IXTH1N250
Symbol
Test Conditions
Characteristic Values
TO-247 (IXTH) Outline
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 50V, ID = 0.5A, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
1.0
1.8
mS
Ciss
Coss
Crss
1660
77
pF
pF
pF
∅ P
1
2
3
23
td(on)
tr
td(off)
tf
69
25
ns
ns
ns
ns
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 1A
RG = 5Ω (External)
132
39
e
Terminals: 1 - Gate
2 - Drain
3 - Source
Qg(on)
Qgs
41
8
nC
nC
nC
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
VGS = 10V, VDS = 600V, ID = 0.5A
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
Qgd
16
RthJC
RthCS
0.50 °C/W
°C/W
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
0.21
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
Source-Drain Diode
e
5.20
5.72 0.205 0.225
L
L1
19.81 20.32
4.50
.780 .800
.177
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
1.5
6
∅P 3.55
Q
3.65
.140 .144
5.89
6.40 0.232 0.252
IS
VGS = 0V
A
A
R
4.32
5.49 .170 .216
ISM
VSD
trr
Repetitive, Pulse Width Limited by TJM
IF = 1A, VGS = 0V, Note 1
IF = 1A, -di/dt = 100A/μs, VR = 200V
1.5
V
2.5
μs
Note
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
*Additional provisions for lead to lead voltage isolation are required at VDS > 1200V.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
