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2SK2727-E

型号：

2SK2727-E

品牌：

RENESAS[ RENESAS TECHNOLOGY CORP ]

页数：

10 页

PDF大小：

210 K

下载PDF手册
To our customers,  
Old Company Name in Catalogs and Other Documents  
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology  
Corporation, and Renesas Electronics Corporation took over all the business of both  
companies. Therefore, although the old company name remains in this document, it is a valid  
Renesas Electronics document. We appreciate your understanding.  
Renesas Electronics website: http://www.renesas.com  
April 1st, 2010  
Renesas Electronics Corporation  
Issued by: Renesas Electronics Corporation (http://www.renesas.com)  
Send any inquiries to http://www.renesas.com/inquiry.  
Notice  
1.  
2.  
All information included in this document is current as of the date this document is issued. Such information, however, is  
subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please  
confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to  
additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website.  
Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights  
of third parties by or arising from the use of Renesas Electronics products or technical information described in this document.  
No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights  
of Renesas Electronics or others.  
3.  
4.  
You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part.  
Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of  
semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software,  
and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by  
you or third parties arising from the use of these circuits, software, or information.  
5.  
When exporting the products or technology described in this document, you should comply with the applicable export control  
laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas  
Electronics products or the technology described in this document for any purpose relating to military applications or use by  
the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and  
technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited  
under any applicable domestic or foreign laws or regulations.  
6.  
7.  
Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics  
does not warrant that such information is error free. Renesas Electronics assumes no liability whatsoever for any damages  
incurred by you resulting from errors in or omissions from the information included herein.  
Renesas Electronics products are classified according to the following three quality grades: “Standard”, “High Quality”, and  
“Specific”. The recommended applications for each Renesas Electronics product depends on the product’s quality grade, as  
indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular  
application. You may not use any Renesas Electronics product for any application categorized as “Specific” without the prior  
written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for  
which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way  
liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an  
application categorized as “Specific” or for which the product is not intended where you have failed to obtain the prior written  
consent of Renesas Electronics. The quality grade of each Renesas Electronics product is “Standard” unless otherwise  
expressly specified in a Renesas Electronics data sheets or data books, etc.  
“Standard”:  
Computers; office equipment; communications equipment; test and measurement equipment; audio and visual  
equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots.  
“High Quality”: Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-  
crime systems; safety equipment; and medical equipment not specifically designed for life support.  
“Specific”:  
Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or  
systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare  
intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life.  
8.  
9.  
You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics,  
especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation  
characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or  
damages arising out of the use of Renesas Electronics products beyond such specified ranges.  
Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have  
specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further,  
Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to  
guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a  
Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire  
control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because  
the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system  
manufactured by you.  
10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental  
compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable  
laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS  
Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with  
applicable laws and regulations.  
11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas  
Electronics.  
12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this  
document or Renesas Electronics products, or if you have any other inquiries.  
(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-  
owned subsidiaries.  
(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.  
2SK2727  
Silicon N Channel MOS FET  
High Speed Power Switching  
REJ03G1025-0300  
(Previous: ADE-208-526A)  
Rev.3.00  
Sep 07, 2005  
Features  
•
•
•
•
Low on-resistance  
High speed switching  
Low drive current  
Avalanche ratings  
Outline  
RENESAS Package code: PRSS0004ZE-A  
(Package name: TO-3P)  
1. Gate  
2. Drain  
(Flange)  
3. Source  
1
2
S
Rev.3.00 Sep 07, 2005 page 1 of 7  
2SK2727  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Drain to source voltage  
Gate to source voltage  
Drain current  
Symbol  
VDSS  
Ratings  
Unit  
500  
±30  
V
V
VGSS  
ID  
10  
A
1
Drain peak current  
ID(pulse)  
*
40  
A
Body to drain diode reverse drain current  
Avalanche current  
IDR  
10  
A
3
IAP  
*
10  
A
3
Avalanche energy  
EAR  
*
5.55  
100  
mJ  
W
°C  
°C  
Channel dissipation  
Pch*2  
Channel temperature  
Tch  
150  
Storage temperature  
Tstg  
–55 to +150  
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %  
2. Value at Tc = 25°C  
3. Value at Tch = 25°C, Rg ≥ 50 Ω  
Electrical Characteristics  
(Ta = 25°C)  
Item  
Symbol  
Min  
500  
±30  
—
Typ  
Test Conditions  
10 mA, VGS = 0  
Drain to source breakdown voltage  
Gate to source breakdown voltage  
Gate to source leak current  
Zero gate voltage drain current  
Gate to source cutoff voltage  
V(BR)DSS  
V(BR)GSS  
IGSS  
IG = ±100 µA, VDS = 0  
VGS = ±25 V, VDS = 0  
VDS = 500 V, VGS = 0  
ID = 1m A, VDS = 10 V*4  
ID = 5 A, VGS = 10 V*4  
µA  
V
IDSS  
VGS(off)  
RDS(on
Static drain to source on state  
resistance  
Ω
Forward transfer admittance  
Input capacitance  
—
—
—
—
—
—
—
0  
65  
—
—
—
—
—
—
—
—
—
—
—
—
—
S
ID = 5 A, VDS = 10 V*4  
pF  
pF  
pF  
nc  
nc  
nc  
ns  
ns  
ns  
ns  
V
VDS = 10 V, VGS = 0,  
f = 1 MHz  
Output capacitance  
Reverse transfer capacitance  
Total gate charge  
21  
VDD = 400 V, VGS = 10 V,  
ID = 10 A  
Gate to source charge  
Gate to drain charge  
Turn-on delay time  
Rise time  
5
8
20  
VGS = 10 V, ID = 5 A,  
RL = 6 Ω  
70  
Turn-off delay time  
Fall time  
td(off)  
tf  
55  
50  
Body to drain diode forward voltage  
VDF  
trr  
1.0  
300  
ID = 10A, VGS = 0  
Body to drain diode reverse recovery  
time  
ns  
IF = 10A, VGS = 0  
diF/ dt = 100 A/µs  
Note: 4. Pulse test  
Rev.3.00 Sep 07, 2005 page 2 of 7  
2SK2727  
Main Characteristics  
Power vs. Temperature Derating  
Maximum Safe Operation Area  
200  
150  
100  
50  
100  
30  
10  
100  
µ
s
1 ms  
DC Operation (Tc = 25  
3
1
Operation in  
this area is  
limited by R  
DS(on)  
°
0.3  
C)  
0.1  
0.03  
0.01  
Ta = 25°C  
0
30  
300  
1000  
50  
100  
150  
200  
1
3
10  
100  
Case Temperature TC (°C)  
Draurce Voltage VDS (V)  
Typical Output Characteristics  
racteristics  
10  
8
10 V  
6 V  
Pulse Test  
5 V  
6
Tc = 75°C  
4
–25°C  
25°C  
2
2
0
0
2
4
6
8
GS  
10  
10  
Drain t
Gate to Source Voltage VGS (V)  
Drain tage  
vs. Gge  
Static Drain to Source on State  
Resistance vs. Drain Current  
5
2
20  
16  
12  
8
Pulse Test  
Pulse Test  
1
VGS = 10, 15 V  
0.5  
ID = 7 A  
5 A  
4
0.2  
0.1  
2 A  
12  
Gate to Source Voltage VGS (V)  
0
4
8
16  
20  
0.1 0.2  
0.5  
1
2
5
10 20  
Drain Current ID (A)  
Rev.3.00 Sep 07, 2005 page 3 of 7  
2SK2727  
Static Drain to Source on State  
Resistance vs. Temperature  
Forward Transfer Admittance  
vs. Drain Current  
20  
10  
5
5
4
3
2
1
Pulse Test  
Tc = –25°C  
25°C  
2
ID = 7 A  
5 A  
75°C  
1
VGS = 10 V  
0.5  
2 A  
VDS = 10 V  
Pulse Test  
0
0.2  
0.1 0.2  
0.5  
1
2
5
10 20  
–40  
0
40  
80  
120  
160  
Case Temperature TC (°C)  
Drain Current ID (A)  
Body to Drain Diode Reverse  
Recovery Time  
Capacitance vs.  
urce Voltage  
1000  
500  
Ciss  
200  
100  
50  
Coss  
10  
5
20  
10  
di / dt =
VGS
Crss  
40  
VGS = 0  
f = 1 MHz  
2
0.1 0.3  
1
0
10  
20  
30  
50  
Revers
Drain to Source Voltage VDS (V)  
Ds  
Switching Characteristics  
500  
400  
300  
200  
100  
20  
16  
12  
8
1000  
VDS  
300  
100  
VDD =
25V  
400 V  
t
d(off)  
t
f
VGS  
30  
10  
t
t
r
d(on)  
I
= 10 A  
D
4
0
VDD = 400 V  
250 V  
100 V  
3
1
VGS = 10 V, VDD = 30 V  
PW = 10 µs, duty < 1 %  
0
0.1 0.3  
1
3
10 30  
100  
8
16  
24  
32  
40  
Gate Charge Qg (nc)  
Drain Current ID (A)  
Rev.3.00 Sep 07, 2005 page 4 of 7  
2SK2727  
Maximum Avalanche Energy vs.  
Channel Temperature Derating  
Reverse Drain Current vs.  
Source to Drain Voltage  
10  
8
10  
8
IAP = 10 A  
VDD = 50 V  
duty < 1 %  
Rg > 50 Ω  
5, 10 V  
6
6
VGS = 0, –5 V  
4
4
2
0
2
Pulse Test  
1.6  
0
0.4  
0.8  
1.2  
2.0  
25  
50  
75  
100  
125  
150  
Channel Temperature Tch (°C)  
Source to Drain Voltage  
V
SD (V)  
Normalized Transient Thermal Impedance h  
3
1
C  
D = 1  
0.5  
0.3  
0.1  
γ
θ
(t) = s (t) • ch – c  
– c = 1.25°C/W, Tc = 25°C  
PW  
T
P
DM  
D =  
0.03  
0.01  
0.01  
PW  
T
10 m  
100 m  
1
10  
Pulse Width PW (S)  
Ava
Avalanche Waveform  
VDSS  
VDSS – VDD  
1
2
2
• L • IAP •  
EAR  
=
L
VDS  
Monitor  
V(BR)DSS  
IAP  
Monitor  
IAP  
VDS  
Rg  
VDD  
D. U. T  
ID  
Vin  
50 Ω  
15 V  
VDD  
0
Rev.3.00 Sep 07, 2005 page 5 of 7  
2SK2727  
Switching Time Test Circuit  
Vin Monitor  
Switching Time Waveforms  
90%  
Vout  
Monitor  
D.U.T.  
RL  
10%  
10%  
Vin  
Vout  
10%  
VDD  
= 30 V  
Vin  
10 V  
50 Ω  
90%  
90%  
t
t
d(off)  
d(on)  
t
f
t
r
Rev.3.00 Sep 07, 2005 page 6 of 7  
2SK2727  
Package Dimensions  
JEITA Package Code  
SC-65  
RENESAS Code  
Package Name  
TO-3P / TO-3PV  
MASS[Typ.]  
5.0g  
PRSS0004ZE-A  
Unit: mm  
4.8 0.2  
15.6 0.3  
3.2 0.2  
φ
1.5  
1.6  
2.0  
1.4 Max  
2.8  
1.0 0.2  
0.
0.9  
1.0  
3.6  
5.45 0.5  
5.45
Ordering Information  
Part Name  
Shipping Container  
2SK2727-E  
360 pc
ube)  
Note: For some grades, prode contact the Renesas sales office to check the state of  
production before or
Rev.3.00 Sep 07, 2005 page 7 of 7  
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Keep safety first in your circuit designs!  
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble  
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.  
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary  
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.  
Notes regarding these materials  
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technouct best suited to the customer's  
application; they do not convey any license under any intellectual property rights, or any other rights, belochnology Corp. or a third party.  
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-parthe use of any product data,  
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.  
3. All information contained in these materials, including product data, diagrams, charts, programs and on on products at the time of  
publication of these materials, and are subject to change by Renesas Technology Corp. without nr other reasons. It is  
therefore recommended that customers contact Renesas Technology Corp. or an authorized Rutor for the latest product  
information before purchasing a product listed herein.  
The information described here may contain technical inaccuracies or typographical errors.  
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other l
Please also pay attention to information published by Renesas Technology Corp. by vagy Corp. Semiconductor  
home page (http://www.renesas.com).  
4. When using any or all of the information contained in these materials, including progorithms, please be sure to  
evaluate all information as a total system before making a final decision on the aenesas Technology Corp. assumes  
no responsibility for any damage, liability or other loss resulting from the inform
5. Renesas Technology Corp. semiconductors are not designed or manufacturnder circumstances in which human life  
is potentially at stake. Please contact Renesas Technology Corp. or an auistributor when considering the use of a  
product contained herein for any specific purposes, such as apparatus ol, aerospace, nuclear, or undersea repeater  
use.  
6. The prior written approval of Renesas Technology Corp. is necessarese materials.  
7. If these products or technologies are subject to the Japanese expunder a license from the Japanese government and  
cannot be imported into a country other than the approved dest
Any diversion or reexport contrary to the export control laws adestination is prohibited.  
8. Please contact Renesas Technology Corp. for further detaied therein.  
RENESAS SALES OFFICES  
http://www.renesas.com  
Refer to "http://www.renesas.com/ormation.  
Renesas Technology America
450 Holger Way, San Jose, C
Tel: <1> (408) 382-7500, F
Renesas Technology
Dukes Meadow, Millboare, SL8 5FH, U.K.  
Tel: <44> (1628) 585-100
Renesas Technology Hong K
7th Floor, North Tower, World Finur City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong  
Tel: <852> 2265-6688, Fax: <852>
Renesas Technology Taiwan Co., Ltd
10th Floor, No.99, Fushing North Road, Tei, Taiwan  
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999  
Renesas Technology (Shanghai) Co., Ltd.  
Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China  
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952  
Renesas Technology Singapore Pte. Ltd.  
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632  
Tel: <65> 6213-0200, Fax: <65> 6278-8001  
Renesas Technology Korea Co., Ltd.  
Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea  
Tel: <82> 2-796-3115, Fax: <82> 2-796-2145  
Renesas Technology Malaysia Sdn. Bhd.  
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia  
Tel: <603> 7955-9390, Fax: <603> 7955-9510  
© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.  
Colophon .3.0  
厂商 型号 描述 页数 下载

PANASONIC

 		2SK0065 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

 		2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス － 小信号FET － 接合形FET ] 3 页

ETC

 		2SK0065P 晶体管| JFET | N沟道| 12V V（ BR ） DSS | 40uA的我（ DSS ） | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

ETC

 		2SK0065Q 晶体管| JFET | N沟道| 12V V（ BR ） DSS | 150UA我（ DSS ） | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

PANASONIC

 		2SK0123 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

 		2SK0123(2SK123) 小信号器件 - 小信号场效应管 - 场效应管结\n[ Small-signal device - Small-signal FETs - Junction FETs ] 3 页

PANASONIC

 		2SK0198 对于低频放大[ For Low-Frequency Amplification ] 3 页

ETC

 		2SK0198(2SK198) 2SK0198 （ 2SK198 ） - N沟道结型场效应管\n[ 2SK0198 (2SK198) - N-Channel Junction FET ] 3 页

PANASONIC

 		2SK0198P [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

PANASONIC

 		2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

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