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IXSR45N120B

型号:

IXSR45N120B

品牌:

IXYS[ IXYS CORPORATION ]

页数:

2 页

PDF大小:

51 K

ADVANCE TECHNICAL INFORMATION  
IXSR 45N120B  
High Voltage IGBT  
ISOPLUS 247TM  
(ElectricallyIsolatedBackside)  
V
= 1200 V  
= 70 A  
= 3.0 V  
CES  
I
C25  
V
CE(sat)  
Short Circuit SOA Capability  
Symbol  
TestConditions  
Maximum Ratings  
ISOPLUS247TM  
E 153432  
VCES  
VCGR  
T
T
= 25°C to 150°C  
1200  
1200  
V
V
J
J
= 25°C to 150°C; R = 1 MΩ  
GE  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
IC25  
IC90  
ICM  
T
= 25°C  
70  
45  
A
A
A
C
E
Isolated backside*  
T
= 90°C  
C
T
= 25°C, 1 ms  
180  
C
G = Gate  
E = Emitter  
C = Collector  
SSOA  
(RBSOA)  
V = 15 V, T = 125°C, R = 5 Ω  
I = 90  
CM  
A
µs  
W
GE  
VJ  
G
@ 0.8 V  
CES  
tSC  
(SCSOA)  
V = 15 V, V = 720 V, T = 125°C  
10  
GE  
CE  
J
R = 5 Ω, non repetitive  
* Patent pending  
G
PC  
TC = 25°C  
250  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
Features  
-55 ... +150  
l
DCB Isolated mounting backside  
Meets TO-247AD package outline  
High current handling capability  
MOS Gate turn-on  
VISOL  
50/60 Hz, RMS t = 1 min leads-to housing  
2500  
300  
V~  
l
l
l
Maximumleadtemperatureforsoldering  
1.6 mm (0.062 in.) from case for 10 s  
°C  
- drive simplicity  
Weight  
5
g
Applications  
l
Symbol  
TestConditions  
Characteristic Values  
(T = 25°C, unless otherwise specified)  
Uninterruptible power supplies (UPS)  
Switched-mode and resonant-mode  
power supplies  
l
J
min. typ. max.  
l
AC motor speed control  
Welding  
BVCES  
VGE(th)  
I
= 1 mA, V = 0 V  
1200  
3
V
V
l
C
GE  
I
= 250 µA, V = V  
6
C
CE  
GE  
Advantages  
ICES  
V
V
= 0.8 V , V = 0 V  
50 µA  
2.  
CE  
CE  
CES  
GE  
l
T = 125°C  
5 mA  
Easy assembly  
J
l
High power density  
IGES  
= 0 V, V = ±20 V  
±100 nA  
3.0  
GE  
VCE(sat)  
I
= I ; V = 15 V  
2.5  
2.  
V
C
C 90  
GE  
T = 125°C  
6
V
J
© 2001 IXYS All rights reserved  
98842 (6/01)  
IXSR 45N120B  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(T = 25°C, unless otherwise specified)  
ISOPLUS247OUTLINE  
J
min. typ. max.  
I = I ; V = 10 V  
Note 1  
16  
23  
S
C
C 90  
CE  
Ciss  
Coss  
Crss  
3300  
240  
65  
pF  
pF  
pF  
V
= 0 V, V = 25 V, f = 1 MHz  
GS  
DS  
Qg  
120  
40  
nC  
nC  
nC  
Qge  
Qgc  
I = IC 90, V = 15 V, V = 0.5 V  
C GE CE CES  
45  
Inductive load, TJ = 25°C  
td(on)  
tri  
td(off)  
tfi  
36  
27  
ns  
ns  
I = IC 90, V = 15 V  
= 0.8 V , R = 5 Ω  
1 Gate, 2 Drain (Collector)  
3 Source (Emitter)  
4 no connection  
C
GE  
V
CE  
CES  
G
360  
380  
13  
500 ns  
750 ns  
22 mJ  
Note 2  
Dim.  
Millimeter  
Inches  
Eoff  
Min.  
Max. Min. Max.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
td(on)  
tri  
38  
29  
ns  
ns  
mJ  
ns  
Inductive load, TJ = 125°C  
I = IC 90, V = 15 V  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
C
GE  
Eon  
td(off)  
tfi  
2.9  
V
= 0.8 V , R = 5 Ω  
CE  
CES  
G
440  
700  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
Note 2  
ns  
e
L
L1  
5.45 BSC  
19.81 20.32  
.215 BSC  
.780 .800  
.150 .170  
Eoff  
22  
mJ  
3.81  
4.32  
RthJC  
RthCK  
0.5 K/W  
K/W  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 .244  
.170 .190  
0.15  
Notes: 1.Pulse test, t300 µs, duty cycle 2 %  
2.Switching times may increase (fCorlamVp) > 0.8 V , higher T or  
increasedR .  
CE  
CES  
J
G
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106  
4,850,072 4,931,844  
5,017,508  
5,034,796  
5,049,961 5,187,117 5,486,715  
5,063,307 5,237,481 5,381,025  
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