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2SK4076-ZK-E1-AY

型号：

2SK4076-ZK-E1-AY

品牌：

NEC[ NEC ]

页数：

8 页

PDF大小：

112 K

下载PDF手册
DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK4076  
SWITCHING  
N-CHANNEL POWER MOS FET  
DESCRIPTION  
The 2SK4076 is N-channel MOS FET designed for high current switching applications.  
ORDERING INFORMATION  
PART NUMBER  
2SK4076-ZK-E1-AY  
2SK4076-ZK-E2-AY  
LEAD PLATING  
Pure Sn (Tin)  
PACKING  
PACKAGE  
Tape  
TO-252 (MP-3ZK)  
typ. 0.27 g  
2500 p/reel  
FEATURES  
(TO-252)  
• Low on-state resistance  
RDS(on)1 = 16 mΩ MAX. (VGS = 10 V, ID = 17.5 A)  
RDS(on)2 = 25 mΩ MAX. (VGS = 4.5 V, ID = 8 A)  
• Low Ciss: Ciss = 1200 pF TYP.  
• Logic level drive type  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC) (TC = 25°C)  
Drain Current (pulse) Note1  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
40  
±20  
±35  
±70  
26  
V
V
A
A
Total Power Dissipation (TC = 25°C)  
Total Power Dissipation (TA = 25°C)  
Channel Temperature  
W
W
°C  
PT2  
1.0  
150  
Tch  
Storage Temperature  
Tstg  
IAS  
–55 to +150  
°C  
A
Single Avalanche Current Note2  
Single Avalanche Energy Note2  
17  
29  
EAS  
mJ  
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%  
2. Starting Tch = 25°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH  
THERMAL RESISTANCE  
Channel to Case Thermal Resistance  
Channel to Ambient Thermal Resistance  
Rth(ch-C)  
4.8  
°C/W  
°C/W  
Rth(ch-A)  
125  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. D18224EJ1V0DS00 (1st edition)  
Date Published July 2006 NS CP(K)  
Printed in Japan  
2006  
2SK4076  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
CHARACTERISTICS  
Zero Gate Voltage Drain Current  
Gate Leakage Current  
SYMBOL  
IDSS  
TEST CONDITIONS  
VDS = 40 V, VGS = 0 V  
MIN. TYP. MAX. UNIT  
1
μA  
nA  
V
IGSS  
VGS = ±20 V, VDS = 0 V  
VDS = 10 V, ID = 1 mA  
VDS = 10 V, ID = 6 A  
VGS = 10 V, ID = 17.5 A  
VGS = 4.5 V, ID = 8 A  
VDS = 10 V  
±100  
2.5  
Gate Cut-off Voltage  
VGS(off)  
| yfs |  
RDS(on)1  
RDS(on)2  
Ciss  
1.5  
4.1  
2.0  
8.2  
12  
18  
1200  
192  
119  
13  
6
Forward Transfer Admittance Note  
Drain to Source On-state Resistance Note  
S
16  
25  
mΩ  
mΩ  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
V
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-on Delay Time  
Rise Time  
Coss  
Crss  
VGS = 0 V  
f = 1 MHz  
td(on)  
tr  
VDD = 20 V  
ID = 17.5 A  
Turn-off Delay Time  
Fall Time  
td(off)  
tf  
VGS = 10 V  
32  
6
RG = 0 Ω  
Total Gate Charge  
QG  
VDD = 32 V  
24  
5
Gate to Source Charge  
Gate to Drain Charge  
Body Diode Forward Voltage Note  
Reverse Recovery Time  
Reverse Recovery Charge  
Note Pulsed  
QGS  
QGD  
VF(S-D)  
trr  
VGS = 10 V  
ID = 35 A  
8
IF = 35 A, VGS = 0 V  
IF = 35 A, VGS = 0 V  
di/dt = 100 A/μs  
1.0  
27  
23  
1.5  
ns  
nC  
Qrr  
TEST CIRCUIT 1 AVALANCHE CAPABILITY  
TEST CIRCUIT 2 SWITCHING TIME  
D.U.T.  
L
D.U.T.  
V
V
GS  
0
RG  
= 25 Ω  
50 Ω  
R
L
90%  
V
GS  
Wave Form  
VGS  
10%  
90%  
R
G
PG.  
VDD  
PG.  
GS = 20 → 0 V  
V
DD  
V
DS  
90%  
V
DS  
V
0
GS  
BVDSS  
10% 10%  
V
DS  
Wave Form  
0
IAS  
V
DS  
I
D
τ
td(on)  
tr  
td(off)  
t
f
V
DD  
ton  
t
off  
τ = 1  
μs  
Duty Cycle ≤ 1%  
Starting Tch  
TEST CIRCUIT 3 GATE CHARGE  
D.U.T.  
= 2 mA  
IG  
RL  
50 Ω  
PG.  
V
DD  
2
Data Sheet D18224EJ1V0DS  
2SK4076  
TYPICAL CHARACTERISTICS (TA = 25°C)  
DERATING FACTOR OF FORWARD BIAS  
SAFE OPERATING AREA  
TOTAL POWER DISSIPATION vs.  
CASE TEMPERATURE  
30  
25  
20  
15  
10  
5
100  
80  
60  
40  
20  
0
0
0
25  
50  
75 100 125 150 175  
0
25  
50  
75 100 125 150 175  
TC - Case Temperature - °C  
TC - Case Temperature - °C  
FORWARD BIAS SAFE OPERATING AREA  
100  
10  
1
I
D(DC)  
I
D(pulse)  
PW = 100 μs  
DC  
R
DS(on) Limited  
(VGS = 10 V)  
Power Dissipation  
Limited  
10 ms  
1 ms  
TC  
= 25°C  
Single Pulse  
0.1  
0.1  
1
10  
100  
VDS - Drain to Source Voltage - V  
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH  
1000  
100  
10  
R
th(ch-A) = 125°C/W  
R
th(ch-C) = 4.8°C/W  
1
Single Pulse  
100 1000  
0.1  
100 μ  
1 m  
10 m  
100 m  
1
10  
PW - Pulse Width - s  
3
Data Sheet D18224EJ1V0DS  
2SK4076  
DRAIN CURRENT vs.  
FORWARD TRANSFER CHARACTERISTICS  
DRAIN TO SOURCE VOLTAGE  
100  
80  
60  
40  
20  
0
100  
10  
V
GS = 10 V  
4.5 V  
TA  
= −55°C  
25°C  
75°C  
150°C  
1
0.1  
0.01  
V
DS = 10 V  
Pulsed  
2.5  
Pulsed  
0
0.5  
1
1.5  
2
3
1
2
3
4
5
VDS - Drain to Source Voltage - V  
VGS - Gate to Source Voltage - V  
GATE CUT-OFF VOLTAGE vs.  
CHANNEL TEMPERATURE  
FORWARD TRANSFER ADMITTANCE vs.  
DRAIN CURRENT  
3
2.5  
2
100  
TA  
= 150°C  
75°C  
25°C  
10  
−55°C  
1.5  
1
V
DS = 10 V  
= 1 mA  
0.5  
0
V
DS = 10 V  
I
D
Pulsed  
1
0.1  
1
10  
100  
-100  
0
100  
200  
ID - Drain Current - A  
Tch - Channel Temperature - °C  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
DRAIN CURRENT  
DRAIN TO SOURCE ON-STATERESISTANCE vs.  
GATE TO SOURCE VOLTAGE  
40  
40  
35  
30  
25  
20  
15  
10  
5
Pulsed  
35  
30  
25  
20  
15  
10  
5
I
D
= 7 A  
17.5 A  
35 A  
V
GS = 4.5 V  
10 V  
Pulsed  
0
0
0.1  
1
10  
100  
0
5
10  
15  
20  
ID - Drain Current - A  
VGS - Gate to Source Voltage - V  
4
Data Sheet D18224EJ1V0DS  
2SK4076  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
CHANNEL TEMPERATURE  
CAPACITANCE vs. DRAIN TO  
SOURCE VOLTAGE  
30  
10000  
1000  
100  
V
GS = 0 V  
f = 1 MHz  
25  
20  
15  
10  
5
I = 8 A, VGS = 4.5 V  
D
C
iss  
C
oss  
ID = 17.5 A, VGS = 10 V  
C
rss  
0
10  
-100  
-50  
0
50  
100  
150  
200  
0.1  
1
10  
100  
Tch - Channel Temperature - °C  
VDS - Drain to Source Voltage - V  
SWITCHING CHARACTERISTICS  
DYNAMIC INPUT/OUTPUT CHARACTERISTICS  
1000  
40  
12  
10  
8
V
V
R
DD = 20 V  
GS = 10 V  
= 0 Ω  
35  
30  
25  
20  
15  
10  
5
V
DD = 32 V  
20 V  
G
8 V  
100  
10  
1
t
d(off)  
6
V
GS  
t
d(on)  
4
t
r
tf  
I = 35 A  
Pulsed  
D
2
V
DS  
0
0
0.1  
1
10  
100  
0
5
10  
15  
20  
25  
ID - Drain Current - A  
QG - Gate Chage - nC  
SOURCE TO DRAIN DIODE FORWARD VOLTAGE  
REVERSE RECOVERY TIME vs.  
DRAIN CURRENT  
100  
10  
1
1000  
Puls ed  
100  
10  
1
VGS = 10 V  
0 V  
di/dt = 100 A/μs  
V
GS = 0 V  
0.1  
0
0.5  
1
1.5  
0.1  
1
10  
100  
VF(S-D) - Source to Drain Voltage - V  
ID - Drain Current - A  
5
Data Sheet D18224EJ1V0DS  
2SK4076  
PACKAGE DRAWING (Unit: mm)  
TO-252 (MP-3ZK)  
2.3 0.1  
6.5 0.2  
5.1 TYP.  
4.3 MIN.  
0.5 0.1  
No Plating  
4
1
2
3
No Plating  
0.76 0.12  
1.14 MAX.  
0 to 0.25  
0.5 0.1  
2.3 2.3  
1.0  
1. Gate  
2. Drain  
3. Source  
4. Fin (Drain)  
EQUIVALENT CIRCUIT  
Drain  
Body  
Diode  
Gate  
Source  
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.  
When this device actually used, an additional protection circuit is externally required if a voltage exceeding  
the rated voltage may be applied to this device.  
6
Data Sheet D18224EJ1V0DS  
2SK4076  
TAPE INFORMATION  
There are two types (-E1, -E2) of taping depending on the direction of the device.  
Draw-out side  
Reel side  
MARKING INFORMATION  
Abbreviation of part number  
K4076  
Pb-free plating marking  
Lot code  
RECOMMENDED SOLDERING CONDITIONS  
The 2SK4076 should be soldered and mounted under the following recommended conditions.  
For soldering methods and conditions other than those recommended below, please contact an NEC Electronics  
sales representative.  
For technical information, see the following website.  
Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)  
Recommended  
Soldering Method  
Infrared reflow  
Soldering Conditions  
Condition Symbol  
IR60-00-3  
Maximum temperature (Package's surface temperature): 260°C or below  
Time at maximum temperature: 10 seconds or less  
Time of temperature higher than 220°C: 60 seconds or less  
Preheating time at 160 to 180°C: 60 to 120 seconds  
Maximum number of reflow processes: 3 times  
Maximum chlorine content of rosin flux (percentage mass): 0.2% or less  
Maximum temperature (Pin temperature): 350°C or below  
Time (per side of the device): 3 seconds or less  
Partial heating  
P350  
Maximum chlorine content of rosin flux: 0.2% (wt.) or less  
Caution Do not use different soldering methods together (except for partial heating).  
7
Data Sheet D18224EJ1V0DS  
2SK4076  
•
The information in this document is current as of July, 2006. The information is subject to change  
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or  
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all  
products and/or types are available in every country. Please check with an NEC Electronics sales  
representative for availability and additional information.  
• No part of this document may be copied or reproduced in any form or by any means without the prior  
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may  
appear in this document.  
•
NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual  
property rights of third parties by or arising from the use of NEC Electronics products listed in this document  
or any other liability arising from the use of such products. No license, express, implied or otherwise, is  
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.  
Descriptions of circuits, software and other related information in this document are provided for illustrative  
purposes in semiconductor product operation and application examples. The incorporation of these  
circuits, software and information in the design of a customer's equipment shall be done under the full  
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by  
customers or third parties arising from the use of these circuits, software and information.  
•
• While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,  
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To  
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC  
Electronics products, customers must incorporate sufficient safety measures in their design, such as  
redundancy, fire-containment and anti-failure features.  
• NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and  
"Specific".  
The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-  
designated "quality assurance program" for a specific application. The recommended applications of an NEC  
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of  
each NEC Electronics product before using it in a particular application.  
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio  
and visual equipment, home electronic appliances, machine tools, personal electronic equipment  
and industrial robots.  
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support).  
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems and medical equipment for life support, etc.  
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC  
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications  
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to  
determine NEC Electronics' willingness to support a given application.  
(Note)  
(1)  
"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its  
majority-owned subsidiaries.  
(2)  
"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as  
defined above).  
M8E 02. 11-1  
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