请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

2SK4088LS-1E

型号：

2SK4088LS-1E

品牌：

ONSEMI[ ONSEMI ]

页数：

7 页

PDF大小：

256 K

下载PDF手册
Ordering number : ENA0556D  
2SK4088LS  
N-Channel Power MOSFET  
http://onsemi.com  
Ω
650V, 11A, 0.85 , TO-220F-3FS  
Features  
•
•
ON-resistance R (on)=0.65 (typ.)  
10V drive  
Input capacitance Ciss=1000pF (typ.)  
Ω
DS  
•
Specifications  
Absolute Maximum Ratings  
at Ta=25°C  
Parameter  
Drain to Source Voltage  
Gate to Source Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
650  
±30  
11  
DSS  
V
V
GSS  
*1  
I
Limited only by maximum temperature Tch=150 C  
A
°
Dc  
Drain Current (DC)  
I
*2  
Tc=25 C (Our ideal heat dissipation condition)*3  
7.5  
40  
A
°
Dpack  
Drain Current (Pulse)  
Allowable Power Dissipation  
I
PW 10 s, duty cycle 1%  
A
≤
μ
≤
DP  
2.0  
37  
W
W
P
D
Tc=25 C (Our ideal heat dissipation condition)*3  
°
Channel Temperature  
Tch  
150  
C
C
°
°
Storage Temperature  
Tstg  
--55 to +150  
Avalanche Energy (Single Pulse) *4  
Avalanche Current *5  
E
65  
11  
mJ  
A
AS  
I
AV  
Note : 1 Shows chip capability  
*
2 Package limited  
*
3 Our condition is radiation from backside.  
*
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.  
4 V =50V, L=1mH, I =11A (Fig.1)  
*
*
DD  
5 L 1mH, single pulse  
AV  
≤
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating  
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.  
Package Dimensions  
unit : mm (typ)  
Ordering & Package Information  
Device  
Package  
Shipping  
memo  
7528-001  
TO-220F-3FS,  
SC-67  
2SK4088LS-1E  
50pcs./tube  
Pb-Free  
4.7  
10.16  
3.18  
2SK4088LS-1E  
2.54  
Marking  
Electrical Connection  
2
K4088  
1
LOT No.  
2.76  
1.47 MAX  
0.8  
3
1
2
3
0.5  
1 : Gate  
2 : Drain  
3 : Source  
2.54  
2.54  
TO-220F-3FS  
Semiconductor Components Industries, LLC, 2013  
May, 2013  
51513 TKIM TC-00002921/O1007 TIIM TC-00000931/40407QB TIIM TC-00000631/ No. A0556-1/7  
22107QB TIIM TC-00000372  
2SK4088LS  
at Ta=25°C  
Electrical Characteristics  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
650  
max  
Drain to Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate to Source Leakage Current  
Cutoff Voltage  
V
I
=10mA, V =0V  
V
μA  
nA  
V
(BR)DSS  
D GS  
I
I
V
V
V
V
=520V, V =0V  
GS  
100  
DSS  
DS  
GS  
DS  
DS  
=±30V, V =0V  
DS  
±100  
5
GSS  
V
(off)  
GS  
=10V, I =1mA  
3
D
Forward Transfer Admittance  
Static Drain to Source On-State Resistance  
Input Capacitance  
| yfs |  
(on)  
=10V, I =5.5A  
3.3  
6.5  
S
D
R
I
=5.5A, V =10V  
D GS  
0.65  
1000  
172  
36  
0.85  
Ω
DS  
Ciss  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
V
Output Capacitance  
Coss  
Crss  
V
=30V, f=1MHz  
DS  
Reverse Transfer Capacitance  
Turn-ON Delay Time  
t
t
t
t
(on)  
24  
d
r
Rise Time  
58  
See specified Test Circuit.  
Turn-OFF Delay Time  
(off)  
117  
40  
d
f
Fall Time  
Total Gate Charge  
Qg  
37.6  
6.8  
Gate to Source Charge  
Gate to Drain “Miller” Charge  
Diode Forward Voltage  
Qgs  
Qgd  
V
=200V, V =10V, I =11A  
GS  
DS  
D
17.6  
0.9  
V
I =11A, V =0V  
GS  
1.2  
SD  
S
Fig.1 Unclamped Inductive Switching Test Circuit  
Fig.2 Switching Time Test Circuit  
V
V
=200V  
DD  
IN  
10V  
0V  
D
L
I
=5.5A  
D
V
R =35.7Ω  
≥50Ω  
IN  
L
RG  
G
V
OUT  
D
PW=10μs  
D.C.≤1%  
S
2SK4088LS  
10V  
0V  
G
V
50Ω  
DD  
S
2SK4088LS  
P.G  
50Ω  
No. A0556-2/7  
2SK4088LS  
I
D
-- V  
I
D
-- V  
DS  
GS  
30  
25  
20  
15  
10  
30  
25  
20  
15  
10  
V
=20V  
Tc=25°C  
DS  
Tc= --25°C  
25°C  
75°C  
6V  
=5V  
5
0
5
0
V
GS  
0
5
10  
15  
20  
25  
30  
IT11763  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
Drain to Source Voltage, V  
-- V  
Gate to Source Voltage, V -- V  
GS  
IT11764  
DS  
R
(on) -- V  
R
(on) -- Tc  
DS  
GS  
DS  
2.5  
2.0  
1.5  
1.0  
2.0  
1.5  
1.0  
I =5.5A  
D
Tc=75°C  
25°C  
0.5  
0
0.5  
0
--25°C  
3
5
7
9
11  
13  
15  
IT11765  
--50  
--25  
0
25  
50  
75  
100  
125  
150  
Gate to Source Voltage, V  
-- V  
Case Temperature, Tc -- °C  
IT11766  
GS  
| yfs | -- I  
I
S
-- V  
D
SD  
3
2
5
V
=10V  
V
=0V  
DS  
GS  
3
2
10  
7
10  
7
5
3
2
5
1.0  
7
5
3
2
3
2
0.1  
7
5
1.0  
7
3
2
5
3
0.1  
0.01  
0.2  
2
3
5
7
2
3
5
7
2
3
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
IT11768  
1.0  
1.0  
Drain Current, I -- A  
IT11767  
Diode Forward Voltage, V  
SD  
-- V  
D
SW Time -- I  
Ciss, Coss, Crss -- V  
D
DS  
1000  
10000  
f=1MHz  
V
=200V  
=10V  
7
5
DD  
7
V
GS  
5
3
2
3
2
Ciss  
1000  
7
5
100  
3
2
7
5
100  
7
5
3
2
t (on)  
d
3
2
10  
0.1  
10  
0
10  
20  
30  
40  
50  
IT11770  
2
3
5
7
2
3
5
7
2
3
5
1.0  
10  
Drain Current, I -- A  
IT11769  
Drain to Source Voltage, V  
DS  
-- V  
D
No. A0556-3/7  
2SK4088LS  
V
GS  
-- Qg  
A S O  
10  
9
100  
7
V
=200V  
DS  
=11A  
I
=40A(PW≤10μs)  
DP  
5
I
D
3
2
I
(*1)=11A  
8
Dc  
10  
7
5
7
I
(*2)=7.5A  
Dpack  
3
2
6
5
1.0  
7
5
4
3
2
Operation in this area  
is limited by R (on).  
3
DS  
0.1  
7
5
2
3
2
1
0
Tc=25°C  
*1. Shows chip capability  
*2. Our ideal heat dissipation condition  
Single pulse  
0.01  
1.0  
0
0
0
10  
20  
30  
40  
IT11771  
2
3
5
7
2
3
5
7
2
3
5 7  
10  
100  
1000  
IT16933  
Total Gate Charge, Qg -- nC  
Drain to Source Voltage, V  
DS  
-- V  
P
-- Ta  
P
-- Tc  
D
D
40  
2.5  
2.0  
1.5  
1.0  
37  
35  
30  
25  
20  
15  
10  
0.5  
0
5
0
20  
40  
60  
80  
100  
120  
140  
160  
0
20  
40  
60  
80  
100  
120  
140  
160  
Ambient Temperature, Ta -- °C  
IT11730  
IT11731  
Case Temperature, Tc -- °C  
E
-- Ta  
AS  
120  
100  
80  
60  
40  
20  
0
25  
50  
75  
100  
125  
150  
175  
IT10478  
Ambient Temperature, Ta -- °C  
No. A0556-4/7  
2SK4088LS  
Magazine Specification  
2SK4088LS-1E  
No. A0556-5/7  
2SK4088LS  
Outline Drawing  
2SK4088LS-1E  
Mass (g) Unit  
1.8  
mm  
* For reference  
No. A0556-6/7  
2SK4088LS  
Note on usage : Since the 2SK4088LS is a MOSFET product, please avoid using this device in the vicinity of  
highly charged objects.  
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number  
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at  
www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no  
warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the  
application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental  
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual  
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical  
experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use  
as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in  
which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for  
any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors  
harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or  
death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the  
part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PS No. A0556-7/7  
厂商 型号 描述 页数 下载

PANASONIC

 		2SK0065 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

 		2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス － 小信号FET － 接合形FET ] 3 页

ETC

 		2SK0065P 晶体管| JFET | N沟道| 12V V（ BR ） DSS | 40uA的我（ DSS ） | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

ETC

 		2SK0065Q 晶体管| JFET | N沟道| 12V V（ BR ） DSS | 150UA我（ DSS ） | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

PANASONIC

 		2SK0123 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

 		2SK0123(2SK123) 小信号器件 - 小信号场效应管 - 场效应管结\n[ Small-signal device - Small-signal FETs - Junction FETs ] 3 页

PANASONIC

 		2SK0198 对于低频放大[ For Low-Frequency Amplification ] 3 页

ETC

 		2SK0198(2SK198) 2SK0198 （ 2SK198 ） - N沟道结型场效应管\n[ 2SK0198 (2SK198) - N-Channel Junction FET ] 3 页

PANASONIC

 		2SK0198P [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

PANASONIC

 		2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.190884s