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IXTH16N50D2

型号：

IXTH16N50D2

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

157 K

下载PDF手册
Depletion Mode  
MOSFET  
VDSX = 500V  
ID(on) > 16A  
IXTH16N50D2  
IXTT16N50D2  
RDS(on) 300m  
D
N-Channel  
TO-247 (IXTH)  
G
S
G
Symbol  
VDSX  
Test Conditions  
Maximum Ratings  
D
D (Tab)  
S
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
500  
500  
V
V
VDGX  
VGSX  
VGSM  
Continuous  
Transient  
20  
30  
V
V
TO-268 (IXTT)  
PD  
TC = 25C  
695  
W
G
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
C  
C  
C  
S
D (Tab)  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
G = Gate  
D
= Drain  
S = Source  
Tab = Drain  
Md  
Mounting Torque (TO-247)  
1.13 / 10  
Nm/lb.in.  
Weight  
TO-247  
TO-268  
6
4
g
g
Features  
• Normally ON Mode  
•International Standard Packages  
• Molding Epoxies Meet UL94V-0  
Flammability Classification  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
• Easy to Mount  
• Space Savings  
• High Power Density  
BVDSX  
VGS(off)  
IGSX  
VGS = - 5V, ID = 250A  
VDS = 25V, ID = 4mA  
VGS = 20V, VDS = 0V  
VDS = VDSX, VGS = - 5V  
500  
V
V
- 2.0  
- 4.0  
Applications  
100 nA  
• Audio Amplifiers  
• Start-up Circuits  
• Protection Circuits  
• Ramp Generators  
• Current Regulators  
• Active Loads  
IDSX(off)  
10 A  
150 A  
TJ = 125C  
RDS(on)  
ID(on)  
VGS = 0V, ID = 8A, Note 1  
300 m  
VGS = 0V, VDS = 25V, Note 1  
16  
A
DS100261C(4/17)  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXTH16N50D2  
IXTT16N50D2  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 Outline  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 30V, ID = 8A, Note 1  
7
12  
S
Ciss  
Coss  
Crss  
5250  
515  
pF  
pF  
pF  
P  
VGS = -10V, VDS = 25V, f = 1MHz  
1
2
3
130  
td(on)  
tr  
td(off)  
tf  
50  
173  
203  
220  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = + 5V, VDS = 250V, ID = 8A  
e
RG = 3.3(External)  
Terminals: 1 - Gate  
2 - Drain  
3 - Source  
Qg(on)  
Qgs  
199  
18  
nC  
nC  
nC  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
VGS = + 5V, VDS = 250V, ID = 8A  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Qgd  
100  
RthJC  
RthCS  
0.18C/W  
C/W  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
TO-247  
0.21  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
Safe-Operating-Area Specification  
Characteristic Values  
Min. Typ. Max.  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
Symbol  
SOA  
Test Conditions  
.780 .800  
.177  
VDS = 500V, ID = 0.5A, TC = 75C, tp = 5s  
250  
W
P 3.55  
Q
3.65  
.140 .144  
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
Source-Drain Diode  
TO-268 Outline  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
VSD  
IF = 16A, VGS = -10V, Note 1  
0.8  
1.3  
V
trr  
IRM  
QRM  
695  
20  
7
ns  
A
μC  
IF = 8A, -di/dt = 100A/s  
VR = 100V, VGS = -10V  
Terminals: 1 - Gate  
3 - Source  
2 - Drain  
Tab - Drain  
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTH16N50D2  
IXTT16N50D2  
Fig. 1. Output Characteristics @ TJ = 25oC  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
16  
14  
12  
10  
8
80  
70  
60  
50  
40  
30  
20  
10  
0
V
= 5V  
V
= 5V  
3V  
GS  
GS  
2V  
1V  
2V  
1.5V  
- 0V  
1V  
- 0.5V  
-1.0V  
0.5V  
6
0V  
- 0.5V  
-1V  
- 2V  
4
-1.5V  
2
- 2.0V  
- 2.5V  
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
0
5
10  
15  
20  
25  
30  
35  
50  
0
VDS - Volts  
VDS - Volts  
Fig. 4. Drain Current @ TJ = 25oC  
Fig. 3. Output Characteristics @ TJ = 125oC  
32  
28  
24  
20  
16  
12  
8
16  
14  
12  
10  
8
V
= 5.0V  
GS  
V
= 0V  
1.0V  
0.5V  
0V  
GS  
- 0.5V  
- 0.4V  
- 0.8V  
-1.0V  
-1.5V  
6
- 1.2V  
- 1.6V  
4
- 2.0V  
2
4
- 2.5V  
- 3.0V  
- 2.0V  
- 2.4V  
0
0
0
1
2
3
4
5
6
7
0
10  
20  
30  
40  
VDS - Volts  
VDS - Volts  
Fig. 5. Drain Current @ TJ = 100oC  
Fig. 6. Dynamic Resistance vs. Gate Voltage  
32  
28  
24  
20  
16  
12  
8
1.E+10  
1.E+09  
1.E+08  
1.E+07  
1.E+06  
1.E+05  
1.E+04  
1.E+03  
1.E+02  
1.E+01  
1.E+00  
V
= 0V  
GS  
V
= 50V - 25V  
∆
DS  
- 0.4V  
- 0.8V  
T = 25oC  
J
T = 100oC  
J
- 1.2V  
- 1.6V  
4
- 2.0V  
- 2.4V  
0
0
10  
20  
30  
40  
50  
-5  
-4  
-3  
-2  
-1  
VGS - Volts  
VDS - Volts  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXTH16N50D2  
IXTT16N50D2  
Fig. 8. RDS(on) Normalized to ID = 8A Value  
vs. Drain Current  
Fig. 7. Normalized RDS(on) vs. Junction Temperature  
2.5  
2.0  
1.5  
1.0  
0.5  
4
3.5  
3
V
= 0V  
GS  
V
= 0V  
5V  
GS  
I
= 8A  
D
2.5  
2
T = 125oC  
J
1.5  
1
T = 25oC  
J
0.5  
0
-50  
-3.5  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
ID - Amperes  
TJ - Degrees Centigrade  
Fig. 9. Input Admittance  
Fig. 10. Transconductance  
50  
40  
30  
20  
10  
0
30  
25  
20  
15  
10  
5
V
= 30V  
DS  
V
= 30V  
T
J
= - 40oC, 25oC, 125oC  
DS  
T
J
= 125oC  
25oC  
- 40oC  
0
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
-3.0  
-2.5  
-2.0  
-1.5  
-1.0  
-0.5  
0.0  
0.5  
1.0  
ID - Amperes  
VGS - Volts  
Fig. 11. Breakdown and Threshold Voltages  
vs. Junction Temperature  
Fig. 12. Forward Voltage Drop of Intrinsic Diode  
30  
25  
20  
15  
10  
5
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
V
= -10V  
GS  
VGS(off) @ V = 25V  
DS  
BVDSX@ V = - 5V  
GS  
T
J
= 125oC  
T
= 25oC  
J
0
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
-25  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
VSD - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTH16N50D2  
IXTT16N50D2  
Fig. 13. Capacitance  
Fig. 14. Gate Charge  
100,000  
10,000  
1,000  
100  
5
4
= 1 MHz  
f
V
= 250V  
DS  
I
I
= 8A  
D
G
3
= 10mA  
C
iss  
2
1
0
C
oss  
-1  
-2  
-3  
-4  
-5  
C
rss  
10  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
0
5
10  
15  
20  
25  
30  
35  
40  
QG - NanoCoulombs  
VDS - Volts  
Fig. 16. Forward-Bias Safe Operating Area  
@ TC = 75oC  
Fig. 15. Forward-Bias Safe Operating Area  
@ TC = 25oC  
100  
10  
1
100  
10  
1
R
Limit  
R
Limit  
DS(on)  
DS(on)  
25μs  
25μs  
100μs  
100μs  
1ms  
1ms  
10ms  
10ms  
100ms  
DC  
100ms  
T = 150oC  
DC  
J
T = 150oC  
= 25oC  
J
T
C
= 75oC  
T
C
Single Pulse  
Single Pulse  
0.1  
0.1  
10  
100  
1,000  
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
Fig. 17. Maximum Transient Thermal Impedance  
hvjv  
0.300  
0.100  
0.010  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_16N50D2(8C)4-08-10  
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