-on Rise Time vs.  
Junction Temperature  
Fig. 14. Resistive Turn-on Rise Time vs.  
Drain Current  
50  
40  
30  
20  
10  
50  
40  
30  
20  
10  
RG = 1Ω, VGS = -10V  
DS = - 50V  
RG = 1Ω, VGS = -10V  
DS = - 50V  
V
V
TJ = 125ºC  
I D = -140A  
I D = - 70A  
TJ = 25ºC  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
-50  
-60  
-70  
-80  
-90  
-100  
-110  
-120  
-130  
-140  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on Switching Times vs.  
Gate Resistance  
Fig. 16. Resistive Turn-off Switching Times vs.  
Junction Temperature  
200  
180  
160  
140  
120  
100  
80  
320  
40  
140  
t r  
t
d(on) - - - -  
TJ = 125ºC, VGS = -10V  
DS = - 50V  
tf  
t
d(off) - - - -  
RG = 1Ω, VGS = -10V  
DS = - 50V  
280  
240  
200  
160  
120  
80  
35  
30  
25  
20  
15  
120  
100  
80  
V
V
I D = - 70A  
I D = - 140A  
I D = - 70A  
I D = -140A  
I D = - 70A  
60  
60  
40  
40  
0
40  
1
2
3
4
5
6
7
8
9
10  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 18. Resistive Turn-off Switching Times vs.  
Gate Resistance  
Fig. 17. Resistive Turn-off Switching Times vs.  
Drain Current  
180  
160  
140  
120  
100  
80  
360  
320  
280  
240  
200  
160  
120  
80  
32  
30  
28  
26  
24  
22  
140  
120  
100  
80  
tf  
t
d(off) - - - -  
RG = 1Ω, VGS = -10V  
DS = - 50V  
t f  
t
d(off) - - - -  
TJ = 125ºC, VGS = -10V  
DS = - 50V  
V
V
I D = - 70A  
TJ = 125ºC  
TJ = 25ºC  
I D = -140A  
60  
40  
60  
20  
40  
0
0
40  
1
2
3
4
5
6
7
8
9
10  
-50  
-60  
-70  
-80  
-90  
-100  
-110  
-120  
-130  
-140  
ID - Amperes  
RG - Ohms  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXTT140P10T  
IXTH140P10T  
Fig. 19. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: T_140P10T(A8-P10) 01-29-13  
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